IPB60R099C7ATMA1

Mfr. #:: IPB60R099C7ATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET HIGH POWER_NEW
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPB60R099C7ATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TO-263-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 600 V

Id - Kontinuierlicher Drainstrom:: 22 A

Rds On - Drain-Source-Widerstand:: 99 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 3 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 42 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 110 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: CoolMOS

Verpackung:: Spule

Höhe:: 4.4 mm

Länge:: 10 mm

Serie:: CoolMOS C7

Breite:: 9.25 mm

Marke:: Infineon-Technologien

Abfallzeit:: 4.5 ns

Produktart:: MOSFET

Anstiegszeit:: 8 ns

Werkspackungsmenge:: 1000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 54 ns

Typische Einschaltverzögerungszeit:: 11.8 ns

Teil # Aliase:: IPB60R099C7 SP001297998

Gewichtseinheit:: 0.139332 oz

Tags: IPB60R099C, IPB60R099, IPB60R09, IPB60R0, IPB60R, IPB60, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB60R099C7ATMA1 Beschreibung

***ical: Trans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK T/R

***ark: MOSFET, N-CH, 650V, 150DEG C, 110W ROHS COMPLIANT: YES

***ineon SCT: CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies, PG-TO263-3, RoHS

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPB60R099C7ATMA1 DISTI # 32680826	Infineon Technologies AG	Trans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK	1000	1000:$2.4693
IPB60R099C7ATMA1 DISTI # IPB60R099C7ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 650V 22A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	890In Stock	500:$3.5396 100:$4.1580 10:$5.0750 1:$5.6500
IPB60R099C7ATMA1 DISTI # IPB60R099C7ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 650V 22A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	890In Stock	500:$3.5396 100:$4.1580 10:$5.0750 1:$5.6500
IPB60R099C7ATMA1 DISTI # IPB60R099C7ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 650V 22A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$2.7533 1000:$2.8982
IPB60R099C7ATMA1 DISTI # V36:1790_13989137	Infineon Technologies AG	Trans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK	0	1000000:$2.3000 500000:$2.3020 100000:$2.4990 10000:$2.8340 1000:$2.8900
IPB60R099C7ATMA1 DISTI # IPB60R099C7ATMA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW - Tape and Reel (Alt: IPB60R099C7ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 1000	6000:$2.3900 10000:$2.3900 4000:$2.4900 2000:$2.5900 1000:$2.6900
IPB60R099C7ATMA1 DISTI # SP001297998	Infineon Technologies AG	MOSFET HIGH POWER_NEW (Alt: SP001297998) RoHS: Compliant Min Qty: 1000	Europe - 0	10000:€2.0900 6000:€2.2900 4000:€2.4900 2000:€2.5900 1000:€2.6900
IPB60R099C7ATMA1 DISTI # 726-IPB60R099C7ATMA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	983	1:$5.2100 10:$4.4300 100:$3.8400 250:$3.6400 500:$3.2700 1000:$2.7600 2000:$2.6200

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	Mfr.#: IPB60R120P7ATMA1 OMO.#: OMO-IPB60R120P7ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH TO263-3

Verfügbarkeit

Aktie:: 963
Auf Bestellung:: 2946
Menge eingeben:

Der aktuelle Preis von IPB60R099C7ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Beginnen mit

IPB60R099C 11
IPB60R099 13
IPB60R09 14
IPB60R0 24
IPB60R 100
IPB60 105
IPB6 183
IPB 1339

IPB60R099C7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes