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CY7C1312KV18-333BZC

CY7C1312KV18-333BZC
Mfr. #:
CY7C1312KV18-333BZC
Hersteller:
Cypress Semiconductor
Beschreibung:
SRAM 18Mb 333Mhz 1.8V 1M x 18 QDR II SRAM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CY7C1312KV18-333BZC Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CY7C1312KV18-333BZC Mehr Informationen CY7C1312KV18-333BZC Product Details
Produkteigenschaft
Attributwert
Hersteller:
Cypress Semiconductor
Produktkategorie:
SRAM
RoHS:
N
Speichergröße:
18 Mbit
Organisation:
1 M x 18
Zugriffszeit:
-
Maximale Taktfrequenz:
333 MHz
Oberflächentyp:
Parallel
Versorgungsspannung - Max.:
1.9 V
Versorgungsspannung - Min.:
1.7 V
Versorgungsstrom - Max.:
690 mA
Minimale Betriebstemperatur:
0 C
Maximale Betriebstemperatur:
+ 70 C
Montageart:
SMD/SMT
Paket / Koffer:
FBGA-165
Verpackung:
Tablett
Speichertyp:
Flüchtig
Serie:
CY7C1312KV18
Typ:
Synchron
Marke:
Cypress Semiconductor
Feuchtigkeitsempfindlich:
ja
Produktart:
SRAM
Werkspackungsmenge:
136
Unterkategorie:
Speicher & Datenspeicherung
Tags
CY7C1312KV18-3, CY7C1312K, CY7C1312, CY7C131, CY7C13, CY7C1, CY7C, CY7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
SRAM Chip Sync Dual 1.8V 18M-bit 1M x 18 0.45ns 165-Pin FBGA Tray
***ponent Stockers USA
1M X 18 QDR SRAM 0.45 ns PBGA165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et Europe
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
DDR-II CIO, 18 Mbit Density, BGA-165, RoHS
***ponent Stockers USA
512K X 36 DDR SRAM 0.45 ns PBGA165
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
DDR-II SIO, 18 Mbit Density, BGA-165
***ponent Stockers USA
1M X 18 DDR SRAM 0.45 ns PBGA165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Dual 1.8V 18M-Bit 2M x 9-Bit 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
Synchronous SRAM, QDR-II, 18432 Kb Density, 333 MHz Frequency, BGA-165
***ponent Stockers USA
2M X 9 QDR SRAM 0.45 ns PBGA165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***ark
18Mb, QUAD (Burst of 2), Sync SRAM, 1M x 18, 165 Ball FBGA (15x17 mm), RoHS
***et
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 165-Pin FBGA
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
Cypress QDR-II DDR-II Sync SRAM
Cypress QDR-II is a high performance, dual-port SRAM memory. QDR-II SRAM offers a maximum speed of 333 MHz, densities up to 144 Mb, read latencies of 1.5 or 2.5 cycles, burst length of 2 or 4, and is available in an industry-standard 165-ball FBGA package. The QDR-II family also includes double data rate (DDR-II) devices. DDR-II devices are similar to QDR-II devices except that all DDR devices have a burst length of 2 and a single data rate address bus. Additionally, DDR-II is available in SIO (separate I/O) or CIO (common I/O) options. SIO devices provide independent read and write ports, eliminating the data bus "turnaround" time found in CIO devices. CIO devices provide a single port for reads and writes, reducing the number of required data pin connections.Learn More
Synchronous SRAM
Cypress Synchronous SRAM offers true random memory access capabilities required for networking and other high performance applications. The Cypress Synchronous SRAM portfolio is available with a number of features designed to solve networking and high performance computing challenges. The portfolio includes standard synchronous SRAM, No Bus Latency SRAM, and QDR® SRAM with a variety of speeds, word widths, densities, and packages. Cypress Synchronous SRAM devices areideal for a wide range of applications including high-speed network switches & routers, communications infrastructure, test equipment, imaging & video and high performance computing.Learn More
Teil # Mfg. Beschreibung Aktie Preis
CY7C1312KV18-333BZC
DISTI # CY7C1312KV18-333BZC-ND		Cypress SemiconductorIC SRAM 18M PARALLEL 165FBGA
RoHS: Not compliant
Min Qty: 1
Container: Tray		136In Stock
  • 272:$28.3012
  • 136:$29.1041
  • 50:$33.2300
  • 25:$34.0776
  • 10:$35.3260
  • 1:$38.0900
CY7C1312KV18-333BZC
DISTI # 727-7C1312KV18333BZC		Cypress SemiconductorSRAM 18Mb 333Mhz 1.8V 1M x 18 QDR II SRAM
RoHS: Not compliant		136
  • 1:$36.2800
  • 5:$34.4300
  • 10:$33.6400
  • 25:$32.4500
  • 50:$31.4900
  • 100:$27.6300
  • 250:$27.2100
CY7C1312KV18-333BZCCypress SemiconductorQDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165
RoHS: Not Compliant		461
  • 1000:$32.1500
  • 500:$33.8400
  • 100:$35.2300
  • 25:$36.7400
  • 1:$39.5600
Bild Teil # Beschreibung
CY7C1312KV18-250BZXC

Mfr.#: CY7C1312KV18-250BZXC

OMO.#: OMO-CY7C1312KV18-250BZXC

 SRAM 18Mb 250Mhz 1.8V 1M x 18 QDR II SRAM
CY7C1312KV18-250BZC

Mfr.#: CY7C1312KV18-250BZC

OMO.#: OMO-CY7C1312KV18-250BZC

 SRAM 18Mb 250Mhz 1.8V 1M x 18 QDR II SRAM
CY7C1312KV18-250BZXI

Mfr.#: CY7C1312KV18-250BZXI

OMO.#: OMO-CY7C1312KV18-250BZXI

 SRAM 18Mb 250Mhz 1.8V 1M x 18 QDR II SRAM
CY7C1312KV18-300BZXCT

Mfr.#: CY7C1312KV18-300BZXCT

OMO.#: OMO-CY7C1312KV18-300BZXCT

 SRAM 18Mb 300Mhz 1.8V 1M x 18 QDR II SRAM
CY7C1312KV18-250BZCT

Mfr.#: CY7C1312KV18-250BZCT

OMO.#: OMO-CY7C1312KV18-250BZCT

 SRAM 18Mb 250Mhz 1.8V 1M x 18 QDR II SRAM
CY7C1312KV18-250BZCT

Mfr.#: CY7C1312KV18-250BZCT

OMO.#: OMO-CY7C1312KV18-250BZCT-CYPRESS-SEMICONDUCTOR

 Neu und Original
CY7C1312KV18-300BZC

Mfr.#: CY7C1312KV18-300BZC

OMO.#: OMO-CY7C1312KV18-300BZC-CYPRESS-SEMICONDUCTOR

 SRAM 18Mb 300Mhz 1.8V 1M x 18 QDR II SRAM
CY7C1312KV18-250BZC

Mfr.#: CY7C1312KV18-250BZC

OMO.#: OMO-CY7C1312KV18-250BZC-CYPRESS-SEMICONDUCTOR

 SRAM 18Mb 250Mhz 1.8V 1M x 18 QDR II SRAM
CY7C1312KV18-300BZXC

Mfr.#: CY7C1312KV18-300BZXC

OMO.#: OMO-CY7C1312KV18-300BZXC-CYPRESS-SEMICONDUCTOR

 SRAM 18Mb 300Mhz 1.8V 1M x 18 QDR II SRAM
CY7C1312KV18-250BZXI

Mfr.#: CY7C1312KV18-250BZXI

OMO.#: OMO-CY7C1312KV18-250BZXI-CYPRESS-SEMICONDUCTOR

 SRAM 18Mb 250Mhz 1.8V 1M x 18 QDR II SRAM
Verfügbarkeit
Aktie:
136
Auf Bestellung:
2119
Menge eingeben:
Der aktuelle Preis von CY7C1312KV18-333BZC dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
36,28 $
36,28 $
5
34,43 $
172,15 $
10
33,64 $
336,40 $
25
32,45 $
811,25 $
50
31,49 $
1 574,50 $
100
27,63 $
2 763,00 $
250
27,21 $
6 802,50 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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