BSC120N03MSGATMA1

BSC120N03MSGATMA1
Mfr. #:
BSC120N03MSGATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC120N03MSGATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
39 A
Rds On - Drain-Source-Widerstand:
10 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
20 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
28 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Serie:
OptiMOS 3M
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
25 S
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
4.4 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
7 ns
Typische Einschaltverzögerungszeit:
7.9 ns
Teil # Aliase:
BSC120N03MS BSC12N3MSGXT G SP000311516
Gewichtseinheit:
0.021341 oz
Tags
BSC120N03MSG, BSC120N03M, BSC120N, BSC120, BSC12, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
BSC120N03MSGATMA1
DISTI # V72:2272_06391051
Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin TDSON EP T/R
RoHS: Compliant
4550
  • 3000:$0.1986
  • 1000:$0.2202
  • 500:$0.2541
  • 250:$0.2579
  • 100:$0.2607
  • 25:$0.3660
  • 10:$0.3709
  • 1:$0.4286
BSC120N03MSGATMA1
DISTI # BSC120N03MSGATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 30V 39A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
20016In Stock
  • 1000:$0.2754
  • 500:$0.3442
  • 100:$0.4647
  • 10:$0.6020
  • 1:$0.6900
BSC120N03MSGATMA1
DISTI # BSC120N03MSGATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 30V 39A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
20016In Stock
  • 1000:$0.2754
  • 500:$0.3442
  • 100:$0.4647
  • 10:$0.6020
  • 1:$0.6900
BSC120N03MSGATMA1
DISTI # BSC120N03MSGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 39A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
15000In Stock
  • 5000:$0.2256
BSC120N03MSGATMA1
DISTI # 30716873
Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin TDSON EP T/R
RoHS: Compliant
4550
  • 3000:$0.1986
  • 1000:$0.2202
  • 500:$0.2541
  • 250:$0.2579
  • 100:$0.2607
  • 38:$0.3660
BSC120N03MSGATMA1
DISTI # BSC120N03MSGATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC120N03MSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 5000
  • 5000:$0.2009
  • 10000:$0.2009
  • 20000:$0.1999
  • 30000:$0.1999
  • 50000:$0.1989
BSC120N03MSGATMA1
DISTI # 60R2514
Infineon Technologies AGMOSFET, N CHANNEL, 30V, 39A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:39A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes1000
  • 1:$0.6270
  • 10:$0.5180
  • 100:$0.3340
  • 500:$0.3010
  • 1000:$0.2680
BSC120N03MSGATMA1.
DISTI # 27AC1078
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:39A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:28W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.1990
  • 10000:$0.1920
  • 20000:$0.1880
  • 30000:$0.1840
  • 50000:$0.1810
BSC120N03MSGATMA1Infineon Technologies AGSingle N-Channel 30 V 12 mOhm 15 nC OptiMOS Power Mosfet - TDSON-8
RoHS: Not Compliant
5000Reel
  • 15000:$0.2185
  • 25000:$0.2090
  • 35000:$0.2052
  • 45000:$0.2014
  • 99999:$0.1976
BSC120N03MS G
DISTI # 726-BSC120N03MSG
Infineon Technologies AGMOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M
RoHS: Compliant
2063
  • 1:$0.5700
  • 10:$0.4710
  • 100:$0.3040
  • 1000:$0.2440
BSC120N03MSGATMA1
DISTI # 726-BSC120N03MSGATMA
Infineon Technologies AGMOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M
RoHS: Compliant
0
  • 1:$0.5700
  • 10:$0.4710
  • 100:$0.3040
  • 1000:$0.2440
BSC120N03MSGATMA1
DISTI # 7545308P
Infineon Technologies AGMOSFET N-CHANNEL 30V 11A OPTIMOS3 TDSON8, RL1365
  • 50:£0.2840
BSC120N03MSGATMA1
DISTI # 1775468
Infineon Technologies AGMOSFET, N CH, 39A, 30V, PG-TDSON-8
RoHS: Compliant
0
  • 1:$0.9020
  • 10:$0.7460
  • 100:$0.4810
  • 1000:$0.3870
  • 5000:$0.3270
BSC120N03MSGATMA1
DISTI # 1775468
Infineon Technologies AGMOSFET, N CH, 39A, 30V, PG-TDSON-8
RoHS: Compliant
0
  • 5:£0.4110
  • 25:£0.2900
  • 100:£0.2350
  • 250:£0.2190
  • 500:£0.2040
BSC120N03MSGATMA1
DISTI # C1S322000207161
Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin TDSON EP T/R
RoHS: Compliant
4550
  • 250:$0.2666
  • 100:$0.2673
  • 25:$0.3718
  • 10:$0.3735
Bild Teil # Beschreibung
TLV274CPWR

Mfr.#: TLV274CPWR

OMO.#: OMO-TLV274CPWR

Operational Amplifiers - Op Amps 3MHz R/R Op Amp
MMBT5550LT1G

Mfr.#: MMBT5550LT1G

OMO.#: OMO-MMBT5550LT1G

Bipolar Transistors - BJT SS HV XSTR NPN 160V
CSD16403Q5A

Mfr.#: CSD16403Q5A

OMO.#: OMO-CSD16403Q5A

MOSFET N-Ch NexFET Power MOSFETs
BSS138

Mfr.#: BSS138

OMO.#: OMO-BSS138

MOSFET SOT-23 N-CH LOGIC
NDS331N

Mfr.#: NDS331N

OMO.#: OMO-NDS331N

MOSFET N-Ch LL FET Enhancement Mode
NC7SZ08P5X

Mfr.#: NC7SZ08P5X

OMO.#: OMO-NC7SZ08P5X

Logic Gates UHS 2-Input AND Gate
SJ-43515TS

Mfr.#: SJ-43515TS

OMO.#: OMO-SJ-43515TS

Phone Connectors audio jack, 3.5 mm, rt, 4 conductor, through hole, 1 switch
0678L9300-02

Mfr.#: 0678L9300-02

OMO.#: OMO-0678L9300-02

Surface Mount Fuses 30A 250VAC 72 VCD
SJ-43515TS

Mfr.#: SJ-43515TS

OMO.#: OMO-SJ-43515TS-CUI

Phone Connectors audio jack, 3.5 mm, rt, 4 conductor, through hole, 1 switch
TLV274CPWR

Mfr.#: TLV274CPWR

OMO.#: OMO-TLV274CPWR-TEXAS-INSTRUMENTS

Operational Amplifiers - Op Amps 3MHz R/R Op Amp
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1991
Menge eingeben:
Der aktuelle Preis von BSC120N03MSGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,56 $
0,56 $
10
0,47 $
4,71 $
100
0,30 $
30,40 $
1000
0,24 $
244,00 $
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