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IRF640NSTRR

IRF640NSTRR
Mfr. #:
IRF640NSTRR
Hersteller:
IR
Beschreibung:
18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF640NSTRR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
FETs - Einzeln
Verpackung
Spule
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
150 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
5.5 ns
Anstiegszeit
19 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
18 A
Vds-Drain-Source-Breakdown-Voltage
200 V
Vgs-th-Gate-Source-Threshold-Voltage
2 V to 4 V
Rds-On-Drain-Source-Widerstand
150 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
23 ns
Typische-Einschaltverzögerungszeit
10 ns
Qg-Gate-Ladung
44.7 nC
Vorwärts-Transkonduktanz-Min
6.8 S
Kanal-Modus
Erweiterung
Tags
IRF640NSTRR, IRF640NST, IRF640NS, IRF640N, IRF640, IRF64, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
***et
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R
***i-Key
MOSFET N-CH 200V 18A D2PAK
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):150mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: No
Teil # Mfg. Beschreibung Aktie Preis
IRF640NSTRRPBF
DISTI # V72:2272_13890585		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		800
  • 500:$0.6838
  • 250:$0.7310
  • 100:$0.7561
  • 25:$0.9265
  • 10:$0.9304
  • 1:$1.0402
IRF640NSTRRPBF
DISTI # IRF640NSTRRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 200V 18A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		560In Stock
  • 100:$1.1972
  • 10:$1.5150
  • 1:$1.7100
IRF640NSTRRPBF
DISTI # IRF640NSTRRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 200V 18A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		560In Stock
  • 100:$1.1972
  • 10:$1.5150
  • 1:$1.7100
IRF640NSTRRPBF
DISTI # IRF640NSTRRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 200V 18A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Limited Supply - Call
  • 800:$0.7875
IRF640NSTRRPBF
DISTI # 27018660		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		800
  • 500:$0.6838
  • 250:$0.7310
  • 100:$0.7561
  • 25:$0.9265
  • 15:$0.9304
IRF640NSTRRPBF
DISTI # IRF640NSTRRPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF640NSTRRPBF)
RoHS: Compliant
Min Qty: 1600
Container: Reel		Americas - 800
  • 1600:$0.6039
  • 3200:$0.6019
  • 4800:$0.6009
  • 8000:$0.5989
  • 16000:$0.5979
IRF640NSTRRPBF
DISTI # SP001561802		Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001561802)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 800
  • 800:€0.5599
  • 1600:€0.4579
  • 3200:€0.4199
  • 4800:€0.3869
  • 8000:€0.3599
IRF640NSTRRPBF
DISTI # IRF640NSTRRPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF640NSTRRPBF)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Asia - 0
  • 800:$0.4738
  • 1600:$0.4543
  • 2400:$0.4482
  • 4000:$0.4307
  • 8000:$0.4252
  • 20000:$0.4146
  • 40000:$0.4045
IRF640NSTRRPBF
DISTI # 70017682		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.15Ohm,ID 18A,D2Pak,PD 150W,VGS +/-20V,-55
RoHS: Compliant		0
  • 800:$0.9960
IRF640NSTRRPBFInfineon Technologies AGSingle N-Channel 200 V 0.15 Ohm 67nC HEXFET Power Mosfet - D2PAK
RoHS: Compliant		72Cut Tape/Mini-Reel
  • 1:$0.7900
  • 50:$0.6550
  • 100:$0.6350
  • 250:$0.6050
  • 500:$0.5700
IRF640NSTRRPBF
DISTI # 942-IRF640NSTRRPBF		Infineon Technologies AGMOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC
RoHS: Compliant		855
  • 1:$1.3500
  • 10:$1.1600
  • 100:$0.8850
  • 500:$0.7820
  • 800:$0.6170
IRF640NSTRRInternational Rectifier18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET1280
  • 607:$0.2860
  • 110:$0.3300
  • 1:$1.1000
IRF640NSTRRInternational Rectifier18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET160
  • 112:$1.6758
  • 11:$1.7955
  • 1:$3.5910
IRF640NSTRRInternational Rectifier 1600
  • 7:$0.8250
  • 26:$0.5363
  • 95:$0.3094
  • 325:$0.2640
  • 702:$0.2310
IRF640NSTRRPBF
DISTI # XSFT00000025436		Infineon Technologies AG 
RoHS: Compliant		14400
  • 800:$0.6300
IRF640NSTRRPBF
DISTI # C1S322000481514		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		800
  • 250:$0.7302
  • 100:$0.7554
  • 25:$0.9257
  • 10:$0.9299
Bild Teil # Beschreibung
IRF644STRRPBF

Mfr.#: IRF644STRRPBF

OMO.#: OMO-IRF644STRRPBF

 MOSFET N-Chan 250V 14 Amp
IRF644PBF

Mfr.#: IRF644PBF

OMO.#: OMO-IRF644PBF

 MOSFET N-CH 250V HEXFET MOSFET
IRF640BPF

Mfr.#: IRF640BPF

OMO.#: OMO-IRF640BPF-1190

 Neu und Original
IRF640L

Mfr.#: IRF640L

OMO.#: OMO-IRF640L-VISHAY

 MOSFET N-CH 200V 18A TO-262
IRF640NSTRLPBF,IRF640STR

Mfr.#: IRF640NSTRLPBF,IRF640STR

OMO.#: OMO-IRF640NSTRLPBF-IRF640STR-1190

 Neu und Original
IRF642

Mfr.#: IRF642

OMO.#: OMO-IRF642-1190

 Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IRF644L

Mfr.#: IRF644L

OMO.#: OMO-IRF644L-VISHAY

 MOSFET N-CH 250V 14A TO-262
IRF644SPBF

Mfr.#: IRF644SPBF

OMO.#: OMO-IRF644SPBF-VISHAY

 MOSFET N-CH 250V 14A D2PAK
IRF645

Mfr.#: IRF645

OMO.#: OMO-IRF645-1190

 Power Field-Effect Transistor, 13A I(D), 250V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IRF644STRRPBF

Mfr.#: IRF644STRRPBF

OMO.#: OMO-IRF644STRRPBF-VISHAY

 IGBT Transistors MOSFET N-Chan 250V 14 Amp
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von IRF640NSTRR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,32 $
0,32 $
10
0,31 $
3,06 $
100
0,29 $
28,96 $
500
0,27 $
136,75 $
1000
0,26 $
257,40 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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