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IXTP3N60P

IXTP3N60P
Mfr. #:
IXTP3N60P
Hersteller:
IXYS
Beschreibung:
IGBT Transistors MOSFET 3 Amps 600V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTP3N60P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
IXTP3N60
Verpackung
Rohr
Gewichtseinheit
0.081130 oz
Montageart
Durchgangsloch
Handelsname
PolarHV
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
70 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
22 ns
Anstiegszeit
25 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
3 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
5.5 V
Rds-On-Drain-Source-Widerstand
2.9 Ohms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
58 ns
Typische-Einschaltverzögerungszeit
25 ns
Qg-Gate-Ladung
9.8 nC
Vorwärts-Transkonduktanz-Min
2.2 S
Kanal-Modus
Erweiterung
Tags
IXTP3N, IXTP3, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
IXTP3N60P
DISTI # IXTP3N60P-ND		IXYS CorporationMOSFET N-CH 600V 3A TO-220
RoHS: Compliant
Min Qty: 50
Container: Tube		Limited Supply - Call
    IXTP3N60P
    DISTI # 58M7664    		IXYS CorporationMOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:3A,Drain Source Voltage Vds:600V,On Resistance Rds(on):2.9ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,Power Dissipation Pd:70W,MSL:- RoHS Compliant: Yes0
      IXTP3N60P
      DISTI # 747-IXTP3N60P      		IXYS CorporationMOSFET 3 Amps 600V
      RoHS: Compliant      		14
      • 1:$1.5700
      • 10:$1.4200
      • 25:$1.2300
      • 50:$1.1600
      • 100:$1.1400
      • 250:$0.9240
      • 500:$0.8860
      • 1000:$0.7340
      • 2500:$0.6160
      IXTP3N60PIXYS Corporation3 A, 600 V, 2.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB65
      • 53:$1.0725
      • 15:$1.4300
      • 1:$2.1450
      IXTP3N60P
      DISTI # 1427370      		IXYS CorporationMOSFET, N, TO-220
      RoHS: Compliant      		0
      • 1000:$1.1400
      • 500:$1.3700
      • 250:$1.4200
      • 100:$1.7600
      • 50:$1.7900
      • 25:$1.8900
      • 5:$2.1900
      IXTP3N60P
      DISTI # 1427370      		IXYS CorporationMOSFET, N, TO-2200
      • 500:£0.6760
      • 250:£0.7050
      • 100:£0.8700
      • 10:£0.9370
      • 1:£1.3700
      IXTP3N60PIXYS Corporation 
      RoHS: Not Compliant      		400
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        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5500
        Menge eingeben:
        Der aktuelle Preis von IXTP3N60P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
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        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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