 | | | |
| PartNumber | IPB260N06N3 | IPB260N06N3G | IPB260N06N3 G |
| Description | Power Field-Effect Transistor, 27A I(D), 60V, 0.0257ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | IGBT Transistors MOSFET N-Ch 200V 27A D2PAK-2 |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| IPB260N06N3 | Neu und Original | ||
| IPB260N06N3G | Power Field-Effect Transistor, 27A I(D), 60V, 0.0257ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB26CN10 | Neu und Original | ||
| IPB26CN10N | - Bulk (Alt: IPB26CN10N) | ||
| IPB26CN10N G | MOSFET N-Ch 100V 35A D2PAK-2 | ||
| IPB26CN10NG | Neu und Original | ||
| IPB26CN10NG(IRF540NS) | Neu und Original | ||
| IPB26CN10NG,26CN10N | Neu und Original | ||
| IPB26CNE8NG | Neu und Original | ||
| IPB260N06N3 G | IGBT Transistors MOSFET N-Ch 200V 27A D2PAK-2 | ||
Infineon Technologies |
IPB260N06N3GATMA1 | MOSFET N-CH 60V 27A TO263-3 | |
| IPB26CN10NGATMA1 | MOSFET N-CH 100V 35A TO263-3 | ||
| IPB26CNE8N G | MOSFET N-CH 85V 35A TO263-3 |