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BSC120N03LSGATMA1

BSC120N03LSGATMA1
Mfr. #:
BSC120N03LSGATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC120N03LSGATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
39 A
Rds On - Drain-Source-Widerstand:
10 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
15 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
28 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
25 S
Abfallzeit:
2.2 ns
Produktart:
MOSFET
Anstiegszeit:
2.2 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
12 ns
Typische Einschaltverzögerungszeit:
2.7 ns
Teil # Aliase:
BSC120N03LS BSC12N3LSGXT G SP000302848
Gewichtseinheit:
0.008536 oz
Tags
BSC120N03LSGA, BSC120N03LSG, BSC120N03L, BSC120N, BSC120, BSC12, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 30 V 12 mOhm OptiMOS™3 Power-Mosfet - PG-TDSON-8
***ment14 APAC
MOSFET, N CH, 39A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:28W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:39A; Power Dissipation Pd:28W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Teil # Mfg. Beschreibung Aktie Preis
BSC120N03LSGATMA1
DISTI # V72:2272_06391050		Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R
RoHS: Compliant		8784
  • 6000:$0.1550
  • 3000:$0.1711
  • 1000:$0.1901
  • 500:$0.2112
  • 250:$0.2347
  • 100:$0.2607
  • 25:$0.3664
  • 10:$0.3713
  • 1:$0.4296
BSC120N03LSGATMA1
DISTI # BSC120N03LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 39A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7929In Stock
  • 1000:$0.2754
  • 500:$0.3442
  • 100:$0.4647
  • 10:$0.6020
  • 1:$0.6900
BSC120N03LSGATMA1
DISTI # BSC120N03LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 39A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7929In Stock
  • 1000:$0.2754
  • 500:$0.3442
  • 100:$0.4647
  • 10:$0.6020
  • 1:$0.6900
BSC120N03LSGATMA1
DISTI # BSC120N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 39A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 5000:$0.2256
BSC120N03LSGATMA1
DISTI # 26195735		Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R
RoHS: Compliant		8784
  • 6000:$0.1587
  • 3000:$0.1711
  • 1000:$0.1901
  • 500:$0.2112
  • 250:$0.2347
  • 100:$0.2607
  • 38:$0.3664
BSC120N03LSGXT
DISTI # BSC120N03LSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TDSON EP - Tape and Reel (Alt: BSC120N03LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.1749
  • 10000:$0.1679
  • 20000:$0.1619
  • 30000:$0.1569
  • 50000:$0.1539
BSC120N03LSGATMA1
DISTI # 60R2513		Infineon Technologies AGMOSFET, N CHANNEL, 30V, 39A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:39A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes176
  • 1:$0.7040
  • 10:$0.5800
  • 100:$0.3530
  • 500:$0.3140
  • 1000:$0.2730
BSC120N03LSGATMA1
DISTI # 726-BSC120N03LSGATMA		Infineon Technologies AGMOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3
RoHS: Compliant		4139
  • 1:$0.5700
  • 10:$0.4710
  • 100:$0.3040
  • 1000:$0.2440
BSC120N03LS G
DISTI # 726-BSC120N03LSG		Infineon Technologies AGMOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3
RoHS: Compliant		5442
  • 1:$0.6400
  • 10:$0.5270
  • 100:$0.3210
  • 1000:$0.2480
BSC120N03LSGATMA1
DISTI # 7528173P		Infineon Technologies AGMOSFET N-CHANNEL 30V 12A OPTIMOS3 TDSON8, RL5450
  • 50:£0.3960
  • 250:£0.2420
  • 1250:£0.1860
  • 2500:£0.1760
BSC120N03LSGATMA1
DISTI # BSC120N03LSGATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,33A,28W,PG-TDSON-84536
  • 1:$0.5914
  • 3:$0.3570
  • 10:$0.2937
  • 100:$0.2571
  • 1000:$0.2320
BSC120N03LSGATMA1
DISTI # C1S322000598911		Infineon Technologies AGMOSFETs
RoHS: Compliant		8784
  • 250:$0.2347
  • 100:$0.2607
  • 25:$0.3664
  • 10:$0.3713
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von BSC120N03LSGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,56 $
0,56 $
10
0,47 $
4,71 $
100
0,30 $
30,40 $
1000
0,24 $
244,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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