SQS462EN-T1-GE3

Mfr. #:: SQS462EN-T1-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET RECOMMENDED ALT 78-SQS462EN-T1_GE3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SQS462EN-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PowerPAK-1212-8

Qualifikation:: AEC-Q101

Handelsname:: TrenchFET

Verpackung:: Spule

Höhe:: 1.04 mm

Länge:: 3.3 mm

Serie:: SQ

Breite:: 3.3 mm

Marke:: Vishay / Siliconix

Produktart:: MOSFET

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Teil # Aliase:: SQS462EN-GE3

Tags: SQS462EN-T, SQS462, SQS46, SQS4, SQS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SQS462EN-T1-GE3 Beschreibung

***ure Electronics: Single N-Channel 60 V 0.063 Ohms Surface Mount Power Mosfet - PowerPAK-1212-8

***ical: Trans MOSFET N-CH 60V 8A Automotive 8-Pin PowerPAK 1212 T/R

***nell: MOSFET, N-CH, 60V, 8A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:33W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited

***ure Electronics: Single N-Channel 60 V 0.040 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8L

***ical: Trans MOSFET N-CH 60V 8A Automotive 5-Pin(4+Tab) PowerPAK SO EP T/R

***nell: MOSFET, N-CH, 60V, 8A, POWERPAKSO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 34W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C

***emi: N-Channel PowerTrench® MOSFET 60V, 6.1A, 35mΩ

***ure Electronics: N-Channel 60 V 35 mOhm SMT PowerTrench Mosfet SOIC-8

***Yang: Trans MOSFET N-CH 60V 6.1A 8-Pin SOIC N T/R - Tape and Reel

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

***ure Electronics: Single N-Channel 40 V 3 W 13 nC Silicon Surface Mount Mosfet - SOT-23

***ical: Trans MOSFET N-CH 40V 8A Automotive 3-Pin SOT-23 T/R

***ark: MOSFET, AEC-Q101, N-CH, 60V, 2.3A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

***nsix Microsemi: Power Field-Effect Transistor, 8A I(D), 40V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***nell: MOSFET, AUTO, N-CH, 60V, 2.3A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 3 - 168 hours; SVHC: No SVHC (17-Dec-2015)

***emi: N-Channel PowerTrench® MOSFET, 60V, 10A, 14mΩ

***ure Electronics: N-Channel 60 V 14 mOhm SMT PowerTrench Mosfet SOIC-8

***Yang: Trans MOSFET N-CH 60V 10A 8-Pin SOIC N T/R - Tape and Reel

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:10A; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

***ical: Trans MOSFET N-CH 60V 6.3A 8-Pin PowerPAK 1212-8 T/R

*** Electronics: MOSFET N-CH 60V 6A 1212-8 PPAK

***ure Electronics: N-CH POWERPAK 1212-8 60V 19MOHM @ 10V

***ment14 APAC: MOSFET,N CH,DIODE,60V,9.5A,12128PPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):17500µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:3.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.5A; Power Dissipation Pd:3.8W; Voltage Vgs Max:20V

***eco: Transistor MOSFET Negative Channel 60 Volt 8A 8-Pin SOIC N T/R

***emi: N-Channel PowerTrenchTM MOSFET, 60V, 8A, 20mΩ

*** Source Electronics: Trans MOSFET N-CH 60V 8A 8-Pin SOIC T/R / MOSFET N-CH 60V 8A 8-SO

***ure Electronics: N-Channel 60 V 20 mOhm PowerTrench Mosfet SOIC-8

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:8A; On Resistance, Rds(on):0.02ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***ment14 APAC: MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:8A; Current Id Max:8A; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; Pulse Current Idm N Channel 2:50A; SMD Marking:FDS5680; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:4V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SQS462EN-T1-GE3 DISTI # V72:2272_09219241	Vishay Intertechnologies	N-CHANNEL 60V PPAK 1213	200	100:$0.6141 25:$0.7841 10:$0.7856 1:$0.9209
SQS462EN-T1-GE3 DISTI # V36:1790_09219241	Vishay Intertechnologies	N-CHANNEL 60V PPAK 1213	0
SQS462EN-T1_GE3 DISTI # SQS462EN-T1_GE3TR-ND	Vishay Siliconix	MOSFET N-CH 60V 8A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.4428
SQS462EN-T1-GE3 DISTI # 30276244	Vishay Intertechnologies	N-CHANNEL 60V PPAK 1213	200	100:$0.6602 25:$0.8429 17:$0.8445
SQS462EN-T1_GE3 DISTI # SQS462EN-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 8A 8-Pin PowerPAK 1212 T/R (Alt: SQS462EN-T1_GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.6249 6000:€0.4259 12000:€0.3659 18000:€0.3379 30000:€0.3149
SQS462EN-T1_GE3 DISTI # SQS462EN-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 8A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SQS462EN-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3929 6000:$0.3809 12000:$0.3649 18000:$0.3549 30000:$0.3459
SQS462EN-T1_GE3 DISTI # SQS462EN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 8A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SQS462EN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0
SQS462EN-T1_GE3 DISTI # 76Y1599	Vishay Intertechnologies	N-CHANNEL 60-V (D-S) 175C MOSFET	0	2500:$0.3730 1000:$0.4050 500:$0.4700 100:$0.5380 50:$0.6080 25:$0.6700 10:$0.7320 1:$0.9450
SQS462EN-T1_GE3 DISTI # 78-SQS462EN-T1_GE3	Vishay Intertechnologies	MOSFET 60V 8A 33W AEC-Q101 Qualified RoHS: Compliant	14050	1:$0.9900 10:$0.9740 100:$0.7750 500:$0.6070 1000:$0.4840 3000:$0.4400 6000:$0.3800 9000:$0.3660
SQS462EN-T1-GE3 DISTI # 78-SQS462EN-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 78-SQS462EN-T1_GE3 RoHS: Compliant	0
SQS462EN-T1_GE3 DISTI # 7879525P	Vishay Intertechnologies	MOSFET N-CH 60V 8A 175C POWERPAK 1212-8, RL	35	100:£0.4140 50:£0.4320
SQS462EN-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 78-SQS462EN-T1_GE3 RoHS: Compliant	Americas -
SQS462EN-T1-GE3 DISTI # 2364139	Vishay Intertechnologies	MOSFET, N-CH, 60V, 8A, PPAK1212-8 RoHS: Compliant	0	9000:$0.5330 3000:$0.5520 1000:$0.5710 500:$0.6150 250:$0.7110 100:$0.8200 10:$1.0300 1:$1.2800

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SQS462EN-T1_GE3 OMO.#: OMO-SQS462EN-T1-GE3-069	MOSFET 60V 8A 33W AEC-Q101 Qualified
	Mfr.#: SQS462EN-T1-GE3 OMO.#: OMO-SQS462EN-T1-GE3-A0A	MOSFET RECOMMENDED ALT 78-SQS462EN-T1_GE3
	Mfr.#: SQS462EN-T1_GE3-CUT TAPE OMO.#: OMO-SQS462EN-T1-GE3-CUT-TAPE-1190	Neu und Original
	Mfr.#: SQS462EN OMO.#: OMO-SQS462EN-1190	Neu und Original
	Mfr.#: SQS462EN-T1-GE3 OMO.#: OMO-SQS462EN-T1-GE3-1190	N-CHANNEL 60V PPAK 1213
	Mfr.#: SQS462EN-T1_GE3 OMO.#: OMO-SQS462EN-T1-GE3-VISHAY	MOSFET N-CH 60V 8A 1212-8

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2500
Menge eingeben:

Der aktuelle Preis von SQS462EN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Beginnen mit

SQS462EN-T 3
SQS462 4
SQS46 11
SQS4 42
SQS 101

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SQS462EN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes