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| PartNumber | SQS401EN-T1_GE3 | SQS401ENW-T1_GE3 | SQS401EN-T1-GE3 |
| Description | MOSFET 40V 16A 62.5W AEC-Q101 Qualified | MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQS401EN-T1_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 16 A | 16 A | - |
| Rds On Drain Source Resistance | 29 mOhms | 20 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 21.2 nC | 21.2 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 62.5 W | 62.5 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.04 mm | 1.04 mm | 1.04 mm |
| Length | 3.3 mm | 3.3 mm | 3.3 mm |
| Series | SQ | SQ | SQ |
| Width | 3.3 mm | 3.3 mm | 3.3 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 12 S | 12 S | - |
| Fall Time | 10.2 ns | 10.2 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | 10 ns | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 36.5 ns | 36.5 ns | - |
| Typical Turn On Delay Time | 11 ns | 11 ns | - |
| Transistor Type | - | 1 P-Channel | - |
| Part # Aliases | - | - | SQS401EN-GE3 |
| Unit Weight | - | - | 0.012804 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQS415ENW-T1_GE3 | MOSFET -40V Vds 20V Vgs POWERPAK 1212-8W | |
| SQS411ENW-T1_GE3 | MOSFET -40V Vds 20V Vgs POWERPAK 1212-8W | ||
| SQS407ENW-T1_GE3 | MOSFET -30V Vds 20V Vgs PowerPAK 1212-8W | ||
| SQS460ENW-T1_GE3 | MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified | ||
| SQS481ENW-T1_GE3 | MOSFET -150V Vds PowerPAK AEC-Q101 Qualified | ||
| SQS401EN-T1_GE3 | MOSFET 40V 16A 62.5W AEC-Q101 Qualified | ||
| SQS401ENW-T1_GE3 | MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified | ||
| SQS460EN-T1_GE3 | MOSFET 60V 8A 39W AEC-Q101 Qualified | ||
| SQS423EN-T1_GE3 | MOSFET P-Channel 30V AEC-Q101 Qualified | ||
| SQS462EN-T1_GE3 | MOSFET 60V 8A 33W AEC-Q101 Qualified | ||
| SQS482EN-T1_GE3 | MOSFET 30V 16A 62W AEC-Q101 Qualified | ||
| SQS405EN-T1_GE3 | MOSFET P-Channel 12V AEC-Q101 Qualified | ||
| SQS420EN-T1_GE3 | MOSFET 20V 8A 18W AEC-Q101 Qualified | ||
| SQS405ENW-T1_GE3 | MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified | ||
| SQS462EN-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQS462EN-T1_GE3 | ||
| SQS405EN-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQS405EN-T1_GE3 | ||
| SQS423EN-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQS423EN-T1_GE3 | ||
| SQS482EN-T1-GE3 | MOSFET RECOMMENDED ALT 781-SQS482EN-T1_GE3 | ||
| SQS401EN-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQS401EN-T1_GE3 | ||
| SQS420EN-T1-GE3 | IGBT Transistors MOSFET 20V 8A 18W TrenchFET | ||
| SQS482EN-T1-GE3 | IGBT Transistors MOSFET 30V 16A 62W TrenchFET | ||
| SQS460EN-T1-GE3 | IGBT Transistors MOSFET 60V 8A 39W | ||
| SQS423EN-T1-GE3 | RF Bipolar Transistors MOSFET P-Channel 30V Automotive MOSFET | ||
| SQS405EN-T1-GE3 | RF Bipolar Transistors MOSFET P-Channel 12V Automotive MOSFET | ||
| SQS460EN-T1_GE3-CUT TAPE | Neu und Original | ||
| SQS462EN-T1_GE3-CUT TAPE | Neu und Original | ||
| SQS401EN-T1-GE3 | MOSFET 40V 16A 62.5W P-Ch Automotive | ||
| SQS400EN-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQS840EN-T1_GE3 | ||
| SQS401EN | Neu und Original | ||
| SQS401ENW-T1-GE3 | Neu und Original | ||
| SQS404EN-T1-GE3 | Neu und Original | ||
| SQS405ENW-T1-GE3 | Neu und Original | ||
| SQS410EN-T1-GE3 | Neu und Original | ||
| SQS430EN-T1-GE3 | Neu und Original | ||
| SQS460ENT1GE3 | Power Field-Effect Transistor, 8A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SQS462EN | Neu und Original | ||
| SQS462EN-T1-GE3 | N-CHANNEL 60V PPAK 1213 | ||
| SQS464EEN-T1-GE3 | Neu und Original | ||
| SQS466EEN-T1-GE3 | Neu und Original | ||
| SQS472EN-T1-GE3 | Neu und Original | ||
| SQS481ENW-T1-GE3 | Neu und Original | ||
Vishay |
SQS401EN-T1_GE3 | MOSFET P-CH 40V 16A | |
| SQS401ENW-T1_GE3 | MOSFET P-CH 40V 16A POWERPAK1212 | ||
| SQS420EN-T1_GE3 | MOSFET N-CH 20V 8A 1212-8 | ||
| SQS482EN-T1_GE3 | MOSFET N-CH 30V 16A 1212-8 | ||
| SQS460EN-T1_GE3 | MOSFET N-CH 60V 8A | ||
| SQS423EN-T1_GE3 | MOSFET P-CH 30V 16A POWERPAK1212 | ||
| SQS405EN-T1_GE3 | MOSFET P-CH 12V 16A POWERPAK1212 | ||
| SQS462EN-T1_GE3 | MOSFET N-CH 60V 8A 1212-8 | ||
| SQS481ENW-T1_GE3 | MOSFET P-CH 150V 4.7A 1212-8 |