FQB4N

FQB4N20LTM vs FQB4N20 vs FQB4N20L

 
PartNumberFQB4N20LTMFQB4N20FQB4N20L
DescriptionMOSFET 200V N-Ch QFET Logic Level
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current3.8 A--
Rds On Drain Source Resistance1.35 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.13 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Fall Time40 ns--
Product TypeMOSFET--
Rise Time70 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time7 ns--
Unit Weight0.011640 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB4N80TM MOSFET 800V N-Channel QFET
FQB4N20LTM MOSFET 200V N-Ch QFET Logic Level
FQB4N20 Neu und Original
FQB4N20L Neu und Original
FQB4N20TM-NL Neu und Original
FQB4N20TMFSC Neu und Original
FQB4N25 Neu und Original
FQB4N50 Neu und Original
FQB4N60 Neu und Original
FQB4N60C Neu und Original
FQB4N80 Neu und Original
FQB4N90 Neu und Original
FQB4N90TM-NL Neu und Original
ON Semiconductor
ON Semiconductor
FQB4N20TM MOSFET N-CH 200V 3.6A D2PAK
FQB4N50TM MOSFET N-CH 500V 3.4A D2PAK
FQB4N90TM MOSFET N-CH 900V 4.2A D2PAK
FQB4N80TM MOSFET N-CH 800V 3.9A D2PAK
FQB4N20LTM MOSFET N-CH 200V 3.8A D2PAK
FQB4N25TM MOSFET N-CH 250V 3.6A D2PAK
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