NE651

NE6510179A-EVPW19 vs NE6510179A-EVPW26 vs NE6510179A-A

 
PartNumberNE6510179A-EVPW19NE6510179A-EVPW26NE6510179A-A
DescriptionRF Development Tools For NE6510179A-A Power at 1.9 GHzRF Development Tools For NE6510179A-A Power at 2.6 GHzRF JFET Transistors L&S Band GaAs HJFET
ManufacturerCELCELCEL
Product CategoryRF Development ToolsRF Development ToolsRF JFET Transistors
RoHSNNY
Frequency1.9 GHz1.9 GHz-
BrandCELCELCEL
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Product TypeRF Development ToolsRF Development ToolsRF JFET Transistors
SubcategoryDevelopment ToolsDevelopment ToolsTransistors
Transistor Type--HFET
Technology--GaAs
Gain--10 dB
Transistor Polarity--N-Channel
Vds Drain Source Breakdown Voltage--8 V
Vgs Gate Source Breakdown Voltage--- 4 V
Id Continuous Drain Current--2.8 A
Output Power--35 dBm
Pd Power Dissipation--15 W
Mounting Style--SMD/SMT
Package / Case--79A
Packaging--Bulk
Operating Frequency--1.9 GHz
Product--RF JFET
Type--GaAs HFET
P1dB Compression Point--35 dBm
Hersteller Teil # Beschreibung RFQ
CEL
CEL
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