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IPB200N15N3 G

IPB200N15N3 G
Mfr. #:
IPB200N15N3 G
Hersteller:
Infineon Technologies
Beschreibung:
Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) TO-263
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB200N15N3 G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB200N15N3 G Mehr Informationen
Produkteigenschaft
Attributwert
Tags
IPB200N15N3G, IPB200N15N3, IPB200N1, IPB200, IPB20, IPB2, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
Infineon Automatic Opening Systems
Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths and other functions.Learn More
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IPB200N15N3GATMA1
DISTI # V72:2272_06383118		Infineon Technologies AGTrans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$1.3320
  • 500:$1.6700
  • 250:$2.0190
  • 100:$2.0710
  • 25:$2.5570
  • 10:$2.5770
  • 1:$3.2043
IPB200N15N3GATMA1
DISTI # V36:1790_06383118		Infineon Technologies AGTrans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 5000:$1.1540
  • 2000:$1.2737
  • 1000:$1.4152
IPB200N15N3GATMA1
DISTI # IPB200N15N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 150V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1748In Stock
  • 500:$1.7634
  • 100:$2.1463
  • 10:$2.6700
  • 1:$2.9700
IPB200N15N3GATMA1
DISTI # IPB200N15N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 150V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1748In Stock
  • 500:$1.7634
  • 100:$2.1463
  • 10:$2.6700
  • 1:$2.9700
IPB200N15N3GATMA1
DISTI # IPB200N15N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 150V 50A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 5000:$1.2718
  • 2000:$1.3207
  • 1000:$1.4185
IPB200N15N3GATMA1
DISTI # 33258839		Infineon Technologies AGTrans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		3000
  • 1000:$1.1436
IPB200N15N3GATMA1
DISTI # 33099117		Infineon Technologies AGTrans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 6:$3.2043
IPB200N15N3GATMA1
DISTI # 32663654		Infineon Technologies AGTrans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$1.4152
IPB200N15N3 G
DISTI # 30579106		Infineon Technologies AGTrans MOSFET N-CH 150V 50A 3-Pin(2+Tab) TO-263
RoHS: Compliant		807
  • 10:$2.7500
IPB200N15N3GATMA1
DISTI # SP000414740		Infineon Technologies AGTrans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R (Alt: SP000414740)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 2000
  • 10000:€1.0129
  • 6000:€1.0859
  • 4000:€1.1689
  • 2000:€1.2669
  • 1000:€1.5199
IPB200N15N3 G
DISTI # IPB200N15N3G		Infineon Technologies AGTrans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R - Bulk (Alt: IPB200N15N3G)
RoHS: Not Compliant
Min Qty: 295
Container: Bulk		Americas - 0
  • 2950:$1.0900
  • 590:$1.1900
  • 885:$1.1900
  • 1475:$1.1900
  • 295:$1.2900
IPB200N15N3GATMA1
DISTI # IPB200N15N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB200N15N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$1.0900
  • 2000:$1.1900
  • 4000:$1.1900
  • 6000:$1.1900
  • 1000:$1.2900
IPB200N15N3GATMA1
DISTI # 60R2679		Infineon Technologies AGMOSFET, N CH, 150V, 50A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,No. of Pins:3PinsRoHS Compliant: Yes1434
  • 500:$1.7100
  • 100:$2.0800
  • 10:$2.5900
  • 1:$2.8900
IPB200N15N3 G
DISTI # 726-IPB200N15N3G		Infineon Technologies AGMOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant		2723
  • 1:$2.7400
  • 10:$2.3300
  • 100:$1.8600
  • 500:$1.6300
  • 1000:$1.3500
  • 2000:$1.2500
  • 5000:$1.2100
IPB200N15N3GInfineon Technologies AGPower Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		127
  • 1000:$1.2200
  • 500:$1.2900
  • 100:$1.3400
  • 25:$1.4000
  • 1:$1.5100
IPB200N15N3GATMA1
DISTI # 7545443		Infineon Technologies AGMOSFET N-CHANNEL 150V 50A OPTIMOS3 TO263, PK622
  • 500:£1.1150
  • 250:£1.2700
  • 50:£1.4300
  • 10:£1.5900
  • 2:£2.0050
IPB200N15N3GATMA1
DISTI # 7545443P		Infineon Technologies AGMOSFET N-CHANNEL 150V 50A OPTIMOS3 TO263, RL6544
  • 500:£1.1150
  • 250:£1.2700
  • 50:£1.4300
  • 10:£1.5900
IPB200N15N3 GInfineon Technologies AG 747
    IPB200N15N3GATMA1
    DISTI # 1775559    		Infineon Technologies AGMOSFET, N CH, 50A, 150V, PG-TO263-31226
    • 500:£1.3900
    • 250:£1.5900
    • 100:£1.7800
    • 10:£2.2100
    • 1:£2.9100
    Bild Teil # Beschreibung
    IPB200N25N3 G

    Mfr.#: IPB200N25N3 G

    OMO.#: OMO-IPB200N25N3-G

    		 MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3
    IPB200N15N3GATMA1

    Mfr.#: IPB200N15N3GATMA1

    OMO.#: OMO-IPB200N15N3GATMA1

    		 MOSFET MV POWER MOS
    IPB200N15N3

    Mfr.#: IPB200N15N3

    OMO.#: OMO-IPB200N15N3-1190

    		 Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    IPB200N15N3G

    Mfr.#: IPB200N15N3G

    OMO.#: OMO-IPB200N15N3G-1190

    		 Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    IPB200N15N3G 200N15N

    Mfr.#: IPB200N15N3G 200N15N

    OMO.#: OMO-IPB200N15N3G-200N15N-1190

    		 Neu und Original
    IPB200N15N3GATMA1

    Mfr.#: IPB200N15N3GATMA1

    OMO.#: OMO-IPB200N15N3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 150V 50A TO263-3
    IPB200N15N3GS

    Mfr.#: IPB200N15N3GS

    OMO.#: OMO-IPB200N15N3GS-1190

    		 Neu und Original
    IPB200N25N

    Mfr.#: IPB200N25N

    OMO.#: OMO-IPB200N25N-1190

    		 Neu und Original
    IPB200N25N3G(SP000677896

    Mfr.#: IPB200N25N3G(SP000677896

    OMO.#: OMO-IPB200N25N3G-SP000677896-1190

    		 Neu und Original
    IPB200N25N3GXT

    Mfr.#: IPB200N25N3GXT

    OMO.#: OMO-IPB200N25N3GXT-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von IPB200N15N3 G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,62 $
    1,62 $
    10
    1,54 $
    15,39 $
    100
    1,46 $
    145,79 $
    500
    1,38 $
    688,45 $
    1000
    1,30 $
    1 295,90 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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