SIHP8N50D-GE3

SIHP8N50D-GE3
Mfr. #:
SIHP8N50D-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 500V 8.7A TO220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHP8N50D-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHP8N50D-GE3 DatasheetSIHP8N50D-GE3 Datasheet (P4-P6)SIHP8N50D-GE3 Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SIHP8, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 500V, 8.7A, TO-220AB-3; Transistor Polarity:N Channel; Continuous
***Components
In a Pack of 5, N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3
***et Europe
Trans MOSFET N-CH 500V 8.7A 3-Pin(3+Tab) TO-220AB
***et
Trans MOSFET N-CH 500V 8.7A 3-Pin TO-220AB
***i-Key
MOSFET N-CH 500V 8.7A TO220AB
***
500V N-CHANNEL TO-220AB
***ment14 APAC
MOSFET, N-CH, 500V, 8.7A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:8.7A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.7ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:156W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:-; Operating Temperature Range:-55°C to +150°C
Teil # Mfg. Beschreibung Aktie Preis
SIHP8N50D-GE3
DISTI # SIHP8N50D-GE3-ND
Vishay SiliconixMOSFET N-CH 500V 8.7A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
819In Stock
  • 5000:$0.5656
  • 3000:$0.5954
  • 1000:$0.6379
  • 100:$0.9781
  • 25:$1.1908
  • 10:$1.2540
  • 1:$1.4000
SIHP8N50D-GE3
DISTI # SIHP8N50D-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 500V 8.7A 3-Pin(3+Tab) TO-220AB - Tape and Reel (Alt: SIHP8N50D-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.5189
  • 6000:$0.5329
  • 4000:$0.5479
  • 2000:$0.5719
  • 1000:$0.5889
SIHP8N50D-GE3
DISTI # SIHP8N50D-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 500V 8.7A 3-Pin(3+Tab) TO-220AB (Alt: SIHP8N50D-GE3)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.4789
  • 500:€0.4849
  • 100:€0.4929
  • 50:€0.4999
  • 25:€0.5659
  • 10:€0.6979
  • 1:€0.9729
SIHP8N50D-GE3
DISTI # 99W9515
Vishay IntertechnologiesMOSFET, N-CH, 500V, 8.7A, TO-220AB-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:8.7A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.7ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 10000:$0.5150
  • 6000:$0.5270
  • 4000:$0.5470
  • 2000:$0.6080
  • 1000:$0.6690
  • 1:$0.6970
SIHP8N50D-GE3
DISTI # 08X3793
Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 8.7A, TO-220AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:8.7A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.7ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,MSL:- RoHS Compliant: Yes0
  • 500:$0.7940
  • 250:$0.8950
  • 100:$1.0700
  • 50:$1.1800
  • 25:$1.3100
  • 10:$1.4500
  • 1:$1.5300
SIHP8N50D-E3
DISTI # 78-SIHP8N50D-E3
Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs TO-220AB
RoHS: Compliant
385
  • 1:$1.7400
  • 10:$1.4300
  • 100:$1.1000
  • 500:$0.9490
  • 1000:$0.7490
  • 2500:$0.6990
  • 5000:$0.6640
  • 10000:$0.6400
SIHP8N50D-GE3
DISTI # 78-SIHP8N50D-GE3
Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs TO-220AB
RoHS: Compliant
273
  • 1:$1.4200
  • 10:$1.1700
  • 100:$0.8960
  • 500:$0.7700
  • 1000:$0.6080
  • 2500:$0.5670
  • 5000:$0.5390
  • 10000:$0.5190
SIHP8N50D-GE3
DISTI # 7879181
Vishay IntertechnologiesMOSFET N-CH 500V 8.7A LOW CAP. TO220AB, PK7175
  • 25:£0.3480
  • 5:£0.3600
SIHP8N50DGE3Vishay IntertechnologiesPower Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
900
    SIHP8N50D-GE3
    DISTI # 2283623
    Vishay IntertechnologiesMOSFET, N-CH, 500V, 8.7A, TO-220AB
    RoHS: Compliant
    1
    • 5000:$0.8550
    • 3000:$0.8980
    • 1000:$0.9620
    • 100:$1.4800
    • 25:$1.8000
    • 10:$1.8900
    • 1:$2.1100
    SIHP8N50D-GE3Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs TO-220AB
    RoHS: Compliant
    Americas -
      Bild Teil # Beschreibung
      SIHP8N50D-E3

      Mfr.#: SIHP8N50D-E3

      OMO.#: OMO-SIHP8N50D-E3

      MOSFET 500V Vds 30V Vgs TO-220AB
      SIHP8N50D-E3

      Mfr.#: SIHP8N50D-E3

      OMO.#: OMO-SIHP8N50D-E3-VISHAY

      Darlington Transistors MOSFET 500V 850mOhm@10V 8.7A N-Ch D-SRS
      SIHP8N50D-GE3

      Mfr.#: SIHP8N50D-GE3

      OMO.#: OMO-SIHP8N50D-GE3-VISHAY

      MOSFET N-CH 500V 8.7A TO220AB
      SIHP8N50DGE3

      Mfr.#: SIHP8N50DGE3

      OMO.#: OMO-SIHP8N50DGE3-1190

      Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4000
      Menge eingeben:
      Der aktuelle Preis von SIHP8N50D-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,78 $
      0,78 $
      10
      0,74 $
      7,40 $
      100
      0,70 $
      70,07 $
      500
      0,66 $
      330,85 $
      1000
      0,62 $
      622,80 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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