IPB200N15N3G

Mfr. #:: IPB200N15N3G
Hersteller:: Rochester Electronics, LLC
Beschreibung:: Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPB200N15N3G Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: INFINEON

Produktkategorie: FETs - Einzeln

Tags: IPB200N15N3G, IPB200N15N3, IPB200N1, IPB200, IPB20, IPB2, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPB200N15N3GATMA1 DISTI # 31077231	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	4000	2000:$1.2425 1000:$1.3875
IPB200N15N3 G DISTI # 30579106	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) TO-263 RoHS: Compliant	1000	500:$1.6575 100:$1.8870 50:$2.0145 10:$2.3843
IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 150V 50A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1999In Stock	500:$1.8473 100:$2.3751 10:$2.9560 1:$3.2700
IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 50A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1999In Stock	500:$1.8473 100:$2.3751 10:$2.9560 1:$3.2700
IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 150V 50A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	1000:$1.4861
IPB200N15N3 G DISTI # C1S322000088900	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	100:$1.4800 50:$1.5800 10:$1.8700 1:$2.2000
IPB200N15N3GATMA1 DISTI # C1S322000281482	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	4000	1000:$1.3800
IPB200N15N3 G DISTI # SP000414740	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R (Alt: SP000414740) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.8900 2000:€1.4900 4000:€1.1900 6000:€1.0900 10000:€1.0900
IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB200N15N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.2900 2000:$1.1900 4000:$1.1900 6000:$1.1900 10000:$1.0900
IPB200N15N3GATMA1 DISTI # SP000414740	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R (Alt: SP000414740) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.5199 2000:€1.2669 4000:€1.1689 6000:€1.0859 10000:€1.0129
IPB200N15N3GATMA1 DISTI # 60R2679	Infineon Technologies AG	MOSFET, N CH, 150V, 50A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,No. of Pins:3PinsRoHS Compliant: Yes	0	1:$2.8600 10:$2.5700 100:$2.0600 500:$1.6900
IPB200N15N3 G DISTI # 726-IPB200N15N3G	Infineon Technologies AG	MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 RoHS: Compliant	0	1:$2.7500 10:$2.3300 100:$1.8700 500:$1.6400 1000:$1.3600
IPB200N15N3G	Infineon Technologies AG	Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	127	1000:$1.1200 500:$1.1800 100:$1.2300 25:$1.2800 1:$1.3800
IPB200N15N3GATMA1 DISTI # 7545443	Infineon Technologies AG	MOSFET N-CHANNEL 150V 50A OPTIMOS3 TO263, PK	286	2:£2.0250 10:£1.6050 50:£1.4450 250:£1.2850 500:£1.1250
IPB200N15N3G DISTI # XSKDRABV0030580	INF	RoHS: Compliant	720	1000:$1.9000
IPB200N15N3GATMA1 DISTI # 1775559	Infineon Technologies AG	MOSFET, N CH, 50A, 150V, PG-TO263-3 RoHS: Compliant	954	1:£2.0500 10:£1.4600 100:£1.3800 250:£1.3000 500:£1.1400

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IPB200N25N3 G OMO.#: OMO-IPB200N25N3-G	MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3
	Mfr.#: IPB200N15N3GATMA1 OMO.#: OMO-IPB200N15N3GATMA1	MOSFET MV POWER MOS
	Mfr.#: IPB200N15N OMO.#: OMO-IPB200N15N-1190	Neu und Original
	Mfr.#: IPB200N15N3 OMO.#: OMO-IPB200N15N3-1190	Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
	Mfr.#: IPB200N15N3 G OMO.#: OMO-IPB200N15N3-G-1190	Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) TO-263
	Mfr.#: IPB200N15N3G OMO.#: OMO-IPB200N15N3G-1190	Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
	Mfr.#: IPB200N15N3G 200N15N OMO.#: OMO-IPB200N15N3G-200N15N-1190	Neu und Original
	Mfr.#: IPB200N15N3S OMO.#: OMO-IPB200N15N3S-1190	Neu und Original
	Mfr.#: IPB200N25N3 G(SP0006778 OMO.#: OMO-IPB200N25N3-G-SP0006778-1190	Neu und Original
	Mfr.#: IPB200N25N3G(SP000677896 OMO.#: OMO-IPB200N25N3G-SP000677896-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4000
Menge eingeben:

Der aktuelle Preis von IPB200N15N3G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,68 $~~; ~~1,68 $~~

10: ~~1,60 $~~; ~~15,96 $~~

100: ~~1,51 $~~; ~~151,20 $~~

500: ~~1,43 $~~; ~~714,00 $~~

1000: ~~1,34 $~~; ~~1 344,00 $~~

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IPB200N15N3G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes