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FDB8160_F085

FDB8160_F085
Mfr. #:
FDB8160_F085
Hersteller:
Fairchild Semiconductor
Beschreibung:
IGBT Transistors MOSFET 30V N-Channel PowerTrench MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDB8160_F085 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Gewichtseinheit
0.046296 oz
Montageart
SMD/SMT
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
254 W
Abfallzeit
27 ns
Anstiegszeit
18.9 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
80 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Source-Threshold-Voltage
2.9 V
Rds-On-Drain-Source-Widerstand
1.5 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
187 nC
Tags
FDB816, FDB81, FDB8, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
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***emi
N-Channel PowerTrench® MOSFET 30V, 80A, 1.8mΩ
*** Stop Electro
Power Field-Effect Transistor, 80A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.1mΩ
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Power Field-Effect Transistor, 34A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***i-Key
MOSFET N-CH 30V 75A D2PAK
***Yang
TO-263AB,SINGLE,NCH,30V,0.0023 OHM LOGIC LEVEL DENSE TRENCH - Bulk
***nell
MOSFET, N, SMD, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipa
***emi
N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ
***ure Electronics
N-Channel 30 V 5.7 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB
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Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 30V, 93A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***ure Electronics
Single N-Channel 30 V 9 mOhm 27 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
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MOSFET, 30V, 90A, 9 mOhm, 27 nC Qg, D2-Pak
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Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
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Single N-Channel 30 V 6.3 mOhm 17 nC HEXFET® Power Mosfet - D2PAK
*** Source Electronics
Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 30V 87A D2PAK
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30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 47uF 10volts *Derate Voltage/Temp
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:87A; On Resistance, Rds(on):6.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
FDB8160-F085
DISTI # FDB8160-F085TR-ND		ON SemiconductorMOSFET N-CH 30V 80A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Limited Supply - Call
    FDB8160-F085
    DISTI # FDB8160-F085CT-ND    		ON SemiconductorMOSFET N-CH 30V 80A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      FDB8160-F085
      DISTI # FDB8160-F085DKR-ND      		ON SemiconductorMOSFET N-CH 30V 80A D2PAK
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        FDB8160_F085
        DISTI # FDB8160-F085        		ON SemiconductorTrans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: FDB8160-F085)
        Min Qty: 234
        Container: Bulk        		Americas - 0
        • 234:$1.2900
        • 468:$1.2900
        • 702:$1.2900
        • 1170:$1.2900
        • 2340:$1.2900
        FDB8160-F085
        DISTI # 48AC0890        		ON SemiconductorNMOS D2PAK 30V 1.8 MOHM / REEL0
          FDB8160-F085Fairchild Semiconductor CorporationPower Field-Effect Transistor, 80A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          RoHS: Compliant          		781
          • 1000:$1.4100
          • 500:$1.4800
          • 100:$1.5400
          • 25:$1.6100
          • 1:$1.7300
          Bild Teil # Beschreibung
          FDB8160-F085

          Mfr.#: FDB8160-F085

          OMO.#: OMO-FDB8160-F085

          		 MOSFET 30V N-Channel PowerTrench MOSFET
          FDB8160_F085

          Mfr.#: FDB8160_F085

          OMO.#: OMO-FDB8160-F085-126

          		 IGBT Transistors MOSFET 30V N-Channel PowerTrench MOSFET
          FDB8160

          Mfr.#: FDB8160

          OMO.#: OMO-FDB8160-ON-SEMICONDUCTOR

          		 MOSFET N-CH 30V 80A D2PAK
          FDB8160-F085

          Mfr.#: FDB8160-F085

          OMO.#: OMO-FDB8160-F085-ON-SEMICONDUCTOR

          		 MOSFET N-CH 30V 80A D2PAK
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          3000
          Menge eingeben:
          Der aktuelle Preis von FDB8160_F085 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          1,94 $
          1,94 $
          10
          1,84 $
          18,38 $
          100
          1,74 $
          174,15 $
          500
          1,64 $
          822,40 $
          1000
          1,55 $
          1 548,00 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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