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FQB4N80TM

FQB4N80TM
Mfr. #:
FQB4N80TM
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 800V N-Channel QFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQB4N80TM Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
3.9 A
Rds On - Drain-Source-Widerstand:
3.6 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
3.13 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
4.83 mm
Länge:
10.67 mm
Serie:
FQB4N80
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
9.65 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
3.8 S
Abfallzeit:
35 ns
Produktart:
MOSFET
Anstiegszeit:
45 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
35 ns
Typische Einschaltverzögerungszeit:
16 ns
Gewichtseinheit:
0.046296 oz
Tags
FQB4N, FQB4, FQB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 3.9 A, 800 V, 2.8 ohm, 10 V, 5 V
***ure Electronics
N-Channel 800 V 3.6 Ohm 25 nC Surface Mount Mosfet - D2PAK-3
***et Europe
Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R
***emi
N-Channel QFET® MOSFET 800V, 3.9A, 3.6Ω
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 800V, 3.9A, TO-263AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:130W; Transistor Case Style:TO-263AB; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
FQB4N80TM
DISTI # V72:2272_06301137		ON SemiconductorN-CH/800V/3.9A/3.6OHM520
  • 500:$0.8658
  • 250:$0.9806
  • 100:$1.0187
  • 25:$1.3024
  • 10:$1.3043
  • 1:$1.5051
FQB4N80TM
DISTI # FQB4N80TMCT-ND		ON SemiconductorMOSFET N-CH 800V 3.9A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		803In Stock
  • 100:$1.2683
  • 10:$1.5780
  • 1:$1.7500
FQB4N80TM
DISTI # FQB4N80TMDKR-ND		ON SemiconductorMOSFET N-CH 800V 3.9A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		803In Stock
  • 100:$1.2683
  • 10:$1.5780
  • 1:$1.7500
FQB4N80TM
DISTI # FQB4N80TMTR-ND		ON SemiconductorMOSFET N-CH 800V 3.9A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 800:$0.9084
FQB4N80TM
DISTI # 30703250		ON SemiconductorN-CH/800V/3.9A/3.6OHM3200
  • 9600:$0.6421
  • 2400:$0.6673
  • 800:$0.7530
FQB4N80TM
DISTI # 29055410		ON SemiconductorN-CH/800V/3.9A/3.6OHM520
  • 500:$0.8658
  • 250:$0.9806
  • 100:$1.0187
  • 25:$1.3024
  • 12:$1.3043
FQB4N80TM
DISTI # FQB4N80TM		ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB4N80TM)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$0.5649
  • 1600:$0.5609
  • 3200:$0.5539
  • 4800:$0.5469
  • 8000:$0.5339
FQB4N80TM
DISTI # FQB4N80TM		ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB4N80TM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 0
  • 800:€0.8359
  • 1600:€0.6839
  • 3200:€0.6269
  • 4800:€0.5779
  • 8000:€0.5369
FQB4N80TM
DISTI # FQB4N80TM		ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB4N80TM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Asia - 0
  • 800:$0.6872
  • 1600:$0.6608
  • 2400:$0.6363
  • 4000:$0.6136
  • 8000:$0.5925
  • 20000:$0.5727
  • 40000:$0.5633
FQB4N80TMFairchild Semiconductor CorporationPower Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		2400
  • 1000:$1.0300
  • 500:$1.0800
  • 100:$1.1300
  • 25:$1.1800
  • 1:$1.2700
FQB4N80TM
DISTI # 512-FQB4N80TM		ON SemiconductorMOSFET 800V N-Channel QFET
RoHS: Compliant		1036
  • 1:$1.6400
  • 10:$1.4000
  • 100:$1.0700
  • 500:$0.9460
  • 800:$0.7470
  • 2400:$0.6620
  • 9600:$0.6370
FQB4N80TM
DISTI # 6710908P		ON SemiconductorMOSFET N-CHANNEL 800V 3.9A D2PAK, RL854
  • 5:£0.5000
FQB4N80TMFairchild Semiconductor Corporation 
RoHS: Compliant		Europe - 800
    FQB4N80TM
    DISTI # C1S541901511368    		ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		3200
    • 2400:$0.6880
    • 1600:$0.8310
    • 800:$0.8990
    FQB4N80TM
    DISTI # C1S541901596147    		ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		520
    • 250:$0.9806
    • 100:$1.0187
    • 25:$1.3024
    • 10:$1.3043
    FQB4N80TM
    DISTI # 2453890RL    		ON SemiconductorMOSFET, N-CH, 800V, 3.9A, TO-263AB-3
    RoHS: Compliant    		0
    • 1:$2.6000
    • 10:$2.2200
    • 100:$1.7000
    • 500:$1.5100
    • 800:$1.1900
    • 2400:$1.0500
    • 9600:$1.0100
    FQB4N80TM
    DISTI # 2453890    		ON SemiconductorMOSFET, N-CH, 800V, 3.9A, TO-263AB-3
    RoHS: Compliant    		0
    • 1:$2.6000
    • 10:$2.2200
    • 100:$1.7000
    • 500:$1.5100
    • 800:$1.1900
    • 2400:$1.0500
    • 9600:$1.0100
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    GRM31CR61E476ME44K

    Mfr.#: GRM31CR61E476ME44K

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    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT
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    OMO.#: OMO-CRCW0603330RFKEAC-VISHAY-DALE

    		 D11/CRCW0603-C 100 330R 1% ET1
    C0603X104K5RACTU

    Mfr.#: C0603X104K5RACTU

    OMO.#: OMO-C0603X104K5RACTU-1105

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    Mfr.#: DS3680D

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    		 IC QUAD PHONE RELAY DRVR 14-SOIC
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1984
    Menge eingeben:
    Der aktuelle Preis von FQB4N80TM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,64 $
    1,64 $
    10
    1,40 $
    14,00 $
    100
    1,07 $
    107,00 $
    500
    0,95 $
    473,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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