PartNumber | IPB200N15N3 G | IPB200N25N3 G | IPB200N15N3GATMA1 |
Description | MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | MOSFET MV POWER MOS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 150 V | 250 V | - |
Id Continuous Drain Current | 50 A | 64 A | - |
Rds On Drain Source Resistance | 20 mOhms | 17.5 mOhms | - |
Vgs th Gate Source Threshold Voltage | 4 V | 2 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 31 nC | 86 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 150 W | 300 W | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 4.4 mm | 4.4 mm | 4.4 mm |
Length | 10 mm | 10 mm | 10 mm |
Series | OptiMOS 3 | OptiMOS 3 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | OptiMOS 3 Power-Transistor | OptiMOS 3 Power-Transistor | - |
Width | 9.25 mm | 9.25 mm | 9.25 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 57 S, 29 S | 61 S | - |
Fall Time | 6 ns | 12 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 11 ns | 20 ns | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 23 ns | 45 ns | - |
Typical Turn On Delay Time | 14 ns | 18 ns | - |
Part # Aliases | IPB200N15N3GATMA1 IPB2N15N3GXT SP000414740 | IPB200N25N3GATMA1 IPB2N25N3GXT SP000677896 | IPB200N15N3 IPB2N15N3GXT SP000414740 |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Hersteller | Teil # | Beschreibung | RFQ |
---|---|---|---|
Infineon Technologies |
IPB240N03S4LR8ATMA1 | MOSFET N-CHANNEL_30/40V | |
IPB240N04S4R9ATMA1 | MOSFET N-CHANNEL_30/40V | ||
IPB240N04S41R0ATMA1 | MOSFET N-CHANNEL_30/40V | ||
IPB200N15N3 G | MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 | ||
IPB22N03S4L-15 | MOSFET N-Ch 30V 22A D2PAK-2 OptiMOS-T2 | ||
IPB200N25N3 G | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | ||
IPB200N25N3GATMA1 | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | ||
IPB240N03S4LR9ATMA1 | MOSFET N-CHANNEL_30/40V | ||
IPB22N03S4L15ATMA1 | MOSFET N-CH 30V 22A TO263-3 | ||
IPB240N03S4LR8ATMA1 | MOSFET N-CH TO263-7 | ||
IPB200N15N3GATMA1 | MOSFET N-CH 150V 50A TO263-3 | ||
IPB200N25N3GATMA1 | MOSFET N-CH 250V 64A TO263-3 | ||
IPB230N06L3GATMA1 | MOSFET N-CH 60V 30A TO263-3 | ||
IPB240N03S4LR9ATMA1 | MOSFET N-CH TO263-7 | ||
IPB240N04S41R0ATMA1 | MOSFET N-CH TO263-7 | ||
IPB240N04S4R9ATMA1 | MOSFET N-CH TO263-7 | ||
IPB25N06S3-25 | MOSFET N-CH 55V 25A D2PAK | ||
IPB25N06S3L-22 | MOSFET N-CH 55V 25A D2PAK | ||
Infineon Technologies |
IPB200N15N3GATMA1 | MOSFET MV POWER MOS | |
IPB200N25N3G | POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | ||
IPB200N15N3GATMA1-CUT TAPE | Neu und Original | ||
IPB2 | Neu und Original | ||
IPB200N15N | Neu und Original | ||
IPB200N15N3 | Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
IPB200N15N3 G | Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) TO-263 | ||
IPB200N15N3G | Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
IPB200N15N3G 200N15N | Neu und Original | ||
IPB200N15N3GS | Neu und Original | ||
IPB200N15N3S | Neu und Original | ||
IPB200N25N | Neu und Original | ||
IPB200N25N3 | Neu und Original | ||
IPB200N25N3 G | Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: IPB200N25N3 G) | ||
IPB200N25N3 G(SP0006778 | Neu und Original | ||
IPB200N25N3G(SP00067789 | Neu und Original | ||
IPB200N25N3G(SP000677896 | Neu und Original | ||
IPB200N25N3GXT | Neu und Original | ||
IPB20N03L | Neu und Original | ||
IPB20N10N5 | Neu und Original | ||
IPB20N60C3 | Neu und Original | ||
IPB22N03S4-15 | Neu und Original | ||
IPB22N03S4L-15 | MOSFET N-Ch 30V 22A D2PAK-2 OptiMOS-T2 | ||
IPB230N06L3 | Neu und Original | ||
IPB230N06L3G | Power Field-Effect Transistor, 30A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
IPB240N03S4L-R8 | Neu und Original | ||
IPB240N03S4LR8ATMA1928 | - Bulk (Alt: IPB240N03S4LR8ATMA1928) | ||
IPB25N06S3-22 | Neu und Original | ||
IPB260N06N3 | Neu und Original | ||
IPB260N06N3G | Power Field-Effect Transistor, 27A I(D), 60V, 0.0257ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
IPB260N06N3 G | IGBT Transistors MOSFET N-Ch 200V 27A D2PAK-2 | ||
IPB230N06L3 G | IGBT Transistors MOSFET N-Ch 200V 30A D2PAK-2 |