IXFK360N15T2

IXFK360N15T2
Mfr. #:
IXFK360N15T2
Hersteller:
Littelfuse
Beschreibung:
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFK360N15T2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFK360N15T2 DatasheetIXFK360N15T2 Datasheet (P4-P6)
ECAD Model:
Mehr Informationen:
IXFK360N15T2 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-264
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
1670 W
Handelsname:
HiPerFET
Verpackung:
Rohr
Produkt:
MOSFET-Gate-Treiber
Serie:
IXFK360N15
Marke:
IXYS
Abfallzeit:
265 ns
Produktart:
MOSFET
Anstiegszeit:
170 ns
Werkspackungsmenge:
25
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.352740 oz
Tags
IXFK36, IXFK3, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 150 V 1670 W 4 mO GigaMOS TrenchT2 HiperFet MosFet - TO-264
***ical
Trans MOSFET N-CH 150V 360A 3-Pin(3+Tab) TO-264
***i-Key
MOSFET N-CH 150V 360A TO264AA
***el Nordic
Contact for details
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Teil # Mfg. Beschreibung Aktie Preis
IXFK360N15T2
DISTI # V99:2348_15877642
IXYS CorporationTrans MOSFET N-CH 150V 360A 3-Pin(3+Tab) TO-264
RoHS: Compliant
10
  • 500:$12.9500
  • 250:$14.6800
  • 100:$16.8900
  • 50:$17.3200
  • 25:$18.6400
  • 10:$19.8000
  • 5:$20.9200
  • 1:$21.5400
IXFK360N15T2
DISTI # IXFK360N15T2-ND
IXYS CorporationMOSFET N-CH 150V 360A TO264
RoHS: Compliant
Min Qty: 1
Container: Tube
225In Stock
  • 100:$18.4749
  • 25:$19.8780
  • 1:$23.3900
IXFK360N15T2
DISTI # 27544695
IXYS CorporationTrans MOSFET N-CH 150V 360A 3-Pin(3+Tab) TO-264
RoHS: Compliant
10
  • 10:$19.8000
  • 5:$20.9200
  • 1:$21.5400
IXFK360N15T2
DISTI # 747-IXFK360N15T2
IXYS CorporationGate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant
199
  • 1:$24.4500
  • 5:$23.9000
  • 10:$22.6200
  • 25:$21.2600
  • 50:$19.6700
  • 100:$19.3100
  • 250:$16.4800
  • 500:$14.3500
IXFK360N15T2
DISTI # C1S331700025102
IXYS CorporationTrans MOSFET N-CH 150V 360A 3-Pin(3+Tab) TO-264
RoHS: Compliant
10
  • 10:$19.9800
  • 1:$21.4800
Bild Teil # Beschreibung
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LNK3604D-TL

Mfr.#: LNK3604D-TL

OMO.#: OMO-LNK3604D-TL

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FR0H474ZF

Mfr.#: FR0H474ZF

OMO.#: OMO-FR0H474ZF

Supercapacitors / Ultracapacitors 5.5V .47F -20/80% LS=5.08mm
1776524

Mfr.#: 1776524

OMO.#: OMO-1776524

Pluggable Terminal Blocks 4 Pos 5.08mm pitch Through Hole Header
KDZVTFTR5.6B

Mfr.#: KDZVTFTR5.6B

OMO.#: OMO-KDZVTFTR5-6B-ROHM-SEMI

ZENER DIODES (CORRESPONDS TO AEC
LNK3604D-TL

Mfr.#: LNK3604D-TL

OMO.#: OMO-LNK3604D-TL-POWER-INTEGRATIONS

IC OFFLN CONV FLYBACK 8SO
VS-MBR20100CT-M3

Mfr.#: VS-MBR20100CT-M3

OMO.#: OMO-VS-MBR20100CT-M3-VISHAY

DIODE SCHOTTKY 100V 10A TO220AB
MRFX1K80HR5

Mfr.#: MRFX1K80HR5

OMO.#: OMO-MRFX1K80HR5-NXP-SEMICONDUCTORS

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Verfügbarkeit
Aktie:
141
Auf Bestellung:
2124
Menge eingeben:
Der aktuelle Preis von IXFK360N15T2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
21,26 $
21,26 $
5
19,66 $
98,30 $
10
18,86 $
188,60 $
25
18,07 $
451,75 $
50
17,43 $
871,50 $
100
16,79 $
1 679,00 $
250
16,48 $
4 120,00 $
500
14,35 $
7 175,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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