IRG7PH35UD1MPBF

IRG7PH35UD1MPBF
Mfr. #:
IRG7PH35UD1MPBF
Hersteller:
Infineon Technologies
Beschreibung:
IGBT 1200V 50A 179W TO247AD
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRG7PH35UD1MPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-247AD
Leistung max
179W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
50A
Spannungs-Kollektor-Emitter-Breakdown-Max
1200V
IGBT-Typ
Graben
Strom-Kollektor-gepulster-Icm
150A
Vce-on-Max-Vge-Ic
2.2V @ 15V, 20A
Schaltenergie
620μJ (off)
Gate-Gebühr
130nC
Td-ein-aus-25°C
-/160ns
Testbedingung
600V, 20A, 10 Ohm, 15V
Tags
IRG7PH35UD1, IRG7PH35UD, IRG7PH35, IRG7PH3, IRG7PH, IRG7P, IRG7, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 1200V 50A 3-Pin TO-247AD Tube
***or
IGBT W/ULTRA-LOW VF DIODE FOR IN
*** Electronic Components
IGBT 1200V 50A 179W TO247AD
***el Electronic
CONN SWH RCPT STR 50 OHM SMD
***ark
IGBT TO-247, TUBE
***ical
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
***ure Electronics
IGBT Transistors 1200V/25 FAST IGBT FSII T
***i-Key
IGBT FIELD STOP 1200V 50A TO247
***ical
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247
***ark
1200V/25 Fast Igbt Only Fsii To-247 / Tube
***ical
Trans IGBT Chip N-CH 1200V 50A 428000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AB
***emi
IGBT, 1200V, 25A Field Stop Trench
***ark
RAIL/1200V 25A FS2 Trench IGBT
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247
***el Electronic
IGBT Transistors IGBT & Power Bipolar
***i-Key
IGBT H-SERIES 1200V 25A TO-247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247
***icroelectronics SCT
Trench gate field-stop IGBT, TO-247 long leads, Tube
Teil # Mfg. Beschreibung Aktie Preis
IRG7PH35UD1MPBF
DISTI # IRG7PH35UD1MPBF-ND
Infineon Technologies AGIGBT 1200V 50A 179W TO247AD
RoHS: Compliant
Min Qty: 100
Container: Tube
Limited Supply - Call
    IRG7PH35UD1MPBFInternational RectifierInsulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant
    2355
    • 1000:$2.9500
    • 500:$3.1000
    • 100:$3.2300
    • 25:$3.3700
    • 1:$3.6300
    IRG7PH35UD1MPBF
    DISTI # 942-IRG7PH35UD1MPBF
    Infineon Technologies AGIGBT Transistors 1200V UltraFast Discrete IGBT
    RoHS: Compliant
    0
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von IRG7PH35UD1MPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      4,18 $
      4,18 $
      10
      3,98 $
      39,76 $
      100
      3,77 $
      376,65 $
      500
      3,56 $
      1 778,65 $
      1000
      3,35 $
      3 348,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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