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BSC010N04LSTATMA1

BSC010N04LSTATMA1
Mfr. #:
BSC010N04LSTATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET DIFFERENTIATED MOSFETS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC010N04LSTATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSC010N04LSTATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
1 Ohms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
133 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
139 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
140 S
Abfallzeit:
9 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
46 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
BSC010N04LST SP001657068
Tags
BSC010N0, BSC010, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 40V 100A 8-Pin TDSON T/R
***ical
Trans MOSFET N-CH 40V 39A Tape
***i-Key
DIFFERENTIATED MOSFETS
***ark
Mosfet, N-Ch, 40 V, 100A, 167W, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.00085Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 40 V, 100A, 167W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:167W; Transistor Case Style:TDSON; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CAN N, 40 V, 100A, 167W, TDSON; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):0.00085ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:167W; Modello Case Transistor:TDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Teil # Mfg. Beschreibung Aktie Preis
BSC010N04LSTATMA1
DISTI # V72:2272_19084601		Infineon Technologies AGBSC010N04LST4593
  • 75000:$1.1034
  • 30000:$1.1374
  • 15000:$1.1714
  • 6000:$1.2055
  • 3000:$1.2395
  • 1000:$1.2735
  • 500:$1.3075
  • 250:$1.5192
  • 100:$1.5634
  • 50:$1.9948
  • 25:$2.0153
  • 10:$2.0357
  • 1:$2.6614
BSC010N04LSTATMA1
DISTI # BSC010N04LSTATMA1CT-ND		Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4989In Stock
  • 1000:$1.3028
  • 500:$1.5724
  • 100:$1.9138
  • 10:$2.3810
  • 1:$2.6500
BSC010N04LSTATMA1
DISTI # BSC010N04LSTATMA1DKR-ND		Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4989In Stock
  • 1000:$1.3028
  • 500:$1.5724
  • 100:$1.9138
  • 10:$2.3810
  • 1:$2.6500
BSC010N04LSTATMA1
DISTI # BSC010N04LSTATMA1TR-ND		Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$1.1340
BSC010N04LSTATMA1
DISTI # 29531925		Infineon Technologies AGBSC010N04LST4593
  • 6000:$1.2055
  • 3000:$1.2395
  • 1000:$1.2735
  • 500:$1.3075
  • 250:$1.5192
  • 100:$1.5634
  • 50:$1.9948
  • 25:$2.0153
  • 10:$2.0357
  • 7:$2.6614
BSC010N04LSTATMA1
DISTI # BSC010N04LSTATMA1		Infineon Technologies AGOptiMOS Power Transistor MOSFET N-Channel 40V 100A 8-Pin TDSON-FL T/R - Tape and Reel (Alt: BSC010N04LSTATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$1.0549
  • 30000:$1.0739
  • 20000:$1.1119
  • 10000:$1.1529
  • 5000:$1.1969
BSC010N04LSTATMA1
DISTI # SP001657068		Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON T/R (Alt: SP001657068)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€1.0539
  • 30000:€1.0959
  • 20000:€1.1309
  • 10000:€1.2189
  • 5000:€1.5689
BSC010N04LSTATMA1
DISTI # 93AC6979		Infineon Technologies AGMOSFET, N-CH, 40 V, 100A, 167W, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.00085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes5000
  • 1000:$1.2100
  • 500:$1.4600
  • 250:$1.5700
  • 100:$1.6800
  • 50:$1.8100
  • 25:$1.9500
  • 10:$2.0900
  • 1:$2.4600
BSC010N04LSTATMA1
DISTI # 726-BSC010N04LSTATM1		Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant		4960
  • 1:$2.4400
  • 10:$2.0700
  • 100:$1.6600
  • 500:$1.4500
  • 1000:$1.2000
BSC010N04LSTATMA1
DISTI # 2986390		Infineon Technologies AGMOSFET, N-CH, 40 V, 100A, 167W, TDSON5000
  • 500:£1.0500
  • 250:£1.1300
  • 100:£1.2100
  • 10:£1.5000
  • 1:£1.9900
BSC010N04LSTATMA1
DISTI # 2986390		Infineon Technologies AGMOSFET, N-CH, 40 V, 100A, 167W, TDSON
RoHS: Compliant		5000
  • 1000:$1.7000
  • 500:$1.7500
  • 250:$1.9400
  • 100:$2.0700
  • 10:$2.5300
  • 1:$3.3000
Bild Teil # Beschreibung
BSC027N04LSGATMA1

Mfr.#: BSC027N04LSGATMA1

OMO.#: OMO-BSC027N04LSGATMA1

 MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC022N04LSATMA1

Mfr.#: BSC022N04LSATMA1

OMO.#: OMO-BSC022N04LSATMA1

 MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
SIR826ADP-T1-GE3

Mfr.#: SIR826ADP-T1-GE3

OMO.#: OMO-SIR826ADP-T1-GE3

 MOSFET 80V Vds 20V Vgs PowerPAK SO-8
LT8642SIV#PBF

Mfr.#: LT8642SIV#PBF

OMO.#: OMO-LT8642SIV-PBF

 Switching Voltage Regulators 18V, 10A Synchronous Step-Down Silent Switcher 2 with 2.5 A Quiescent Current
MAX17505SATP+

Mfr.#: MAX17505SATP+

OMO.#: OMO-MAX17505SATP-

 Switching Voltage Regulators 1.7A, 60V Synchronous Buck Regulator and minimal ON time
CMI-9653S-SMT-TR

Mfr.#: CMI-9653S-SMT-TR

OMO.#: OMO-CMI-9653S-SMT-TR

 Audio Indicators & Alerts Buzzer 9.6mm sq 2.7kHz 3V SMT
CMI-9653S-SMT-TR

Mfr.#: CMI-9653S-SMT-TR

OMO.#: OMO-CMI-9653S-SMT-TR-CUI

 AUDIO MAGNETIC IND 2-5V SMD
SIR826ADP-T1-GE3

Mfr.#: SIR826ADP-T1-GE3

OMO.#: OMO-SIR826ADP-T1-GE3-VISHAY

 MOSFET N-CH 80V 60A PPAK SO-8
BSC027N04LSGATMA1

Mfr.#: BSC027N04LSGATMA1

OMO.#: OMO-BSC027N04LSGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 40V 100A TDSON-8
BSC022N04LSATMA1

Mfr.#: BSC022N04LSATMA1

OMO.#: OMO-BSC022N04LSATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1987
Menge eingeben:
Der aktuelle Preis von BSC010N04LSTATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,44 $
2,44 $
10
2,07 $
20,70 $
100
1,66 $
166,00 $
500
1,45 $
725,00 $
1000
1,20 $
1 200,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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