PartNumber | NE6510179A-EVPW19 | NE6510179A-EVPW26 | NE6510179A-A |
Description | RF Development Tools For NE6510179A-A Power at 1.9 GHz | RF Development Tools For NE6510179A-A Power at 2.6 GHz | RF JFET Transistors L&S Band GaAs HJFET |
Manufacturer | CEL | CEL | CEL |
Product Category | RF Development Tools | RF Development Tools | RF JFET Transistors |
RoHS | N | N | Y |
Frequency | 1.9 GHz | 1.9 GHz | - |
Brand | CEL | CEL | CEL |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Product Type | RF Development Tools | RF Development Tools | RF JFET Transistors |
Subcategory | Development Tools | Development Tools | Transistors |
Transistor Type | - | - | HFET |
Technology | - | - | GaAs |
Gain | - | - | 10 dB |
Transistor Polarity | - | - | N-Channel |
Vds Drain Source Breakdown Voltage | - | - | 8 V |
Vgs Gate Source Breakdown Voltage | - | - | - 4 V |
Id Continuous Drain Current | - | - | 2.8 A |
Output Power | - | - | 35 dBm |
Pd Power Dissipation | - | - | 15 W |
Mounting Style | - | - | SMD/SMT |
Package / Case | - | - | 79A |
Packaging | - | - | Bulk |
Operating Frequency | - | - | 1.9 GHz |
Product | - | - | RF JFET |
Type | - | - | GaAs HFET |
P1dB Compression Point | - | - | 35 dBm |