IPB260N06N3G

IPB260N06N3G
Mfr. #:
IPB260N06N3G
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Power Field-Effect Transistor, 27A I(D), 60V, 0.0257ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB260N06N3G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IPB260N06N3G, IPB260, IPB26, IPB2, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
Teil # Mfg. Beschreibung Aktie Preis
IPB260N06N3GATMA1
DISTI # IPB260N06N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 27A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IPB260N06N3GATMA1
    DISTI # IPB260N06N3GATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 60V 27A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IPB260N06N3GATMA1
      DISTI # IPB260N06N3GATMA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 60V 27A TO263-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IPB260N06N3 G
        DISTI # 726-IPB260N06N3G
        Infineon Technologies AGMOSFET N-Ch 200V 27A D2PAK-2
        RoHS: Compliant
        0
          IPB260N06N3GInfineon Technologies AGPower Field-Effect Transistor, 27A I(D), 60V, 0.0257ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          RoHS: Compliant
          1940
          • 1000:$0.3200
          • 500:$0.3300
          • 100:$0.3500
          • 25:$0.3600
          • 1:$0.3900
          Bild Teil # Beschreibung
          IPB260N06N3

          Mfr.#: IPB260N06N3

          OMO.#: OMO-IPB260N06N3-1190

          Neu und Original
          IPB260N06N3G

          Mfr.#: IPB260N06N3G

          OMO.#: OMO-IPB260N06N3G-1190

          Power Field-Effect Transistor, 27A I(D), 60V, 0.0257ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          IPB260N06N3GATMA1

          Mfr.#: IPB260N06N3GATMA1

          OMO.#: OMO-IPB260N06N3GATMA1-INFINEON-TECHNOLOGIES

          MOSFET N-CH 60V 27A TO263-3
          IPB260N06N3 G

          Mfr.#: IPB260N06N3 G

          OMO.#: OMO-IPB260N06N3-G-126

          IGBT Transistors MOSFET N-Ch 200V 27A D2PAK-2
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          1000
          Menge eingeben:
          Der aktuelle Preis von IPB260N06N3G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          0,52 $
          0,52 $
          10
          0,50 $
          4,99 $
          100
          0,47 $
          47,25 $
          500
          0,45 $
          223,15 $
          1000
          0,42 $
          420,00 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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