IPB200N25N3GATMA1

Mfr. #:: IPB200N25N3GATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPB200N25N3GATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PG-TO-263-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 250 V

Id - Kontinuierlicher Drainstrom:: 64 A

Rds On - Drain-Source-Widerstand:: 20 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 2 V

Vgs - Gate-Source-Spannung:: 10 V

Qg - Gate-Ladung:: 64 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 300 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: OptiMOS

Verpackung:: Spule

Höhe:: 4.4 mm

Länge:: 10 mm

Serie:: OptiMOS 3

Transistortyp:: 1 N-Channel

Breite:: 9.25 mm

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 61 S

Abfallzeit:: 12 ns

Produktart:: MOSFET

Anstiegszeit:: 20 ns

Werkspackungsmenge:: 1000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 45 ns

Typische Einschaltverzögerungszeit:: 18 ns

Teil # Aliase:: G IPB200N25N3 IPB2N25N3GXT SP000677896

Gewichtseinheit:: 0.139332 oz

Tags: IPB200N25N3G, IPB200N25N3, IPB200N2, IPB200, IPB20, IPB2, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
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IPB200N25N3GATMA1 Beschreibung

***ark: MOSFET Transistor, N Channel, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V

***ure Electronics: Single N-Channel 250 V 20 mOhm 64 nC OptiMOS Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 250V 64A Automotive 3-Pin(2+Tab) D2PAK T/R

***ment14 APAC: MOSFET, N CH, 250V, 64A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Source Voltage Vds:250V; On Resistance

*** Stop Electro: Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Infineon's 250V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS comliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest Power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***nell: MOSFET, N CH, 250V, 64A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 64A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.0175ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***emi: N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.1mΩ

***et Europe: Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 34A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:11400pF; Current Id Max:80A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:80A; Reverse Recovery Time trr Typ:59ns; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V

***ical: Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***emi: N-Channel PowerTrench® MOSFET 40V, 80A, 2.5mΩ

***ure Electronics: N-Channel 40 V 120 A 2.5 mohm Surface Mount PowerTrench® Mosfet - TO-263AB

***r Electronics: Power Field-Effect Transistor, 28A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:28A; On Resistance, Rds(on):0.0019ohm; Rds(on) Test Voltage, Vgs:2.8V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-263; Capacitance Ciss Typ:15000pF; Current Id Max:28A; Fall Time tf:17.9ns; Junction Temperature Tj Max:175°C; No. of Transistors:1; Package / Case:D2-PAK; Pin Format:G,D,S; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:70A; Reverse Recovery Time trr Typ:52ns; Rise Time:24ns; SMD Marking:FDB8441; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***(Formerly Allied Electronics): SUM65N20-30-E3 N-channel MOSFET Transistor; 65 A; 200 V; 2+Tab-Pin TO-263

***ure Electronics: SUM65N20 Series 200 V 65 A 30 mOhm Surface Mount N-Channel Mosfet - D2PAK-3

*** Source Electronics: Trans MOSFET N-CH 200V 65A 3-Pin(2+Tab) D2PAK / MOSFET N-CH 200V 65A D2PAK

***nsix Microsemi: Power Field-Effect Transistor, 65A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: N CHANNEL MOSFET, 200V, 65A, TO-263; Tra; N CHANNEL MOSFET, 200V, 65A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V

***nell: MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:65A; Resistance, Rds On:0.03ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:140A; Max Repetitive Avalanche Energy:61mJ; Power Dissipation:375W; Power Dissipation on 1 Sq. PCB:3.75W; Power, Pd:375W; Temperature, Tj Max:175°C; Temperature, Tj Min:-55°C; Time, trr Typ:130ns; Typ Capacitance Ciss:5100pF; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V

***ure Electronics: Single N-Channel 150 V 10.8 mOhm 41 nC OptiMOS Power Mosfet - D2PAK

***ow.cn: Trans MOSFET N-CH 150V 83A Automotive 3-Pin(2+Tab) D2PAK T/R

***ment14 APAC: MOSFET, N CH, 150V, 83A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:83A; Source Voltage Vds:150V; On Resistance

***icontronic: Power Field-Effect Transistor, 83A I(D), 150V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon SCT: The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO263-3, RoHS

***nell: MOSFET, N CH, 150V, 83A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 83A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0091ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 214W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***ure Electronics: N-Channel 60 V 3.5 mOhm Surface Mount PowerTrench® Mosfet - D2PAK-3

***emi: N-Channel PowerTrench® MOSFET 60 V, 80 A, 3.5 mΩ

***Yang: Trans MOSFET N-CH 60V 22A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***r Electronics: Power Field-Effect Transistor, 22A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N, SMD, TO-263AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:80A; Resistance, Rds On:0.0035ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-263AB; Termination Type:SMD

***ure Electronics: Single N-Channel 200V 10.7 mOhm 65 nC OptiMOS Power Mosfet - D2PAK

***ow.cn: Trans MOSFET N-CH 200V 88A Automotive 3-Pin(2+Tab) D2PAK T/R

***nell: MOSFET, N-CH, 200V, 88A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 88A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.0096ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P

***ineon: Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPB200N25N3GATMA1 DISTI # V72:2272_06377749	Infineon Technologies AG	Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	35	25:$5.2980 10:$5.5550 1:$6.7496
IPB200N25N3GATMA1 DISTI # V36:1790_06377749	Infineon Technologies AG	Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$3.0230 500000:$3.0250 100000:$3.2410 10000:$3.6160 1000:$3.6780
IPB200N25N3GATMA1 DISTI # IPB200N25N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 250V 64A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	2000:$3.5419 1000:$3.6781
IPB200N25N3GATMA1 DISTI # IPB200N25N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 250V 64A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	500:$4.3497 100:$4.9952 10:$6.0330 1:$6.6800
IPB200N25N3GATMA1 DISTI # IPB200N25N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 250V 64A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	500:$4.3497 100:$4.9952 10:$6.0330 1:$6.6800
IPB200N25N3GATMA1 DISTI # 33713077	Infineon Technologies AG	Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$5.4688
IPB200N25N3GATMA1 DISTI # 32885127	Infineon Technologies AG	Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	35	2:$6.7496
IPB200N25N3GATMA1 DISTI # IPB200N25N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB200N25N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$3.1900 6000:$3.2900 4000:$3.3900 2000:$3.5900 1000:$3.6900
IPB200N25N3GATMA1 DISTI # SP000677896	Infineon Technologies AG	Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: SP000677896) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€2.7900 6000:€2.9900 4000:€3.1900 2000:€3.2900 1000:€3.4900
IPB200N25N3GATMA1 DISTI # 79X1433	Infineon Technologies AG	MOSFET, N-CH, 250V, 64A, TO-263- 3,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.0175ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	186	500:$4.0600 250:$4.4500 100:$4.6600 50:$5.0100 25:$5.3700 10:$5.6400 1:$6.2300
IPB200N25N3 G DISTI # 726-IPB200N25N3GXT	Infineon Technologies AG	MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 RoHS: Compliant	0	1:$6.1700 10:$5.5800 25:$5.3200 100:$4.6100 250:$4.4100 500:$4.0200 1000:$3.5000 2000:$3.3700
IPB200N25N3GATMA1 DISTI # 726-IPB200N25N3GATMA	Infineon Technologies AG	MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 RoHS: Compliant	0	1:$6.1700 10:$5.5800 25:$5.3200 100:$4.6100 250:$4.4100 500:$4.0200 1000:$3.5000 2000:$3.3700
IPB200N25N3GATMA1	Infineon Technologies AG	Single N-Channel 250 V 20 mOhm 64 nC OptiMOS Power Mosfet - D2PAK RoHS: Not Compliant	1000Reel	1000:$3.3300
IPB200N25N3GATMA1 DISTI # 8986870	Infineon Technologies AG	MOSFET N-CHANNEL 250V 64A OPTIMOS TO263, PK	156	250:£3.4250 100:£3.6100 50:£3.8850 10:£4.1650 2:£5.2500
IPB200N25N3GATMA1 DISTI # XSFP00000050298	Infineon Technologies AG	RoHS: Compliant	2000 in Stock0 on Order	2000:$4.4400 1000:$4.7600
IPB200N25N3GATMA1 DISTI # 2432726RL	Infineon Technologies AG	MOSFET, N CH, 250V, 64A, TO-263-3 RoHS: Compliant	0	25:$8.0200 10:$8.4100 1:$9.3000
IPB200N25N3GATMA1 DISTI # 2432726	Infineon Technologies AG	MOSFET, N CH, 250V, 64A, TO-263-3 RoHS: Compliant	0	25:$8.0200 10:$8.4100 1:$9.3000
IPB200N25N3GATMA1 DISTI # 2432726	Infineon Technologies AG	MOSFET, N CH, 250V, 64A, TO-263-3	0	500:£3.1300 250:£3.4300 100:£3.5900 10:£4.1400 1:£5.3000

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2500
Menge eingeben:

Der aktuelle Preis von IPB200N25N3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~6,17 $~~; ~~6,17 $~~

10: ~~5,58 $~~; ~~55,80 $~~

25: ~~5,32 $~~; ~~133,00 $~~

100: ~~4,61 $~~; ~~461,00 $~~

250: ~~4,41 $~~; ~~1 102,50 $~~

500: ~~4,02 $~~; ~~2 010,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IPB200N25N3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes