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IPB019N08N3GATMA1

IPB019N08N3GATMA1
Mfr. #:
IPB019N08N3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB019N08N3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB019N08N3GATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-7
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
180 A
Rds On - Drain-Source-Widerstand:
1.6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
206 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
300 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
103 S
Abfallzeit:
33 ns
Produktart:
MOSFET
Anstiegszeit:
73 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
86 ns
Typische Einschaltverzögerungszeit:
28 ns
Teil # Aliase:
G IPB019N08N3 IPB19N8N3GXT SP000444110
Gewichtseinheit:
0.056438 oz
Tags
IPB019N08N3G, IPB019N08N3, IPB019N08, IPB019, IPB01, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R / OptiMOS3 Power-transistor
***ure Electronics
Single N-Channel 80 V 1.9 mOhm 155 nC OptiMOS™ Power Mosfet - D2PAK-7
***ment14 APAC
MOSFET, N CH, 180A, 80V, PG-TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:80V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Current Id Max:180A; Power Dissipation Pd:300W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
Teil # Mfg. Beschreibung Aktie Preis
IPB019N08N3GATMA1
DISTI # V36:1790_06377108		Infineon Technologies AGTrans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$2.9950
  • 500000:$2.9980
  • 100000:$3.2560
  • 10000:$3.7050
  • 1000:$3.7790
IPB019N08N3GATMA1
DISTI # V72:2272_06377108		Infineon Technologies AGTrans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB019N08N3GATMA1
    DISTI # IPB019N08N3GATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 80V 180A TO263-7
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		905In Stock
    • 500:$3.8464
    • 100:$4.5184
    • 10:$5.5150
    • 1:$6.1400
    IPB019N08N3GATMA1
    DISTI # IPB019N08N3GATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 80V 180A TO263-7
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		905In Stock
    • 500:$3.8464
    • 100:$4.5184
    • 10:$5.5150
    • 1:$6.1400
    IPB019N08N3GATMA1
    DISTI # IPB019N08N3GATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 80V 180A TO263-7
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		On Order
    • 2000:$2.9920
    • 1000:$3.1495
    IPB019N08N3GATMA1
    DISTI # SP000444110    		Infineon Technologies AGTrans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R (Alt: SP000444110)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Europe - 0
    • 10000:€2.3900
    • 6000:€2.5900
    • 4000:€2.7900
    • 2000:€2.8900
    • 1000:€2.9900
    IPB019N08N3GXT
    DISTI # IPB019N08N3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 80V 180A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB019N08N3GATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 6000:$2.6900
    • 10000:$2.6900
    • 4000:$2.7900
    • 2000:$2.8900
    • 1000:$2.9900
    IPB019N08N3GATMA1
    DISTI # 60R2644    		Infineon Technologies AGMOSFET, N CHANNEL, 80V, 180A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
    • 500:$3.5900
    • 250:$4.0000
    • 100:$4.2100
    • 50:$4.4300
    • 25:$4.6500
    • 10:$4.8700
    • 1:$5.7300
    IPB019N08N3 G
    DISTI # 726-IPB019N08N3G    		Infineon Technologies AGMOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
    RoHS: Compliant    		783
    • 1:$5.6700
    • 10:$4.8200
    • 100:$4.1700
    • 250:$3.9600
    • 500:$3.5500
    • 1000:$3.0000
    • 2000:$2.8500
    IPB019N08N3GATMA1
    DISTI # 726-IPB019N08N3GATMA    		Infineon Technologies AGMOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
    RoHS: Compliant    		0
    • 1:$5.6700
    • 10:$4.8200
    • 100:$4.1700
    • 250:$3.9600
    • 500:$3.5500
    • 1000:$3.0000
    IPB019N08N3GATMA1
    DISTI # 1775520    		Infineon Technologies AGMOSFET, N CH, 180A, 80V, PG-TO263-7
    RoHS: Compliant    		54
    • 1000:$4.5200
    • 500:$5.3500
    • 250:$5.9700
    • 100:$6.2800
    • 10:$7.2600
    • 1:$8.5400
    IPB019N08N3GATMA1
    DISTI # 1775520    		Infineon Technologies AGMOSFET, N CH, 180A, 80V, PG-TO263-7710
    • 100:£3.7800
    • 10:£4.3700
    • 1:£5.6800
    Bild Teil # Beschreibung
    IPB019N08N3 G

    Mfr.#: IPB019N08N3 G

    OMO.#: OMO-IPB019N08N3-G

    		 MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
    IPB019N06L3 G

    Mfr.#: IPB019N06L3 G

    OMO.#: OMO-IPB019N06L3-G

    		 MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
    IPB019N08N3GATMA1

    Mfr.#: IPB019N08N3GATMA1

    OMO.#: OMO-IPB019N08N3GATMA1

    		 MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
    IPB019N08N5ATMA1

    Mfr.#: IPB019N08N5ATMA1

    OMO.#: OMO-IPB019N08N5ATMA1

    		 MOSFET DIFFERENTIATED MOSFETS
    IPB019N08N5ATMA1

    Mfr.#: IPB019N08N5ATMA1

    OMO.#: OMO-IPB019N08N5ATMA1-1190

    		 DIFFERENTIATED MOSFETS
    IPB019N06L

    Mfr.#: IPB019N06L

    OMO.#: OMO-IPB019N06L-1190

    		 Neu und Original
    IPB019N06L3G

    Mfr.#: IPB019N06L3G

    OMO.#: OMO-IPB019N06L3G-1190

    		 Neu und Original
    IPB019N08N

    Mfr.#: IPB019N08N

    OMO.#: OMO-IPB019N08N-1190

    		 Neu und Original
    IPB019N08N3

    Mfr.#: IPB019N08N3

    OMO.#: OMO-IPB019N08N3-1190

    		 Neu und Original
    IPB019N08N3GATMA1

    Mfr.#: IPB019N08N3GATMA1

    OMO.#: OMO-IPB019N08N3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 80V 180A TO263-7
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von IPB019N08N3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    5,67 $
    5,67 $
    10
    4,82 $
    48,20 $
    100
    4,17 $
    417,00 $
    250
    3,96 $
    990,00 $
    500
    3,55 $
    1 775,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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