PartNumber | IPB60R099C6 | IPB60R099C7ATMA1 | IPB60R099C6ATMA1 |
Description | MOSFET N-Ch 650V 38A D2PAK-2 CoolMOS C6 | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_LEGACY |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
Id Continuous Drain Current | 37.9 A | 22 A | - |
Rds On Drain Source Resistance | 99 mOhms | 99 mOhms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 119 nC | 42 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 278 W | 110 W | - |
Configuration | Single | Single | Single |
Tradename | CoolMOS | CoolMOS | CoolMOS |
Packaging | Reel | Reel | Reel |
Height | 4.4 mm | 4.4 mm | 4.4 mm |
Length | 10 mm | 10 mm | 10 mm |
Series | CoolMOS C6 | CoolMOS C7 | - |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 9.25 mm | 9.25 mm | 9.25 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 6 ns | 4.5 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 12 ns | 8 ns | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 75 ns | 54 ns | - |
Typical Turn On Delay Time | 15 ns | 11.8 ns | - |
Part # Aliases | IPB60R099C6ATMA1 IPB6R99C6XT SP000687468 | IPB60R099C7 SP001297998 | IPB60R099C6 IPB6R99C6XT SP000687468 |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Vgs th Gate Source Threshold Voltage | - | 3 V | - |
Channel Mode | - | Enhancement | - |