RGT30NS65DGTL

Mfr. #:: RGT30NS65DGTL
Hersteller:: Rohm Semiconductor
Beschreibung:: IGBT Transistors 650V 15A IGBT Stop Trench
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: RGT30NS65DGTL Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: RGT30NS65DGTL Datasheet RGT30NS65DGTL Datasheet (P4)
ECAD Model:
Mehr Informationen:: RGT30NS65DGTL Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: ROHM Halbleiter

Produktkategorie:: IGBT-Transistoren

RoHS:: Y

Technologie:: Si

Paket / Koffer:: TO-263-3

Montageart:: SMD/SMT

Kollektor- Emitterspannung VCEO Max:: 650 V

Kollektor-Emitter-Sättigungsspannung:: 1.65 V

Maximale Gate-Emitter-Spannung:: 30 V

Kontinuierlicher Kollektorstrom bei 25 C:: 30 A

Pd - Verlustleistung:: 133 W

Minimale Betriebstemperatur:: - 40 C

Maximale Betriebstemperatur:: + 175 C

Serie:: RGT30NS65D

Verpackung:: Spule

Kontinuierlicher Kollektorstrom Ic Max:: 30 A

Betriebstemperaturbereich:: - 40 C to + 175 C

Marke:: ROHM Halbleiter

Kontinuierlicher Kollektorstrom:: 15 A

Gate-Emitter-Leckstrom:: +/- 200 nA

Produktart:: IGBT-Transistoren

Werkspackungsmenge:: 1000

Unterkategorie:: IGBTs

Teil # Aliase:: RGT30NS65D(LPDS)

Gewichtseinheit:: 0.068654 oz

Tags: RGT30NS, RGT30N, RGT3, RGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RGT30NS65DGTL Beschreibung

***ical: Trans IGBT Chip N-CH 650V 30A 133000mW 3-Pin(2+Tab) LPDS T/R

***nell: IGBT, SINGLE, 650V, 30A, TO-263S-3

***ark: Igbt, Single, 650V, 30A, To-263S-3; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:133W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-263S; No. Of Pins:3Pins; Rohs Compliant: Yes

RGT30NS65DGTL Mehr Informationen

Field Stop Trench IGBTs: ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
RGT30NS65DGTL DISTI # RGT30NS65DGTLCT-ND	ROHM Semiconductor	IGBT 650V 30A 133W TO-263S RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	986In Stock	500:$1.1266 250:$1.2875 100:$1.3712 25:$1.6092 10:$1.7060 1:$1.9000
RGT30NS65DGTL DISTI # RGT30NS65DGTLDKR-ND	ROHM Semiconductor	IGBT 650V 30A 133W TO-263S RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	986In Stock	500:$1.1266 250:$1.2875 100:$1.3712 25:$1.6092 10:$1.7060 1:$1.9000
RGT30NS65DGTL DISTI # RGT30NS65DGTLTR-ND	ROHM Semiconductor	IGBT 650V 30A 133W TO-263S RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$0.8750 1000:$0.9063
RGT30NS65DGTL DISTI # RGT30NS65DGTL	ROHM Semiconductor	Trans IGBT Chip N-CH 650V 30A 3-Pin TO-263S T/R - Tape and Reel (Alt: RGT30NS65DGTL) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$0.8019 6000:$0.8239 4000:$0.8719 2000:$0.9269 1000:$0.9879
RGT30NS65DGTL DISTI # 76Y4983	ROHM Semiconductor	IGBT, SINGLE, 650V, 30A, TO-263S-3,DC Collector Current:30A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:133W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-263S,No. of Pins:3Pins,RoHS Compliant: Yes	80	5000:$0.8140 2500:$0.8420 1000:$1.0400 500:$1.1600 100:$1.2500 10:$1.5600 1:$1.8400
RGT30NS65DGTL DISTI # 755-RGT30NS65DGTL	ROHM Semiconductor	IGBT Transistors 650V 15A IGBT Stop Trench RoHS: Compliant	740	1:$1.8400 10:$1.5700 100:$1.2500 500:$1.1000 1000:$0.9070 2000:$0.8440 5000:$0.8130 10000:$0.7820
RGT30NS65DGTL DISTI # 2519779	ROHM Semiconductor	IGBT, SINGLE, 650V, 30A, TO-263S-3 RoHS: Compliant	80	500:$1.7000 100:$1.9200 10:$2.4200 1:$2.8300
RGT30NS65DGTL DISTI # 2519779	ROHM Semiconductor	IGBT, SINGLE, 650V, 30A, TO-263S-3	80	500:£0.6800 250:£0.7250 100:£0.7710 10:£1.0100 1:£1.3000
RGT30NS65DGTL DISTI # IGBT2240	ROHM Semiconductor	IGBT650V15A1,65VTO-262 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	1000:$1.3700 2000:$1.2800 3000:$1.2500 4000:$1.1400
RGT30NS65DGTL	ROHM Semiconductor	IGBT Transistors 650V 15A IGBT Stop Trench RoHS: Compliant	Americas -

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Verfügbarkeit

Aktie:: 740
Auf Bestellung:: 2723
Menge eingeben:

Der aktuelle Preis von RGT30NS65DGTL dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,84 $~~; ~~1,84 $~~

10: ~~1,57 $~~; ~~15,70 $~~

100: ~~1,25 $~~; ~~125,00 $~~

500: ~~1,10 $~~; ~~550,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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RGT30NS65DGTL

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes