FDMS2508SDC

Mfr. #:: FDMS2508SDC
Hersteller:: ON Semiconductor
Beschreibung:: IGBT Transistors MOSFET 25V N-Chan Dual Cool PowerTrench SyncFET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: FDMS2508SDC Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: FAIRCHILD

Produktkategorie: FETs - Einzeln

Tags: FDMS250, FDMS25, FDMS2, FDMS, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMS2508SDC Beschreibung

***ical: Trans MOSFET N-CH 25V 34A 8-Pin PQFN T/R

***ment14 APAC: N CH MOSFET, 25V, 34A, 8-PWR56; Transist; N CH MOSFET, 25V, 34A, 8-PWR56; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; No. of Pins:8

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.

***ponent Sense: MOSFET 25V 40A 2mOhm N-CH PowerTrench SyncFET

***r Electronics: Power Field-Effect Transistor, 27A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

***nell: MOSFET, N CH, 25V, 40A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: The FDMC7570S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

***et: Trans MOSFET N-CH 25V 39A 8-Pin PQFN T/R

***ment14 APAC: N CH MOSFET, 25V, 39A, 8-PWR56; Transist; N CH MOSFET, 25V, 39A, 8-PWR56; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; No. of Pins:8

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.

***ure Electronics: N-Channel 30 V 28 A 1.9 mO Surface Mount PowerTrench SyncFET Mosfet - Power 56

*** Stop Electro: Power Field-Effect Transistor, 29A I(D), 30V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***nell: MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

***ure Electronics: Single N-Channel 30 V 50 A 69 W 1.8 mOhm Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R

***ponent Sense: MOSFET 30V 50A 69W 2.5mohm @ 10V

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 33.3A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, N CH, 30V, 50A, PPAK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.05mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:69W; Voltage Vgs Max:20V

***ark: Mosfet Transistor, N Channel, 21 A, 25 V, 0.0063 Ohm, 10 V, 1.9 V

***ure Electronics: IRLR8259 Series 25 V 8.7 mOhm 6.8 nC Surface Mount HEXFET Power MOSFET - DPAK-3

***(Formerly Allied Electronics): MOSFET; 25V; 57A; 8.7MOHM; 6.8 NC QG; LOGIC LEVEL; D-PAK

*** Source Electronics: Trans MOSFET N-CH 25V 57A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 25V 57A DPAK

***ineon SCT: 25V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 42A I(D), 25V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N-CH 25V 57A DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0063ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Di

***ineon SCT: 25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

*** Source Electronics: Trans MOSFET N-CH 25V 44A 8-Pin PQFN EP T/R / MOSFET N-CH 25V 44A 8PQFN

***ineon: Benefits: Low RDS(ON) (less than 1.10 mOhms); Schottky Intrinsic Diode with Low Forward Voltage; Low Thermal Resistance to PCB (less than 1.0C/W); Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; RoHS Compliant, Halogen-Free; MSL1, Industrial Qualification; FastIRFET | Target Applications: MultiPhase SyncFET; Point of Load SyncFET

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
FDMS2508SDC DISTI # FDMS2508SDCTR-ND	ON Semiconductor	MOSFET N-CH 25V 34A POWER56 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
FDMS2508SDC DISTI # FDMS2508SDCCT-ND	ON Semiconductor	MOSFET N-CH 25V 34A POWER56 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDMS2508SDC DISTI # FDMS2508SDCDKR-ND	ON Semiconductor	MOSFET N-CH 25V 34A POWER56 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDMS2508SDC DISTI # FDMS2508SDC	ON Semiconductor	Trans MOSFET N-CH 25V 34A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS2508SDC) RoHS: Not Compliant Container: Reel	Americas - 0
FDMS2508SDC DISTI # 28T0536	ON Semiconductor	Trans MOSFET N-CH 25V 34A 8-Pin PQFN T/R - Product that comes on tape, but is not reeled (Alt: 28T0536) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.2941 10:$1.2857 25:$1.2774 50:$1.2692 100:$1.2532 500:$1.2375 1000:$1.2222
FDMS2508SDC DISTI # 28T0536	ON Semiconductor	N CHANNEL MOSFET, 25V, 34A, 8-PWR56,Transistor Polarity:N Channel,Continuous Drain Current Id:34A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes	0
FDMS2508SDC DISTI # 512-FDMS2508SDC	ON Semiconductor	MOSFET 25V N-Chan Dual Cool PowerTrench SyncFET RoHS: Compliant	0
FDMS2508SDC	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 34A I(D), 25V, 0.00195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA RoHS: Compliant	31736	1000:$1.3000 500:$1.3700 100:$1.4300 25:$1.4900 1:$1.6000
FDMS2508SDC DISTI # 1874024	ON Semiconductor	N CH MOSFET, 25V, 34A, 8-PWR56 RoHS: Compliant	0	3000:£1.2500
FDMS2508SDC DISTI # 1874024	ON Semiconductor	N CH MOSFET, 25V, 34A, 8-PWR56 RoHS: Compliant	0	1:$4.0200 10:$3.5000 100:$3.0400 250:$2.7300 500:$2.4000 1000:$2.1700 3000:$2.0400 6000:$1.9500

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: FDMS2572 OMO.#: OMO-FDMS2572	MOSFET LOW VOLTAGE
	Mfr.#: FDMS2504SDC OMO.#: OMO-FDMS2504SDC	MOSFET 25V N-Chan Dual Cool PowerTrench SyncFET
	Mfr.#: FDMS2510SDC OMO.#: OMO-FDMS2510SDC	MOSFET 20V N-Chan Dual Cool PowerTrench SyncFET
	Mfr.#: FDMS2380 OMO.#: OMO-FDMS2380	Gate Drivers Dual Integ Solenoid
	Mfr.#: FDMS2510SDC OMO.#: OMO-FDMS2510SDC-ON-SEMICONDUCTOR	IGBT Transistors MOSFET 20V N-Chan Dual Cool PowerTrench SyncFET
	Mfr.#: FDMS2504SDC OMO.#: OMO-FDMS2504SDC-ON-SEMICONDUCTOR	MOSFET 25V N-Chan Dual Cool PowerTrench SyncFET
	Mfr.#: FDMS2502SDC OMO.#: OMO-FDMS2502SDC-1190	Neu und Original
	Mfr.#: FDMS2572 OMO.#: OMO-FDMS2572-ON-SEMICONDUCTOR	MOSFET N-CH 150V 4.5A POWER56
	Mfr.#: FDMS2734 OMO.#: OMO-FDMS2734-ON-SEMICONDUCTOR	MOSFET N-CH 250V 2.8A POWER56
	Mfr.#: FDMS2D4N03S OMO.#: OMO-FDMS2D4N03S-ON-SEMICONDUCTOR	MOSFET N-CH 30V 163A 8PQFN

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1000
Menge eingeben:

Der aktuelle Preis von FDMS2508SDC dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,83 $~~; ~~1,83 $~~

10: ~~1,74 $~~; ~~17,42 $~~

100: ~~1,65 $~~; ~~165,00 $~~

500: ~~1,56 $~~; ~~779,15 $~~

1000: ~~1,47 $~~; ~~1 466,70 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

FDMS250 4
FDMS25 6
FDMS2 13
FDMS 328
FDM 847

FDMS2508SDC

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes