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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IRG7PH35UD1-EP DISTI # IRG7PH35UD1-EP-ND | Infineon Technologies AG | IGBT 1200V 50A 179W TO247 RoHS: Compliant Min Qty: 350 Container: Tube | Limited Supply - Call | |
| IRG7PH35UD1-EP DISTI # 76R0795 | Infineon Technologies AG | INSULATED GATE BIPOLAR TRANSISTOR,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:179W,Collector Emitter Voltage V(br)ceo:-,No. of Pins:3Pins,Operating Temperature Max:150°C , RoHS Compliant: Yes | 82 |
|
| IRG7PH35UD1-EP | International Rectifier | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AD RoHS: Compliant | 951800 |
|
| IRG7PH35UD1-EP DISTI # 942-IRG7PH35UD1-EP | Infineon Technologies AG | IGBT Transistors IGBT DISCRETES RoHS: Compliant | 15 |
|
| IRG7PH35UD1-EP DISTI # 9074921P | Infineon Technologies AG | IGBT N-CHANNEL 1200V 50A TO-247AD, TU | 15 |
|
| IRG7PH35UD1-EP DISTI # 1822979 | Infineon Technologies AG | INSULATED GATE BIPOLAR TRANSISTOR RoHS: Compliant | 82 |
|
| IRG7PH35UD1-EP DISTI # 1822979 | Infineon Technologies AG | INSULATED GATE BIPOLAR TRANSISTOR RoHS: Compliant | 82 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: IRG7PH35UD-EP OMO.#: OMO-IRG7PH35UD-EP |
IGBT Transistors IGBT DISCRETES |
|
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Mfr.#: IRG7PH35UPBF OMO.#: OMO-IRG7PH35UPBF |
IGBT Transistors 1200V 55A |
|
Mfr.#: IRG7PH35U-EP |
IGBT 1200V 55A TO247 |
|
|
Mfr.#: IRG7PH35U-EPBF |
IGBT 1200V ULTRA FAST TO247 |
|
Mfr.#: IRG7PH35UD1PBF |
IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A |
|
Mfr.#: IRG7PH35UD1 OMO.#: OMO-IRG7PH35UD1-1190 |
Neu und Original |
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Mfr.#: IRG7PH35UD1-EP,G7PH35UD1 |
Neu und Original |
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Mfr.#: IRG7PH35UD1-EP,G7PH35UD1-E |
Neu und Original |
|
|
Mfr.#: IRG7PH35UD1-EPBF OMO.#: OMO-IRG7PH35UD1-EPBF-1190 |
Neu und Original |
|
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Mfr.#: IRG7PH35UD1MPBF |
IGBT 1200V 50A 179W TO247AD |