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Teil # | Mfg. | Beschreibung | Aktie | Preis |
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SCT2H12NYTB DISTI # SCT2H12NYTBCT-ND | ROHM Semiconductor | 1700V 1.2 OHM 4A SIC FET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 2293In Stock |
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SCT2H12NYTB DISTI # SCT2H12NYTBDKR-ND | ROHM Semiconductor | 1700V 1.2 OHM 4A SIC FET RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 2293In Stock |
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SCT2H12NYTB DISTI # SCT2H12NYTBTR-ND | ROHM Semiconductor | 1700V 1.2 OHM 4A SIC FET RoHS: Compliant Min Qty: 400 Container: Tape & Reel (TR) | 2000In Stock |
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SCT2H12NYTB DISTI # SCT2H12NYTB | ROHM Semiconductor | Trans MOSFET N-CH 1700V 4A 3-Pin TO-268 Emboss T/R - Tape and Reel (Alt: SCT2H12NYTB) RoHS: Compliant Min Qty: 400 Container: Reel | Americas - 0 |
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SCT2H12NYTB DISTI # SCT2H12NYTB | ROHM Semiconductor | Trans MOSFET N-CH 1700V 4A 3-Pin TO-268 Emboss T/R (Alt: SCT2H12NYTB) RoHS: Compliant Min Qty: 1 Container: Tape and Reel | Europe - 0 |
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SCT2H12NYTB DISTI # 18AC7649 | ROHM Semiconductor | MOSFET, N-CH, 1.7KV, 4A, TO-268,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:1.7kV,On Resistance Rds(on):1.15ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes | 108 |
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SCT2H12NYTB. DISTI # 30AC0012 | ROHM Semiconductor | Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:1.7kV,On Resistance Rds(on):1.15ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:2.8V,Power Dissipation Pd:44W,No. of Pins:2Pins RoHS Compliant: Yes | 800 |
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SCT2H12NYTB DISTI # 755-SCT2H12NYTB | ROHM Semiconductor | MOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide RoHS: Compliant | 2478 |
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SCT2H12NYTB DISTI # 1501510 | ROHM Semiconductor | MOSFET N-CH 1700V 4A SIC TO-268-2L, PK | 2 |
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SCT2H12NYTB | ROHM Semiconductor | POWER FIELD-EFFECT TRANSISTOR | 12 |
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SCT2H12NYTB DISTI # TMOSP12912 | ROHM Semiconductor | SiC-N 1700V 4A 1150mOhm TO268 RoHS: Compliant | Stock DE - 1200Stock HK - 0Stock US - 0 |
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SCT2H12NYTB | ROHM Semiconductor | RoHS(ship within 1day) | 16 |
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SCT2H12NYTB | ROHM Semiconductor | MOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide RoHS: Compliant | Americas - 1600 | |
SCT2H12NYTB DISTI # 2762593 | ROHM Semiconductor | MOSFET, N-CH, 1.7KV, 4A, TO-268 | 126 |
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SCT2H12NYTB DISTI # 2762593 | ROHM Semiconductor | MOSFET, N-CH, 1.7KV, 4A, TO-268 RoHS: Compliant | 103 |
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Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: SCT2H12NYTB OMO.#: OMO-SCT2H12NYTB |
MOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide | |
Mfr.#: SCT2H12NZGC11 OMO.#: OMO-SCT2H12NZGC11 |
MOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC | |
Mfr.#: SCT2H12NY OMO.#: OMO-SCT2H12NY-1190 |
Neu und Original | |
Mfr.#: SCT2H12NYTB OMO.#: OMO-SCT2H12NYTB-ROHM-SEMI |
1700V 1.2 OHM 4A SIC FET | |
Mfr.#: SCT2H12NZGC11 OMO.#: OMO-SCT2H12NZGC11-ROHM-SEMI |
MOSFET N-CH 1700V 3.7A |