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IPP60R170CFD7XKSA1

IPP60R170CFD7XKSA1
Mfr. #:
IPP60R170CFD7XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET HIGH POWER_NEW
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPP60R170CFD7XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPP60R170CFD7XKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
14 A
Rds On - Drain-Source-Widerstand:
144 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
28 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
75 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Serie:
CoolMOS CFD7
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
9 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
68 ns
Typische Einschaltverzögerungszeit:
31 ns
Teil # Aliase:
IPP60R170CFD7 SP001617974
Tags
IPP60R1, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor High Power 170mΩ 75W 600V PG-TO 220-3
***ark
Mosfet, N-Ch, 600V, 14A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.144Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPP60R170CFD7XKSA1
DISTI # V36:1790_18787591		Infineon Technologies AGHIGH POWER_NEW0
    IPP60R170CFD7XKSA1
    DISTI # V99:2348_18787591    		Infineon Technologies AGHIGH POWER_NEW0
      IPP60R170CFD7XKSA1
      DISTI # IPP60R170CFD7XKSA1-ND      		Infineon Technologies AGMOSFET N-CH TO220-3
      RoHS: Compliant
      Min Qty: 1
      Container: Tube      		1856In Stock
      • 5000:$1.3707
      • 2500:$1.3879
      • 500:$1.7991
      • 100:$2.1898
      • 25:$2.5700
      • 10:$2.7240
      • 1:$3.0300
      IPP60R170CFD7XKSA1
      DISTI # IPP60R170CFD7XKSA1      		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 170mΩ 75W 600V PG-TO 220-3 - Rail/Tube (Alt: IPP60R170CFD7XKSA1)
      RoHS: Compliant
      Min Qty: 500
      Container: Tube      		Americas - 0
      • 3000:$1.1900
      • 5000:$1.1900
      • 1000:$1.2900
      • 2000:$1.2900
      • 500:$1.3900
      IPP60R170CFD7XKSA1
      DISTI # 43AC9327      		Infineon Technologies AGMOSFET, N-CH, 600V, 14A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.144ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes0
      • 5000:$1.4500
      • 2500:$1.4900
      • 1000:$1.5800
      • 500:$1.8700
      • 100:$2.1000
      • 10:$2.5700
      • 1:$2.9900
      IPP60R170CFD7XKSA1
      DISTI # 726-IPP60R170CFD7XKS      		Infineon Technologies AGMOSFET HIGH POWER_NEW
      RoHS: Compliant      		500
      • 1:$2.8800
      • 10:$2.4400
      • 100:$1.9500
      • 500:$1.7100
      • 1000:$1.4200
      IPP60R170CFD7XKSA1
      DISTI # 2807979      		Infineon Technologies AGMOSFET, N-CH, 600V, 14A, TO-220
      RoHS: Compliant      		960
      • 1000:$1.9600
      • 500:$2.0100
      • 250:$2.1100
      • 100:$2.2300
      • 10:$2.5300
      • 1:$2.7000
      IPP60R170CFD7XKSA1
      DISTI # 2807979      		Infineon Technologies AGMOSFET, N-CH, 600V, 14A, TO-220960
      • 500:£1.2400
      • 250:£1.3400
      • 100:£1.4300
      • 10:£1.7900
      • 1:£2.3800
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      Verfügbarkeit
      Aktie:
      430
      Auf Bestellung:
      2413
      Menge eingeben:
      Der aktuelle Preis von IPP60R170CFD7XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,88 $
      2,88 $
      10
      2,44 $
      24,40 $
      100
      1,95 $
      195,00 $
      500
      1,71 $
      855,00 $
      1000
      1,42 $
      1 420,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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