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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Teil # | Mfg. | Beschreibung | Aktie | Preis |
---|---|---|---|---|
IPB26CNE8N G DISTI # IPB26CNE8NG-ND | Infineon Technologies AG | MOSFET N-CH 85V 35A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call |
Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: IPB260N06N3G OMO.#: OMO-IPB260N06N3G-1190 |
Power Field-Effect Transistor, 27A I(D), 60V, 0.0257ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
Mfr.#: IPB260N06N3GATMA1 |
MOSFET N-CH 60V 27A TO263-3 | |
Mfr.#: IPB26CN10 OMO.#: OMO-IPB26CN10-1190 |
Neu und Original | |
Mfr.#: IPB26CN10N OMO.#: OMO-IPB26CN10N-1190 |
- Bulk (Alt: IPB26CN10N) | |
Mfr.#: IPB26CN10N G OMO.#: OMO-IPB26CN10N-G-1190 |
MOSFET N-Ch 100V 35A D2PAK-2 | |
Mfr.#: IPB26CN10NG OMO.#: OMO-IPB26CN10NG-1190 |
Neu und Original | |
Mfr.#: IPB26CN10NG(IRF540NS) |
Neu und Original | |
Mfr.#: IPB26CN10NGATMA1 |
MOSFET N-CH 100V 35A TO263-3 | |
Mfr.#: IPB26CNE8NG OMO.#: OMO-IPB26CNE8NG-1190 |
Neu und Original | |
Mfr.#: IPB260N06N3 G OMO.#: OMO-IPB260N06N3-G-126 |
IGBT Transistors MOSFET N-Ch 200V 27A D2PAK-2 |