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IPB60R099P7ATMA1

IPB60R099P7ATMA1
Mfr. #:
IPB60R099P7ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET HIGH POWER_NEW
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB60R099P7ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB60R099P7ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
31 A
Rds On - Drain-Source-Widerstand:
77 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
45 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
117 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
89 ns
Typische Einschaltverzögerungszeit:
23 ns
Teil # Aliase:
IPB60R099P7 SP001664910
Tags
IPB60R099, IPB60R09, IPB60R0, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 99 mOhm 45 nC CoolMOS™ Power Mosfet - D2PAK
***ineon
Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
***ark
Mosfet, N-Ch, 600V, 31A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.077Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Teil # Mfg. Beschreibung Aktie Preis
IPB60R099P7ATMA1
DISTI # V72:2272_18787576		Infineon Technologies AGHIGH POWER_NEW2000
  • 1000:$2.3070
  • 500:$2.6690
  • 250:$3.0490
  • 100:$3.1130
  • 25:$3.3300
  • 10:$3.7000
  • 1:$4.7839
IPB60R099P7ATMA1
DISTI # V36:1790_18787576		Infineon Technologies AGHIGH POWER_NEW0
  • 1000000:$1.9270
  • 500000:$1.9290
  • 100000:$2.1000
  • 10000:$2.3850
  • 1000:$2.4320
IPB60R099P7ATMA1
DISTI # IPB60R099P7ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1985In Stock
  • 500:$2.9701
  • 100:$3.4890
  • 10:$4.2580
  • 1:$4.7400
IPB60R099P7ATMA1
DISTI # IPB60R099P7ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1985In Stock
  • 500:$2.9701
  • 100:$3.4890
  • 10:$4.2580
  • 1:$4.7400
IPB60R099P7ATMA1
DISTI # IPB60R099P7ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 2000:$2.3104
  • 1000:$2.4320
IPB60R099P7ATMA1
DISTI # 32633601		Infineon Technologies AGHIGH POWER_NEW2000
  • 4:$4.7839
IPB60R099P7ATMA1
DISTI # 32656175		Infineon Technologies AGHIGH POWER_NEW1000
  • 1000:$2.0722
IPB60R099P7ATMA1
DISTI # 32701515		Infineon Technologies AGHIGH POWER_NEW1000
  • 1000:$3.5781
IPB60R099P7ATMA1
DISTI # IPB60R099P7ATMA1		Infineon Technologies AGHIGH POWER_NEW - Tape and Reel (Alt: IPB60R099P7ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$2.0900
  • 10000:$2.0900
  • 2000:$2.1900
  • 4000:$2.1900
  • 1000:$2.2900
IPB60R099P7ATMA1
DISTI # SP001664910		Infineon Technologies AGHIGH POWER_NEW (Alt: SP001664910)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 10000:€1.7900
  • 6000:€1.8900
  • 4000:€2.0900
  • 1000:€2.1900
  • 2000:€2.1900
IPB60R099P7ATMA1
DISTI # 49AC7995		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes933
  • 500:$2.7700
  • 250:$3.0900
  • 100:$3.2500
  • 50:$3.4200
  • 25:$3.5900
  • 10:$3.7600
  • 1:$4.4200
IPB60R099P7ATMA1
DISTI # 726-IPB60R099P7ATMA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		965
  • 1:$4.3800
  • 10:$3.7200
  • 100:$3.2200
  • 250:$3.0600
  • 500:$2.7400
  • 1000:$2.3100
IPB60R099P7ATMA1Infineon Technologies AGSingle N-Channel 600 V 99 mOhm 45 nC CoolMOS Power Mosfet - D2PAK
RoHS: Not Compliant		1000Reel
  • 1000:$2.1800
IPB60R099P7ATMA1
DISTI # 2841643		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, TO-263765
  • 500:£2.1300
  • 250:£2.3700
  • 100:£2.5000
  • 10:£2.9000
  • 1:£3.8200
IPB60R099P7ATMA1
DISTI # XSFP00000127190		Infineon Technologies AG 
RoHS: Compliant		2000 in Stock0 on Order
  • 2000:$2.9100
  • 1000:$3.1100
IPB60R099P7ATMA1
DISTI # 2841643		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, TO-263
RoHS: Compliant		773
  • 1000:$3.3100
  • 500:$3.3800
  • 250:$3.5600
  • 100:$3.7700
  • 10:$4.2600
  • 1:$4.5500
Bild Teil # Beschreibung
UCC27712QDRQ1

Mfr.#: UCC27712QDRQ1

OMO.#: OMO-UCC27712QDRQ1

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IPB60R080P7ATMA1

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OMO.#: OMO-IPB60R080P7ATMA1

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V40DM150CHM3/I

Mfr.#: V40DM150CHM3/I

OMO.#: OMO-V40DM150CHM3-I

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LM5161QPWPRQ1

Mfr.#: LM5161QPWPRQ1

OMO.#: OMO-LM5161QPWPRQ1

 Switching Voltage Regulators LM5161-Q1
LM5161QPWPRQ1

Mfr.#: LM5161QPWPRQ1

OMO.#: OMO-LM5161QPWPRQ1-TEXAS-INSTRUMENTS

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V40DM150CHM3/I

Mfr.#: V40DM150CHM3/I

OMO.#: OMO-V40DM150CHM3-I-VISHAY

 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low
IPB60R080P7ATMA1

Mfr.#: IPB60R080P7ATMA1

OMO.#: OMO-IPB60R080P7ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH TO263-3
SCS310AJTLL

Mfr.#: SCS310AJTLL

OMO.#: OMO-SCS310AJTLL-ROHM-SEMI

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HHXC350ARA271MJA0G

Mfr.#: HHXC350ARA271MJA0G

OMO.#: OMO-HHXC350ARA271MJA0G-UNITED-CHEMI-CON

 Cap Aluminum Polymer 270uF 35VDC 20% (10 X 10mm) SMD 0.02 Ohm 2000mA 4000h 125C T/R
CRCW080522K0FKEAC

Mfr.#: CRCW080522K0FKEAC

OMO.#: OMO-CRCW080522K0FKEAC-VISHAY-DALE

 D12/CRCW0805-C 100 22K 1% ET1
Verfügbarkeit
Aktie:
944
Auf Bestellung:
2927
Menge eingeben:
Der aktuelle Preis von IPB60R099P7ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,38 $
4,38 $
10
3,72 $
37,20 $
100
3,22 $
322,00 $
250
3,06 $
765,00 $
500
2,74 $
1 370,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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