NE6510179A-A

NE6510179A-A
Mfr. #:
NE6510179A-A
Hersteller:
CEL
Beschreibung:
RF JFET Transistors L&S Band GaAs HJFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NE6510179A-A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NE6510179A-A DatasheetNE6510179A-A Datasheet (P4-P6)NE6510179A-A Datasheet (P7-P9)NE6510179A-A Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
CEL
Produktkategorie:
HF-JFET-Transistoren
RoHS:
Y
Transistortyp:
HFET
Technologie:
GaAs
Gewinnen:
10 dB
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
8 V
Vgs - Gate-Source-Durchbruchspannung:
- 4 V
Id - Kontinuierlicher Drainstrom:
2.8 A
Ausgangsleistung:
35 dBm
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
15 W
Montageart:
SMD/SMT
Paket / Koffer:
79A
Verpackung:
Schüttgut
Arbeitsfrequenz:
1.9 GHz
Produkt:
HF-JFET
Typ:
GaAs HFET
Marke:
CEL
P1dB - Kompressionspunkt:
35 dBm
Produktart:
HF-JFET-Transistoren
Unterkategorie:
Transistoren
Tags
NE6510, NE651, NE65, NE6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
Discrete Power Devices L&S; Band GaAs HJFET
***i-Key
HJ-FET GAAS 1.9GHZ 3W 79A
Teil # Mfg. Beschreibung Aktie Preis
NE6510179A-A
DISTI # NE6510179A-A-ND
California Eastern Laboratories (CEL)FET RF 8V 1.9GHZ 79A
RoHS: Compliant
Min Qty: 20
Container: Bulk
Limited Supply - Call
    NE6510179A
    DISTI # 551-NE6510179A
    NEC Electronics GroupRF JFET Transistors L&S Band GaAs HJFET
    RoHS: Not compliant
    0
      NE6510179A-A
      DISTI # 551-NE6510179A-A
      California Eastern Laboratories (CEL)RF JFET Transistors L&S Band GaAs HJFET
      RoHS: Compliant
      0
        Bild Teil # Beschreibung
        NE6510179A-EVPW19

        Mfr.#: NE6510179A-EVPW19

        OMO.#: OMO-NE6510179A-EVPW19

        RF Development Tools For NE6510179A-A Power at 1.9 GHz
        NE6510179A-EVPW26

        Mfr.#: NE6510179A-EVPW26

        OMO.#: OMO-NE6510179A-EVPW26

        RF Development Tools For NE6510179A-A Power at 2.6 GHz
        NE6510179A-A

        Mfr.#: NE6510179A-A

        OMO.#: OMO-NE6510179A-A

        RF JFET Transistors L&S Band GaAs HJFET
        NE6510179A

        Mfr.#: NE6510179A

        OMO.#: OMO-NE6510179A-1152

        RF JFET Transistors L&S Band GaAs HJFET
        NE6510179A , EM6323LXSP5

        Mfr.#: NE6510179A , EM6323LXSP5

        OMO.#: OMO-NE6510179A-EM6323LXSP5-1190

        Neu und Original
        NE6510179A-A

        Mfr.#: NE6510179A-A

        OMO.#: OMO-NE6510179A-A-CEL

        FET RF 8V 1.9GHZ 79A
        NE6510179A-T

        Mfr.#: NE6510179A-T

        OMO.#: OMO-NE6510179A-T-1190

        Neu und Original
        NE6510179A-T1

        Mfr.#: NE6510179A-T1

        OMO.#: OMO-NE6510179A-T1-1190

        Neu und Original
        NE6510179A-T1-AK

        Mfr.#: NE6510179A-T1-AK

        OMO.#: OMO-NE6510179A-T1-AK-1190

        Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        2500
        Menge eingeben:
        Der aktuelle Preis von NE6510179A-A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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