OMO ElectronicOMO Electronic
Expand menu
0 Wagen

BSM120D12P2C005

BSM120D12P2C005
Mfr. #:
BSM120D12P2C005
Hersteller:
Rohm Semiconductor
Beschreibung:
MOSFET 2N-CH 1200V 120A MODULE
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSM120D12P2C005 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSM120D12P2C005 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Rohm Semiconductor
Produktkategorie
FETs - Arrays
Serie
BSM120D12P2C005
Produkt
Leistungshalbleitermodule
Typ
SiC-Leistungsmodul
Verpackung
Schüttgut
Montageart
Schraube
Betriebstemperaturbereich
- 40 C to + 150 C
Paket-Koffer
Modul
Betriebstemperatur
-40°C ~ 150°C (TJ)
Befestigungsart
*
Lieferanten-Geräte-Paket
Modul
Aufbau
Halbbrücke
FET-Typ
2 N-Channel (Half Bridge)
Leistung max
780W
Drain-zu-Source-Spannung-Vdss
1200V (1.2kV)
Eingangskapazität-Ciss-Vds
14000pF @ 10V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
120A
Rds-On-Max-Id-Vgs
-
Vgs-th-Max-Id
2.7V @ 22mA
Gate-Lade-Qg-Vgs
-
Tags
BSM1, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Module, N Channel, 120 A, 1.2 kV, 2.7 V RoHS Compliant: Yes
***Components
Dual SiC N-Channel SiC Power Module, 120 A, 1200 V, 4-Pin C ROHM BSM120D12P2C005
***et
Trans SiC MOSFET N-CH 1.2KV 120A 10-Pin Case C Tray
***i-Key
MOSFET 2N-CH 1200V 120A MODULE
***ukat
SiC-N-Ch-Half-Bridge+2xSBD 1200V 134A C-
***ment14 APAC
MODULE, POWER, SIC, 1200V, 120A
***p One Stop Japan
Power Module Automotive 10-Pin Tray
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
Teil # Mfg. Beschreibung Aktie Preis
BSM120D12P2C005
DISTI # BSM120D12P2C005-ND		ROHM SemiconductorMOSFET 2N-CH 1200V 120A MODULE
RoHS: Compliant
Min Qty: 1
Container: Bulk		On Order
  • 10:$372.1830
  • 1:$391.0600
BSM120D12P2C005
DISTI # BSM120D12P2C005		ROHM SemiconductorTrans SiC MOSFET N-CH 1.2KV 120A 10-Pin Case C Tray - Bulk (Alt: BSM120D12P2C005)
RoHS: Compliant
Min Qty: 12
Container: Bulk		Americas - 0
  • 12:$387.8900
  • 24:$363.6900
  • 48:$342.3900
  • 72:$323.3900
  • 120:$314.6900
BSM120D12P2C005
DISTI # 755-BSM120D12P2C005		ROHM SemiconductorDiscrete Semiconductor Modules Mod: 1200V 120A (w/ Diode)
RoHS: Compliant		0
  • 1:$391.0600
  • 5:$381.6300
BSM120D12P2C005
DISTI # 2345472		ROHM SemiconductorMODULE, POWER, SIC, 1200V, 120A
RoHS: Compliant		0
  • 1:£371.0000
  • 5:£307.0000
Bild Teil # Beschreibung
BSM120D12P2C005

Mfr.#: BSM120D12P2C005

OMO.#: OMO-BSM120D12P2C005

 Discrete Semiconductor Modules Mod: 1200V 120A (w/ Diode)
BSM120D12P2C005

Mfr.#: BSM120D12P2C005

OMO.#: OMO-BSM120D12P2C005-ROHM-SEMI

 MOSFET 2N-CH 1200V 120A MODULE
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von BSM120D12P2C005 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
472,04 $
472,04 $
10
448,43 $
4 484,33 $
100
424,83 $
42 483,15 $
500
401,23 $
200 614,90 $
1000
377,63 $
377 628,00 $
Beginnen mit
Neueste Produkte
  • IO-Link™ Devices
    IO-Link™ Devices
    Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
  • Compare BSM120D12P2C005
    Compare BSM120D12P2C005
    BSM100D12P1C004 vs BSM100GA120D vs BSM100GA120DN2
  • Large Diameter Clear Hole Spacers
    Large Diameter Clear Hole Spacers
    RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
  • WE-ExB Series Common Mode Power Line Choke
    WE-ExB Series Common Mode Power Line Choke
    Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
  • CPI2-B1-REU Production Device Programmer
    CPI2-B1-REU Production Device Programmer
    Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
  • CFSH05-20L Schottky Diode
    CFSH05-20L Schottky Diode
    Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.
More Newest Products
Top