TH58BVG2S3HTAI0

TH58BVG2S3HTAI0
Mfr. #:
TH58BVG2S3HTAI0
Hersteller:
Toshiba Memory
Beschreibung:
EEPROM 4 Gbit CMOS NAND EEPROM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
TH58BVG2S3HTAI0 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
TH58BVG2S3HTAI0 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Toshiba Halbleiter und Speicher
Produktkategorie
Erinnerung
Serie
Benand
Verpackung
Tablett
Montageart
SMD/SMT
Paket-Koffer
TSOP-48
Betriebstemperatur
-40°C ~ 85°C (TA)
Schnittstelle
Parallel
Spannungsversorgung
2.7 V ~ 3.6 V
Lieferanten-Geräte-Paket
48-TSOP I
Speichergröße
4G (512M x 8)
Speichertyp
EEPROM - NAND
Geschwindigkeit
25ns
Zugriffszeit
25 ns
Format-Speicher
EEPROMs - Seriell
Maximale-Betriebstemperatur
+ 85 C
Mindest-Betriebstemperatur
- 40 C
Betriebs-Versorgungsspannung
3.3 V
Oberflächentyp
Parallel
Organisation
512 M x 8
Versorgungsspannung-Max
3.6 V
Versorgungsspannung-Min
2.7 V
Tags
TH58BVG2S3HTAI, TH58BVG2S3HT, TH58BVG2, TH58BV, TH58B, TH58, TH5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**h
    E**h
    ES

    All good

    2019-05-05
    M***d
    M***d
    US

    There is excessive leakage current on the Boot0 pin of the STM32 chip, so module would not enter serial boot mode. Changed R3 from 100k to 10k and now serial boot is working. Both modules had the same problem. Everything else functioning OK so far.

    2019-08-01
***et
SLC NAND Flash Parallel 3.3V 4Gbit 512M X 8bit 25ns 48-Pin TSOP-I Tray
***ical
SLC NAND Flash 3.3V 4G-bit 48-Pin TSOP
***ronik
BENAND-Flash 512Mx8 3.3V TSOP48
***i-Key
IC FLASH 4G PARALLEL 48TSOP I
SLC NAND and BENAND
Toshiba SLC NAND and BENAND provide best-in-class endurance and data retention for sensitive or frequently used system data. Toshiba SLC are the optimal solution for long lasting products or systems working with extremely high data throughput between the host and the memory. 
Teil # Mfg. Beschreibung Aktie Preis
TH58BVG2S3HTAI0
DISTI # TH58BVG2S3HTAI0-ND
Toshiba Semiconductor and Storage ProductsIC FLASH 4G PARALLEL 48TSOP I
RoHS: Compliant
Min Qty: 1
Container: Tray
182In Stock
  • 1056:$4.5407
  • 576:$4.7425
  • 288:$5.0583
  • 192:$5.0778
  • 96:$5.6604
  • 25:$5.6996
  • 10:$5.8100
  • 1:$6.3700
TH58BVG2S3HTAI0
DISTI # TH58BVG2S3HTAI0
Toshiba America Electronic ComponentsSLC NAND Flash Parallel 3.3V 4Gbit 512M X 8bit 25ns 48-Pin TSOP-I Tray - Trays (Alt: TH58BVG2S3HTAI0)
RoHS: Compliant
Min Qty: 96
Container: Tray
Americas - 0
  • 96:$4.7900
  • 192:$4.6900
  • 384:$4.5900
  • 576:$4.5900
  • 960:$4.3900
TH58BVG2S3HTAI0
DISTI # 757-TH58BVG2S3HTAI0
Toshiba America Electronic ComponentsNAND Flash 4Gb 24nm I-Temp SLC NAND (EEPROM)
RoHS: Compliant
0
  • 1:$7.7500
  • 10:$6.9800
  • 25:$6.3600
  • 100:$5.7400
  • 250:$5.2800
  • 500:$4.8100
  • 1000:$4.1900
Bild Teil # Beschreibung
TH58BVG2S3HTAI0

Mfr.#: TH58BVG2S3HTAI0

OMO.#: OMO-TH58BVG2S3HTAI0

NAND Flash 4Gb 24nm I-Temp SLC NAND (EEPROM)
TH58BVG2S3HBAI6

Mfr.#: TH58BVG2S3HBAI6

OMO.#: OMO-TH58BVG2S3HBAI6

NAND Flash 4Gb 24nm SLC NAND (EEPROM)
TH58BVG2S3HTAI0

Mfr.#: TH58BVG2S3HTAI0

OMO.#: OMO-TH58BVG2S3HTAI0-TOSHIBA-MEMORY-AMERICA

EEPROM 4 Gbit CMOS NAND EEPROM
TH58BVG2S3HTA00

Mfr.#: TH58BVG2S3HTA00

OMO.#: OMO-TH58BVG2S3HTA00-TOSHIBA-MEMORY-AMERICA

EEPROM 4 Gbit CMOS NAND EEPROM
TH58BVG3S0HTAI0

Mfr.#: TH58BVG3S0HTAI0

OMO.#: OMO-TH58BVG3S0HTAI0-TOSHIBA-MEMORY-AMERICA

Flash Memory 8 GBIT CMOS NAND EEPROM
TH58BVG3S0HTAI0B4H

Mfr.#: TH58BVG3S0HTAI0B4H

OMO.#: OMO-TH58BVG3S0HTAI0B4H-1190

TOSTH58BVG3S0HTAI0B4H 8 GBIT (1G × 8 BIT (Alt: TH58BVG3S0HTAI0B4H)
TH58BVG2S3HTA00(B4H)

Mfr.#: TH58BVG2S3HTA00(B4H)

OMO.#: OMO-TH58BVG2S3HTA00-B4H--1190

Neu und Original
TH58BVG2S3HTA00_REEL

Mfr.#: TH58BVG2S3HTA00_REEL

OMO.#: OMO-TH58BVG2S3HTA00-REEL-1151

NAND Flash Memory (Alt: TH58BVG2S3HTA00_REEL)
TH58BVG3S0HBAI4

Mfr.#: TH58BVG3S0HBAI4

OMO.#: OMO-TH58BVG3S0HBAI4-1190

Neu und Original
TH58BVG2S3HTA00-ND

Mfr.#: TH58BVG2S3HTA00-ND

OMO.#: OMO-TH58BVG2S3HTA00-ND-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von TH58BVG2S3HTAI0 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
6,28 $
6,28 $
10
5,97 $
59,71 $
100
5,66 $
565,65 $
500
5,34 $
2 671,15 $
1000
5,03 $
5 028,00 $
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