A2T08VD020NT1

A2T08VD020NT1
Mfr. #:
A2T08VD020NT1
Hersteller:
NXP / Freescale
Beschreibung:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 720-960 MHz, 2 W Avg., 48 V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
A2T08VD020NT1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
Polarität des Transistors:
N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
64 mA
Vds - Drain-Source-Durchbruchspannung:
- 500 mV, 105 V
Gewinnen:
19.1 dB
Ausgangsleistung:
2 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
PQFN-24
Verpackung:
Spule
Arbeitsfrequenz:
728 MHz to 960 MHz
Typ:
HF-Leistungs-MOSFET
Marke:
NXP / Freescale
Anzahl der Kanäle:
2 Channel
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
- 6 V, 10 V
Vgs th - Gate-Source-Schwellenspannung:
1.8 V
Teil # Aliase:
935322283528
Gewichtseinheit:
0.014095 oz
Tags
A2T0, A2T
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
A2T08VD020NT1
DISTI # A2T08VD020NT1-ND
NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTO
RoHS: Not compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$23.8167
A2T08VD020NT1
DISTI # A2T08VD020NT1
NXP SemiconductorsRF Power LDMOS Tramsistor 728-960MHz 2W 48V Airfast - Tape and Reel (Alt: A2T08VD020NT1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$26.0900
  • 2000:$24.9900
  • 4000:$24.0900
  • 6000:$23.1900
  • 10000:$22.6900
A2T08VD020NT1
DISTI # 841-A2T08VD020NT1
NXP SemiconductorsRF MOSFET Transistors Airfast RF Power LDMOS Transistor, 720-960 MHz, 2 W Avg., 48 V
RoHS: Compliant
0
  • 1000:$24.1800
A2T08VD020NT1
DISTI # A2T08VD020NT1
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
0
  • 1000:$30.4500
Bild Teil # Beschreibung
A2T08VD020NT1

Mfr.#: A2T08VD020NT1

OMO.#: OMO-A2T08VD020NT1

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 720-960 MHz, 2 W Avg., 48 V
A2T08VD021NT1

Mfr.#: A2T08VD021NT1

OMO.#: OMO-A2T08VD021NT1

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 728 960 MHz, 2 W Avg., 48 V
A2T08VD020NT1

Mfr.#: A2T08VD020NT1

OMO.#: OMO-A2T08VD020NT1-NXP-SEMICONDUCTORS

AIRFAST RF POWER LDMOS TRANSISTO
A2T08VD021NT1

Mfr.#: A2T08VD021NT1

OMO.#: OMO-A2T08VD021NT1-NXP-SEMICONDUCTORS

AF3IC 800MHZ 20W PQFN8X8
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von A2T08VD020NT1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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