IPB200N25N3G

Mfr. #:: IPB200N25N3G
Hersteller:: INF
Beschreibung:: POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPB200N25N3G Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: INF

Produktkategorie: FETs - Einzeln

Tags: IPB200N25N3G, IPB200N25N3, IPB200N2, IPB200, IPB20, IPB2, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPB200N25N3 G DISTI # 30577452	Infineon Technologies AG	Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) TO-263 RoHS: Compliant	2209	200:$5.2657 100:$5.7375 50:$6.9233 10:$6.9997 4:$7.7648
IPB200N25N3 G DISTI # 30577735	Infineon Technologies AG	Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) TO-263 RoHS: Compliant	1459	4:$7.6125
IPB200N25N3GATMA1 DISTI # IPB200N25N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 250V 64A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	753In Stock	500:$4.5569 100:$5.4388 10:$6.6150 1:$7.3500
IPB200N25N3GATMA1 DISTI # IPB200N25N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 250V 64A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	753In Stock	500:$4.5569 100:$5.4388 10:$6.6150 1:$7.3500
IPB200N25N3GATMA1 DISTI # IPB200N25N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 250V 64A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$3.8533
IPB200N25N3 G DISTI # C1S322000438178	Infineon Technologies AG	Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) TO-263 RoHS: Compliant	1459	500:$3.1300 200:$3.3000 100:$3.6000 50:$4.3400 10:$4.3900 1:$5.2900
IPB200N25N3 G DISTI # C1S322000194201	Infineon Technologies AG	Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) TO-263 RoHS: Compliant	2209	500:$3.9200 200:$4.1300 100:$4.5000 50:$5.4300 10:$5.4900 1:$6.0900
IPB200N25N3 G DISTI # IPB200N25N3 G	Infineon Technologies AG	Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: IPB200N25N3 G) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0	1000:$3.3345 2000:$3.1975 3000:$3.1543 5000:$3.0314 10000:$2.9925 25000:$2.9177 50000:$2.8465
IPB200N25N3GATMA1 DISTI # IPB200N25N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB200N25N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$3.6900 2000:$3.5900 4000:$3.3900 6000:$3.2900 10000:$3.1900
IPB200N25N3GATMA1 DISTI # 79X1433	Infineon Technologies AG	MOSFET, N-CH, 250V, 64A, TO-263- 3,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.0175ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes	0	1:$6.1800 10:$5.5800 25:$5.3200 50:$4.9700 100:$4.6200 250:$4.4200 500:$4.0300
IPB200N25N3 G DISTI # 726-IPB200N25N3GXT	Infineon Technologies AG	MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 RoHS: Compliant	0	1:$6.1800 10:$5.5800 25:$5.3200 100:$4.6200 250:$4.4200 500:$4.0300 1000:$3.5100
IPB200N25N3GATMA1 DISTI # 726-IPB200N25N3GATMA	Infineon Technologies AG	MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 RoHS: Compliant	0	1:$6.1800 10:$5.5800 25:$5.3200 100:$4.6200 250:$4.4200 500:$4.0300 1000:$3.5100
IPB200N25N3G	Infineon Technologies AG	POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB	228	116:$7.7880 27:$8.7320 1:$14.1600
IPB200N25N3GATMA1 DISTI # 8986870P	Infineon Technologies AG	MOSFET N-CHANNEL 250V 64A OPTIMOS TO263, RL	542	10:£4.2050 50:£3.9250 100:£3.6450 250:£3.4600
IPB200N25N3GATMA1 DISTI # 8986870	Infineon Technologies AG	MOSFET N-CHANNEL 250V 64A OPTIMOS TO263, PK	178	2:£5.3050 10:£4.2050 50:£3.9250 100:£3.6450 250:£3.4600
IPB200N25N3G	Infineon Technologies AG	RoHS: Compliant	Europe - 595
IPB200N25N3 G	Infineon Technologies AG	INSTOCK	19756
IPB200N25N3GATMA1 DISTI # 2432726	Infineon Technologies AG	MOSFET, N CH, 250V, 64A, TO-263-3 RoHS: Compliant	0	1:£5.2000 10:£4.0600 100:£3.5400 250:£3.3800 500:£3.0800
IPB200N25N3GATMA1 DISTI # 2432726	Infineon Technologies AG	MOSFET, N CH, 250V, 64A, TO-263-3 RoHS: Compliant	0	1:$9.7800 10:$8.8400 25:$8.4300 100:$7.3100 250:$7.0000 500:$6.3800 1000:$5.5600
IPB200N25N3GATMA1 DISTI # 2432726RL	Infineon Technologies AG	MOSFET, N CH, 250V, 64A, TO-263-3 RoHS: Compliant	0	1:$9.7800 10:$8.8400 25:$8.4300 100:$7.3100 250:$7.0000 500:$6.3800 1000:$5.5600

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IPB200N15N3 G OMO.#: OMO-IPB200N15N3-G	MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3
	Mfr.#: IPB200N15N3GATMA1 OMO.#: OMO-IPB200N15N3GATMA1	MOSFET MV POWER MOS
	Mfr.#: IPB200N25N3G OMO.#: OMO-IPB200N25N3G-1190	POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB
	Mfr.#: IPB200N15N3 G OMO.#: OMO-IPB200N15N3-G-1190	Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) TO-263
	Mfr.#: IPB200N15N3G 200N15N OMO.#: OMO-IPB200N15N3G-200N15N-1190	Neu und Original
	Mfr.#: IPB200N15N3GATMA1 OMO.#: OMO-IPB200N15N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 150V 50A TO263-3
	Mfr.#: IPB200N15N3S OMO.#: OMO-IPB200N15N3S-1190	Neu und Original
	Mfr.#: IPB200N25N OMO.#: OMO-IPB200N25N-1190	Neu und Original
	Mfr.#: IPB200N25N3 G(SP0006778 OMO.#: OMO-IPB200N25N3-G-SP0006778-1190	Neu und Original
	Mfr.#: IPB200N25N3GATMA1 OMO.#: OMO-IPB200N25N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 250V 64A TO263-3

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4000
Menge eingeben:

Der aktuelle Preis von IPB200N25N3G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~6,78 $~~; ~~6,78 $~~

10: ~~6,44 $~~; ~~64,41 $~~

100: ~~6,10 $~~; ~~610,20 $~~

500: ~~5,76 $~~; ~~2 881,50 $~~

1000: ~~5,42 $~~; ~~5 424,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

IPB200N25N3G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes