PartNumber | IRF640NSTRLPBF | IRF640NSTRRPBF | IRF640NSPBF |
Description | MOSFET MOSFT 200V 18A 150mOhm 44.7nC | MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC | Darlington Transistors MOSFET 200V 24A 0.15 Ohm 25nC Qg 18A ID |
Manufacturer | Infineon | Infineon | IR |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263AB-3 | D2PAK-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
Id Continuous Drain Current | 18 A | 18 A | - |
Rds On Drain Source Resistance | 150 mOhms | 150 mOhms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 44.7 nC | 44.7 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 150 W | 150 W | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Tube |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon / IR | - |
Forward Transconductance Min | 6.8 S | 6.8 S | - |
Fall Time | 5.5 ns | 5.5 ns | 5.5 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 19 ns | 19 ns | 19 ns |
Factory Pack Quantity | 800 | 800 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 23 ns | 23 ns | 23 ns |
Typical Turn On Delay Time | 10 ns | 10 ns | 10 ns |
Part # Aliases | SP001561810 | SP001561802 | - |
Unit Weight | 0.070548 oz | 0.139332 oz | 0.139332 oz |
Vgs th Gate Source Threshold Voltage | - | 4 V | - |
Type | - | HEXFET Power MOSFET | - |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 150 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 18 A |
Vds Drain Source Breakdown Voltage | - | - | 200 V |
Rds On Drain Source Resistance | - | - | 150 mOhms |
Qg Gate Charge | - | - | 44.7 nC |