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IRF6629TRPBF

IRF6629TRPBF
Mfr. #:
IRF6629TRPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 25V 1 N-CH HEXFET 2.1mOhms 34nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF6629TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6629TRPBF DatasheetIRF6629TRPBF Datasheet (P4-P6)IRF6629TRPBF Datasheet (P7-P9)IRF6629TRPBF Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
DirectFET-MX
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
25 V
Id - Kontinuierlicher Drainstrom:
29 A
Rds On - Drain-Source-Widerstand:
2.1 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
34 nC
Pd - Verlustleistung:
100 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
0.7 mm
Länge:
6.35 mm
Transistortyp:
1 N-Channel
Breite:
5.05 mm
Marke:
Infineon / IR
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Werkspackungsmenge:
4800
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001526802
Tags
IRF6629, IRF662, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
A 25V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET MX PACKAGE RATED AT 18
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):2.1mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MX ;RoHS Compliant: Yes
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number
Teil # Mfg. Beschreibung Aktie Preis
IRF6629TRPBF
DISTI # IRF6629TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 25V 29A DIRECTFET
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6629TRPBF
    DISTI # IRF6629TRPBFCT-ND    		Infineon Technologies AGMOSFET N-CH 25V 29A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6629TRPBF
      DISTI # IRF6629TRPBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 25V 29A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6629TRPBF
        DISTI # 70019571        		Infineon Technologies AGA 25V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET MX PACKAGE RATED AT 18
        RoHS: Compliant        		0
        • 4800:$3.2800
        • 9600:$3.2140
        • 24000:$3.1160
        • 48000:$2.9850
        • 120000:$2.7880
        IRF6629TRPBF
        DISTI # 942-IRF6629TRPBF        		Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 2.1mOhms 34nC
        RoHS: Compliant        		0
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          OMO.#: OMO-IRF6629TRPBF-INFINEON-TECHNOLOGIES

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          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          4000
          Menge eingeben:
          Der aktuelle Preis von IRF6629TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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