STGWT60H65DFB

STGWT60H65DFB
Mfr. #:
STGWT60H65DFB
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGWT60H65DFB Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGWT60H65DFB Mehr Informationen STGWT60H65DFB Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-3P
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.6 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
80 A
Pd - Verlustleistung:
375 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
STGWT60H65DFB
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
60 A
Marke:
STMicroelectronics
Gate-Emitter-Leckstrom:
250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
300
Unterkategorie:
IGBTs
Gewichtseinheit:
0.238311 oz
Tags
STGWT60H65D, STGWT60H65, STGWT60H, STGWT6, STGWT, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-3P Tube
***ure Electronics
STGWT60H65DFB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - TO-3P
***va Crawler
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
***Components
In a Tube of 30, STMicroelectronics STGWT60H65DFB IGBT
***p One Stop Global
Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P Tube
***et Europe
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube
***ied Electronics & Automation
IGBT Trench HB Series 650V 60A TO-3P
***i-Key
IGBT 650V 80A 375W TO3P-3L
***ark
Ptd High Voltage
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
Teil # Mfg. Beschreibung Aktie Preis
STGWT60H65DFB
DISTI # V79:2366_17794153
STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P Tube
RoHS: Compliant
3
  • 2500:$2.4850
  • 1000:$2.6420
  • 500:$3.1589
  • 250:$3.5510
  • 100:$3.7790
  • 10:$4.3940
  • 1:$5.2009
STGWT60H65DFB
DISTI # V99:2348_17652447
STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P Tube
RoHS: Compliant
0
    STGWT60H65DFB
    DISTI # 497-14232-5-ND
    STMicroelectronicsIGBT 650V 80A 375W TO3P-3L
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    On Order
    • 2520:$2.8000
    • 1020:$2.9400
    • 510:$3.4860
    • 120:$4.0950
    • 30:$4.7250
    • 1:$5.5700
    STGWT60H65DFB
    DISTI # STGWT60H65DFB
    STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT60H65DFB)
    RoHS: Compliant
    Min Qty: 300
    Container: Tube
    Americas - 0
    • 300:$2.8900
    • 600:$2.7900
    • 1200:$2.6900
    • 1800:$2.5900
    • 3000:$2.4900
    STGWT60H65DFB
    DISTI # STGWT60H65DFB
    STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube (Alt: STGWT60H65DFB)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1:€3.1900
    • 10:€2.8900
    • 25:€2.7900
    • 50:€2.6900
    • 100:€2.5900
    • 500:€2.4900
    • 1000:€2.2900
    STGWT60H65DFB
    DISTI # 40X8769
    STMicroelectronicsPTD HIGH VOLTAGE0
    • 25:$2.6600
    • 10:$2.7600
    • 5:$2.9000
    • 1:$3.2000
    STGWT60H65DFB
    DISTI # 511-STGWT60H65DFB
    STMicroelectronicsIGBT Transistors 650V 60A HSpd trench gate field-stop IGBT
    RoHS: Compliant
    3044
    • 1:$5.2900
    • 10:$4.5000
    • 100:$3.9000
    • 250:$3.7000
    • 500:$3.3200
    • 1000:$2.8000
    • 2500:$2.6600
    STGWT60H65DFB
    DISTI # 8294666P
    STMicroelectronicsIGBT TRENCH HB SERIES 650V 60A TO-3P, TU289
    • 20:£3.1900
    • 10:£3.2500
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    OMO.#: OMO-EKMZ451VSN121MP25S

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    OMO.#: OMO-CFM-6015V-154-362

    DC Fans 12Vdc 2.22W 30.4CFM DC Axial 60x60x15mm
    AUIRGSL30B60K

    Mfr.#: AUIRGSL30B60K

    OMO.#: OMO-AUIRGSL30B60K-INFINEON-TECHNOLOGIES

    IGBT Transistors 600V AUTO ULTRAFAST 10-30 KHZ IGBT
    AD633JRZ

    Mfr.#: AD633JRZ

    OMO.#: OMO-AD633JRZ-ANALOG-DEVICES-INC-ADI

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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von STGWT60H65DFB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    5,29 $
    5,29 $
    10
    4,50 $
    45,00 $
    100
    3,90 $
    390,00 $
    250
    3,70 $
    925,00 $
    500
    3,32 $
    1 660,00 $
    1000
    2,80 $
    2 800,00 $
    2500
    2,66 $
    6 650,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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