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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IPB200N15N3GATMA1 DISTI # V72:2272_06383118 | Infineon Technologies AG | Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 1000 |
|
| IPB200N15N3GATMA1 DISTI # V36:1790_06383118 | Infineon Technologies AG | Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 1000 |
|
| IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 150V 50A TO263-3 Min Qty: 1 Container: Cut Tape (CT) | 738In Stock |
|
| IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 150V 50A TO263-3 Min Qty: 1 Container: Digi-Reel® | 738In Stock |
|
| IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 150V 50A TO263-3 Min Qty: 1000 Container: Tape & Reel (TR) | On Order |
|
| IPB200N15N3GATMA1 DISTI # 34776195 | Infineon Technologies AG | Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 4000 |
|
| IPB200N15N3GATMA1 DISTI # 33099117 | Infineon Technologies AG | Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 1000 |
|
| IPB200N15N3GATMA1 DISTI # 32663654 | Infineon Technologies AG | Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 1000 |
|
| IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB200N15N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB200N15N3GATMA1 DISTI # 60R2679 | Infineon Technologies AG | MOSFET, N CH, 150V, 50A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,No. of Pins:3PinsRoHS Compliant: Yes RoHS: Compliant | 811 |
|
| IPB200N15N3 G DISTI # 726-IPB200N15N3G | Infineon Technologies AG | MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 RoHS: Compliant | 671 |
|
| IPB200N15N3GATMA1 DISTI # 7545443 | Infineon Technologies AG | In a Pack of 2, IPB200N15N3GATMA1 N-Channel MOSFET, 50 A, 150 V OptiMOS 3, 3-Pin D2PAK Infineon, PK Min Qty: 2 Container: Package | 546 |
|
| IPB200N15N3GATMA1 DISTI # 9110834 | Infineon Technologies AG | On a Reel of 1000, IPB200N15N3GATMA1 N-Channel MOSFET, 50 A, 150 V OptiMOS 3, 3-Pin D2PAK Infineon, RL Min Qty: 1000 Container: Reel | 0 |
|
| IPB200N15N3GATMA1 DISTI # 1775559 | Infineon Technologies AG | MOSFET, N CH, 50A, 150V, PG-TO263-3 RoHS: Compliant | 811 |
|
| IPB200N15N3GATMA1 DISTI # XSKDRABV0053250 | Infineon Technologies AG | RoHS: Compliant | 3000 in Stock0 on Order |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
|
Mfr.#: IPB200N15N3 G OMO.#: OMO-IPB200N15N3-G |
MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 |
|
|
Mfr.#: IPB200N15N3GATMA1 OMO.#: OMO-IPB200N15N3GATMA1 |
MOSFET MV POWER MOS |
|
Mfr.#: IPB200N15N3GATMA1-CUT TAPE |
Neu und Original |
|
Mfr.#: IPB200N15N OMO.#: OMO-IPB200N15N-1190 |
Neu und Original |
|
Mfr.#: IPB200N15N3 OMO.#: OMO-IPB200N15N3-1190 |
Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
Mfr.#: IPB200N15N3G OMO.#: OMO-IPB200N15N3G-1190 |
Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
Mfr.#: IPB200N15N3G 200N15N |
Neu und Original |
|
|
Mfr.#: IPB200N15N3GATMA1 |
MOSFET N-CH 150V 50A TO263-3 |
|
Mfr.#: IPB200N15N3GS OMO.#: OMO-IPB200N15N3GS-1190 |
Neu und Original |
|
Mfr.#: IPB200N15N3S OMO.#: OMO-IPB200N15N3S-1190 |
Neu und Original |