 | | | |
| PartNumber | BSC120N03LS G | BSC120N03LSGATMA1 | BSC120N03MS G |
| Description | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3 | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3 | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 39 A | 39 A | 39 A |
| Rds On Drain Source Resistance | 10 mOhms | 10 mOhms | 10 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 15 nC | 15 nC | 20 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 28 W | 28 W | 28 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 3M |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 25 S | 25 S | 25 S |
| Fall Time | 2.2 ns | 2.2 ns | 5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2.2 ns | 2.2 ns | 4.4 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 12 ns | 12 ns | 7 ns |
| Typical Turn On Delay Time | 2.7 ns | 2.7 ns | 7.9 ns |
| Part # Aliases | BSC120N03LSGATMA1 BSC12N3LSGXT SP000302848 | BSC120N03LS BSC12N3LSGXT G SP000302848 | BSC120N03MSGATMA1 BSC12N3MSGXT SP000311516 |
| Unit Weight | - | 0.008536 oz | 0.003527 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC120N03LS G | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3 | |
| BSC120N03LSGATMA1 | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3 | ||
| BSC120N03MSGATMA1 | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M | ||
| BSC120N03MS G | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M | ||
| BSC120N03LSGATMA1 | MOSFET N-CH 30V 39A TDSON-8 | ||
| BSC120N03MSGATMA1 | MOSFET N-CH 30V 39A TDSON-8 | ||
| BSC120N03LS | Neu und Original | ||
| BSC120N03LS G | Trans MOSFET N-CH 30V 12A 8-Pin TDSON T/R (Alt: BSC120N03LS G) | ||
| BSC120N03LS G 120N03LS | Neu und Original | ||
| BSC120N03LSG | Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC120N03LSG , TDZ15J , | Neu und Original | ||
| BSC120N03LSGATMA1 , TDZ1 | Neu und Original | ||
| BSC120N03MS | Neu und Original | ||
| BSC120N03MS G | Trans MOSFET N-CH 30V 11A 8-Pin TDSON EP | ||
| BSC120N03MSG | Trans MOSFET N-CH 30V 11A 8-Pin TDSON EP (Alt: BSC120N03MS G) | ||
| BSC120N03MSG , TDZ3V6J , | Neu und Original | ||
| BSC120N03MSG,30V,39A, | Neu und Original | ||
| BSC120N03MSGATMA1 , TDZ5 | Neu und Original | ||
| BSC120N03S | Neu und Original | ||
| BSC120N03LSGATMA1-CUT TAPE | Neu und Original |