We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IRG7PH35UD1PBF DISTI # IRG7PH35UD1PBF-ND | Infineon Technologies AG | IGBT 1200V 50A 179W TO247 RoHS: Compliant Min Qty: 100 Container: Tube | Limited Supply - Call | |
| IRG7PH35UD1PBF DISTI # IRG7PH35UD1PBF | Infineon Technologies AG | Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: IRG7PH35UD1PBF) Min Qty: 115 Container: Bulk | Americas - 0 |
|
| IRG7PH35UD1PBF DISTI # 41T2864 | Infineon Technologies AG | Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: 41T2864) RoHS: Compliant Min Qty: 1 Container: Bulk | Americas - 0 | |
| IRG7PH35UD1PBF DISTI # 41T2864 | Infineon Technologies AG | IGBT,N CHANNEL,DIODE,1200V,50A,TO-247AC,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.9V,Power Dissipation Pd:179W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Product Range:-,MSL:- RoHS Compliant: Yes | 6 |
|
| IRG7PH35UD1PBF DISTI # 942-IRG7PH35UD1PBF | Infineon Technologies AG | IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A RoHS: Compliant | 0 | |
| IRG7PH35UD1PBF | International Rectifier | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC RoHS: Compliant | 15 |
|
| IRG7PH35UD1PBF DISTI # 7377568P | Infineon Technologies AG | TRANSISTOR IGBT N-CH 1.2KV 50A TO247AC, TU | 58 |
|
| IRG7PH35UD1PBF | International Rectifier | RoHS: Compliant | Europe - 325 | |
| IRG7PH35UD1PBF DISTI # 1857367 | Infineon Technologies AG | IGBT,N CH,DIODE,1200V,50A,TO-247AC RoHS: Compliant | 382 |
|
| IRG7PH35UD1PBF DISTI # 1857367 | Infineon Technologies AG | IGBT,N CH,DIODE,1200V,50A,TO-247AC RoHS: Compliant | 382 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: IRG7PH35UD-EP OMO.#: OMO-IRG7PH35UD-EP |
IGBT Transistors IGBT DISCRETES |
|
|
Mfr.#: IRG7PH35UDPBF OMO.#: OMO-IRG7PH35UDPBF |
IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A |
|
Mfr.#: IRG7PH30K10PBF OMO.#: OMO-IRG7PH30K10PBF |
IGBT Transistors Trnch IGBT 1200V 10A single IGBT |
|
Mfr.#: IRG7PH35UPBF |
IGBT Transistors 1200V 55A |
|
|
Mfr.#: IRG7PH30K10PBF |
IGBT 1200V 33A 210W TO247AC |
|
|
Mfr.#: IRG7PH35UD1PBF |
IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A |
|
Mfr.#: IRG7PH30K10 OMO.#: OMO-IRG7PH30K10-1190 |
Neu und Original |
|
|
Mfr.#: IRG7PH30K10D OMO.#: OMO-IRG7PH30K10D-1190 |
Neu und Original |
|
|
Mfr.#: IRG7PH35UD1-EP,G7PH35UD1 |
Neu und Original |
|
|
Mfr.#: IRG7PH35UD1-EPBF OMO.#: OMO-IRG7PH35UD1-EPBF-1190 |
Neu und Original |
