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SI3585CDV-T1-GE3

SI3585CDV-T1-GE3
Mfr. #:
SI3585CDV-T1-GE3
Hersteller:
Vishay
Beschreibung:
Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI3585CDV-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI3585CDV-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
FETs - Arrays
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SI3585CDV-GE3
Gewichtseinheit
0.000705 oz
Montageart
SMD/SMT
Paket-Koffer
SOT-23-6 Thin, TSOT-23-6
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
6-TSOP
Aufbau
1 N-Channel 1 P-Channel
FET-Typ
N- und P-Kanal
Leistung max
1.4W, 1.3W
Transistor-Typ
1 N-Channel 1 P-Channel
Drain-zu-Source-Spannung-Vdss
20V
Eingangskapazität-Ciss-Vds
150pF @ 10V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
3.9A, 2.1A
Rds-On-Max-Id-Vgs
58 mOhm @ 2.5A, 4.5V
Vgs-th-Max-Id
1.5V @ 250μA
Gate-Lade-Qg-Vgs
4.8nC @ 10V
Pd-Verlustleistung
1.4 W 1.3 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
8 ns 7 ns
Anstiegszeit
20 ns 10 ns
Vgs-Gate-Source-Spannung
12 V
ID-Dauer-Drain-Strom
3.9 A - 2.1 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Vgs-th-Gate-Source-Threshold-Voltage
1.5 V - 1.5 V
Rds-On-Drain-Source-Widerstand
58 mOhms 195 mOhms
Transistor-Polarität
N-Kanal P-Kanal
Typische-Ausschaltverzögerungszeit
11 ns 13 ns
Typische-Einschaltverzögerungszeit
5 ns 3 ns
Qg-Gate-Ladung
3.2 nC 6 nC
Vorwärts-Transkonduktanz-Min
12 S 1 S
Tags
SI3585CDV-T, SI3585C, SI3585, SI358, SI35, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
Teil # Mfg. Beschreibung Aktie Preis
SI3585CDV-T1-GE3
DISTI # V72:2272_09216703		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R
RoHS: Compliant		3000
  • 3000:$0.1576
  • 1000:$0.1751
  • 500:$0.2161
  • 250:$0.2476
  • 100:$0.2503
  • 25:$0.3124
  • 10:$0.3163
  • 1:$0.3860
SI3585CDV-T1-GE3
DISTI # SI3585CDV-T1-GE3CT-ND		Vishay SiliconixMOSFET N/P-CH 20V 3.9A 6TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		12000In Stock
  • 1000:$0.2311
  • 500:$0.2991
  • 100:$0.4079
  • 10:$0.5440
  • 1:$0.6500
SI3585CDV-T1-GE3
DISTI # SI3585CDV-T1-GE3DKR-ND		Vishay SiliconixMOSFET N/P-CH 20V 3.9A 6TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		12000In Stock
  • 1000:$0.2311
  • 500:$0.2991
  • 100:$0.4079
  • 10:$0.5440
  • 1:$0.6500
SI3585CDV-T1-GE3
DISTI # SI3585CDV-T1-GE3TR-ND		Vishay SiliconixMOSFET N/P-CH 20V 3.9A 6TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		9000In Stock
  • 3000:$0.2046
SI3585CDV-T1-GE3
DISTI # 31154779		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R
RoHS: Compliant		3000
  • 3000:$0.1576
  • 1000:$0.1751
  • 500:$0.2161
  • 250:$0.2476
  • 100:$0.2503
  • 48:$0.3124
SI3585CDV-T1-GE3
DISTI # SI3585CDV-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V/20V 3.5A/1.9A 6-Pin TSOP T/R (Alt: SI3585CDV-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI3585CDV-T1-GE3
    DISTI # SI3585CDV-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V/20V 3.5A/1.9A 6-Pin TSOP T/R (Alt: SI3585CDV-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 3000:€0.3089
    • 6000:€0.2109
    • 12000:€0.1809
    • 18000:€0.1669
    • 30000:€0.1559
    SI3585CDV-T1-GE3
    DISTI # SI3585CDV-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V/20V 3.5A/1.9A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3585CDV-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.1609
    • 6000:$0.1559
    • 12000:$0.1499
    • 18000:$0.1459
    • 30000:$0.1419
    SI3585CDV-T1-GE3
    DISTI # 70AC6501    		Vishay Intertechnologies 0
    • 1:$0.6500
    • 25:$0.5440
    • 50:$0.4760
    • 100:$0.4070
    • 250:$0.3530
    • 500:$0.2990
    • 1000:$0.2310
    SI3585CDV-T1-GE3
    DISTI # 99W9612    		Vishay IntertechnologiesDual MOSFET, N and P Channel, 3.9 A, 20 V, 0.048 ohm, 4.5 V, 1.5 V0
    • 1:$0.1760
    • 3000:$0.1740
    • 6000:$0.1660
    SI3585CDV-T1-GE3
    DISTI # 78-SI3585CDV-T1-GE3    		Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR
    RoHS: Compliant    		378
    • 1:$0.5700
    • 10:$0.4340
    • 100:$0.3220
    • 500:$0.2650
    • 1000:$0.2050
    • 3000:$0.2000
    SI3585CDV-T1-GE3
    DISTI # 2454805RL    		Vishay IntertechnologiesMOSFET, N/P-CH, 20V, 3.9A, TSOP-6
    RoHS: Compliant    		0
    • 1:$0.9020
    • 10:$0.6870
    • 100:$0.5100
    • 500:$0.4190
    • 1000:$0.3250
    • 3000:$0.2940
    • 6000:$0.2810
    SI3585CDV-T1-GE3
    DISTI # 2454805    		Vishay IntertechnologiesMOSFET, N/P-CH, 20V, 3.9A, TSOP-6
    RoHS: Compliant    		0
    • 1:$0.9020
    • 10:$0.6870
    • 100:$0.5100
    • 500:$0.4190
    • 1000:$0.3250
    • 3000:$0.2940
    • 6000:$0.2810
    SI3585CDV-T1-GE3
    DISTI # 2454805    		Vishay IntertechnologiesMOSFET, N/P-CH, 20V, 3.9A, TSOP-6
    RoHS: Compliant    		0
    • 5:£0.4650
    • 25:£0.4380
    • 100:£0.3050
    SI3585CDV-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR
    RoHS: Compliant    		Americas -
    • 3000:$0.1570
    • 6000:$0.1480
    • 12000:$0.1440
    • 24000:$0.1420
    Bild Teil # Beschreibung
    SI3585CDV-T1-GE3

    Mfr.#: SI3585CDV-T1-GE3

    OMO.#: OMO-SI3585CDV-T1-GE3

    		 MOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR
    SI3585CDV

    Mfr.#: SI3585CDV

    OMO.#: OMO-SI3585CDV-1190

    		 Neu und Original
    SI3585CDV-T1-E3

    Mfr.#: SI3585CDV-T1-E3

    OMO.#: OMO-SI3585CDV-T1-E3-1190

    		 Neu und Original
    SI3585CDV-T1-GE3-CUT TAPE

    Mfr.#: SI3585CDV-T1-GE3-CUT TAPE

    OMO.#: OMO-SI3585CDV-T1-GE3-CUT-TAPE-1190

    		 Neu und Original
    SI3585CDV-T1-GE3

    Mfr.#: SI3585CDV-T1-GE3

    OMO.#: OMO-SI3585CDV-T1-GE3-VISHAY

    		 Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4500
    Menge eingeben:
    Der aktuelle Preis von SI3585CDV-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,19 $
    0,19 $
    10
    0,18 $
    1,80 $
    100
    0,17 $
    17,01 $
    500
    0,16 $
    80,35 $
    1000
    0,15 $
    151,20 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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