IPB60R099C7ATMA1

IPB60R099C7ATMA1
Mfr. #:
IPB60R099C7ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 650V 22A TO263-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB60R099C7ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Teil-Aliasnamen
IPB60R099C7 SP001297998
Paket-Koffer
TO-263-3
Technologie
Si
Tags
IPB60R099C, IPB60R099, IPB60R09, IPB60R0, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK T/R
***ark
MOSFET, N-CH, 650V, 150DEG C, 110W ROHS COMPLIANT: YES
***ineon SCT
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies, PG-TO263-3, RoHS
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
Teil # Mfg. Beschreibung Aktie Preis
IPB60R099C7ATMA1
DISTI # 32680826
Infineon Technologies AGTrans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK1000
  • 1000:$2.4693
IPB60R099C7ATMA1
DISTI # IPB60R099C7ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 650V 22A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
890In Stock
  • 500:$3.5396
  • 100:$4.1580
  • 10:$5.0750
  • 1:$5.6500
IPB60R099C7ATMA1
DISTI # IPB60R099C7ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 650V 22A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
890In Stock
  • 500:$3.5396
  • 100:$4.1580
  • 10:$5.0750
  • 1:$5.6500
IPB60R099C7ATMA1
DISTI # IPB60R099C7ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 650V 22A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2000:$2.7533
  • 1000:$2.8982
IPB60R099C7ATMA1
DISTI # V36:1790_13989137
Infineon Technologies AGTrans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK0
  • 1000000:$2.3000
  • 500000:$2.3020
  • 100000:$2.4990
  • 10000:$2.8340
  • 1000:$2.8900
IPB60R099C7ATMA1
DISTI # IPB60R099C7ATMA1
Infineon Technologies AGMOSFET HIGH POWER_NEW - Tape and Reel (Alt: IPB60R099C7ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 1000
  • 6000:$2.3900
  • 10000:$2.3900
  • 4000:$2.4900
  • 2000:$2.5900
  • 1000:$2.6900
IPB60R099C7ATMA1
DISTI # SP001297998
Infineon Technologies AGMOSFET HIGH POWER_NEW (Alt: SP001297998)
RoHS: Compliant
Min Qty: 1000
Europe - 0
  • 10000:€2.0900
  • 6000:€2.2900
  • 4000:€2.4900
  • 2000:€2.5900
  • 1000:€2.6900
IPB60R099C7ATMA1
DISTI # 726-IPB60R099C7ATMA1
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
983
  • 1:$5.2100
  • 10:$4.4300
  • 100:$3.8400
  • 250:$3.6400
  • 500:$3.2700
  • 1000:$2.7600
  • 2000:$2.6200
Bild Teil # Beschreibung
IPB60R099P7ATMA1

Mfr.#: IPB60R099P7ATMA1

OMO.#: OMO-IPB60R099P7ATMA1

MOSFET HIGH POWER_NEW
IPB60R099CPATMA1

Mfr.#: IPB60R099CPATMA1

OMO.#: OMO-IPB60R099CPATMA1

MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP
IPB60R099CP

Mfr.#: IPB60R099CP

OMO.#: OMO-IPB60R099CP

MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP
IPB60R099C7ATMA1

Mfr.#: IPB60R099C7ATMA1

OMO.#: OMO-IPB60R099C7ATMA1

MOSFET HIGH POWER_NEW
IPB60R099CPATMA1

Mfr.#: IPB60R099CPATMA1

OMO.#: OMO-IPB60R099CPATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 600V 31A D2PAK
IPB60R099C6

Mfr.#: IPB60R099C6

OMO.#: OMO-IPB60R099C6-1190

MOSFET N-Ch 650V 38A D2PAK-2 CoolMOS C6
IPB60R099C6  6R099C6

Mfr.#: IPB60R099C6 6R099C6

OMO.#: OMO-IPB60R099C6-6R099C6-1190

Neu und Original
IPB60R099C6S

Mfr.#: IPB60R099C6S

OMO.#: OMO-IPB60R099C6S-1190

Neu und Original
IPB60R099CP 6R099CP

Mfr.#: IPB60R099CP 6R099CP

OMO.#: OMO-IPB60R099CP-6R099CP-1190

Neu und Original
IPB60R099CPA

Mfr.#: IPB60R099CPA

OMO.#: OMO-IPB60R099CPA-128

MOSFET N-Ch 600V 31A D2PAK-2 CoolMOS CPA
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von IPB60R099C7ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,45 $
3,45 $
10
3,28 $
32,78 $
100
3,10 $
310,50 $
500
2,93 $
1 466,25 $
1000
2,76 $
2 760,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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