BSC120N03LSG

BSC120N03LSGATMA1 vs BSC120N03LSG vs BSC120N03LSG , TDZ15J ,

 
PartNumberBSC120N03LSGATMA1BSC120N03LSGBSC120N03LSG , TDZ15J ,
DescriptionMOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ManufacturerInfineonINFINEON-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current39 A--
Rds On Drain Source Resistance10 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge15 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation28 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min25 S--
Fall Time2.2 ns--
Product TypeMOSFET--
Rise Time2.2 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time12 ns--
Typical Turn On Delay Time2.7 ns--
Part # AliasesBSC120N03LS BSC12N3LSGXT G SP000302848--
Unit Weight0.008536 oz--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
BSC120N03LSGATMA1 MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3
BSC120N03LSGATMA1 MOSFET N-CH 30V 39A TDSON-8
BSC120N03LSG Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC120N03LSG , TDZ15J , Neu und Original
BSC120N03LSGATMA1 , TDZ1 Neu und Original
BSC120N03LSGATMA1-CUT TAPE Neu und Original
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