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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SQJ968EP-T1-GE3 DISTI # V36:1790_14140430 | Vishay Intertechnologies | DUAL N-CHANNEL 60-V (D-S) 175C | 0 |
|
| SQJ968EP-T1_GE3 DISTI # SQJ968EP-T1_GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 18A 8-Pin SO T/R (Alt: SQJ968EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 12000 |
|
| SQJ968EP-T1_GE3 DISTI # SQJ968EP-T1_GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 18A 8-Pin SO T/R - Tape and Reel (Alt: SQJ968EP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SQJ968EP-T1_GE3 DISTI # 78-SQJ968EP-T1_GE3 | Vishay Intertechnologies | MOSFET Dual N-Channel 60V AEC-Q101 Qualified RoHS: Compliant | 4840 |
|
| SQJ968EP-T1_GE3 DISTI # TMOS1159 | Vishay Intertechnologies | Dual N-CH 60V 33,6mOhm SO-8L RoHS: Compliant | Stock DE - 0Stock HK - 0Stock US - 0 |
|
| SQJ968EPT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 18A I(D), 60V, 0.0336ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 15000 | |
| SQJ968EP-T1-GE3 DISTI # 2400405 | Vishay Intertechnologies | MOSFET, 2 N CH, 60V, 18A, POWERPAK SO-8 RoHS: Compliant | 363 |
|
| SQJ968EP-T1-GE3 DISTI # 2400405 | Vishay Intertechnologies | MOSFET, 2 N CH, 60V, 18A, POWERPAK SO-8 RoHS: Compliant | 0 |
|
| SQJ968EP-T1_GE3 DISTI # XSKDRABV0027385 | Vishay Intertechnologies | RoHS: Compliant | 9000 in Stock0 on Order |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SQJ968EP-T1_GE3 OMO.#: OMO-SQJ968EP-T1-GE3 |
MOSFET Dual N-Channel 60V AEC-Q101 Qualified |
|
Mfr.#: SQJ968EP OMO.#: OMO-SQJ968EP-1190 |
Neu und Original |
|
|
Mfr.#: SQJ968EP-T1-GE3 OMO.#: OMO-SQJ968EP-T1-GE3-1190 |
DUAL N-CHANNEL 60-V (D-S) 175C |
|
Mfr.#: SQJ968EP-T1_GE3 OMO.#: OMO-SQJ968EP-T1-GE3-VISHAY |
MOSFET 2 N-CH 60V POWERPAK SO8 |
|
|
Mfr.#: SQJ968EPT1GE3 OMO.#: OMO-SQJ968EPT1GE3-1190 |
Power Field-Effect Transistor, 18A I(D), 60V, 0.0336ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |