RGTH60TS65DGC11

RGTH60TS65DGC11
Mfr. #:
RGTH60TS65DGC11
Hersteller:
ROHM Semiconductor
Beschreibung:
IGBT Transistors 650V 30A IGBT Stop Trench
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RGTH60TS65DGC11 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
RGTH60TS65DGC11 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.6 V
Maximale Gate-Emitter-Spannung:
30 V
Kontinuierlicher Kollektorstrom bei 25 C:
58 A
Pd - Verlustleistung:
194 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
RGTH60TS65
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
58 A
Betriebstemperaturbereich:
- 40 C to + 175 C
Marke:
ROHM Halbleiter
Kontinuierlicher Kollektorstrom:
30 A
Gate-Emitter-Leckstrom:
+/- 200 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
450
Unterkategorie:
IGBTs
Teil # Aliase:
RGTH60TS65D
Gewichtseinheit:
0.070548 oz
Tags
RGTH60TS, RGTH6, RGTH, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 58A 194000mW 3-Pin(3+Tab) TO-247N Bulk
***nell
IGBT, SINGLE, 650V, 58A, TO-247N-3
***ark
Igbt, Single, 650V, 58A, To-247N-3; Dc Collector Current:58A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:194W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247N; No. Of Pins:3Pins; Rohs Compliant: Yes
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
Teil # Mfg. Beschreibung Aktie Preis
RGTH60TS65DG-C11
DISTI # C1S625901599659
ROHM SemiconductorIGBT Chip60
  • 50:$9.4000
  • 25:$10.5000
  • 10:$11.0000
  • 5:$11.5000
RGTH60TS65DGC11
DISTI # RGTH60TS65DGC11-ND
ROHM SemiconductorIGBT 650V 58A 194W TO-247N
RoHS: Compliant
Min Qty: 1
Container: Tube
64In Stock
  • 2500:$1.5750
  • 1000:$1.6538
  • 500:$1.9609
  • 250:$2.1853
  • 100:$2.4216
  • 25:$2.6580
  • 10:$2.9530
  • 1:$3.3100
RGTH60TS65DGC11
DISTI # RGTH60TS65DGC11
ROHM SemiconductorTrans IGBT Chip N-CH 650V 58A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGTH60TS65DGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 450:$1.6900
  • 900:$1.5900
  • 1800:$1.4900
  • 2700:$1.3900
  • 4500:$1.3900
RGTH60TS65DGC11
DISTI # 76Y4977
ROHM SemiconductorIGBT, SINGLE, 650V, 58A, TO-247N-3,DC Collector Current:58A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:194W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247N,No. of Pins:3Pins,RoHS Compliant: Yes33
  • 1:$2.9800
  • 10:$2.5400
  • 25:$2.4300
  • 50:$2.3100
  • 100:$2.2000
  • 250:$2.0900
  • 500:$1.8700
RGTH60TS65DGC11
DISTI # 755-RGTH60TS65DGC11
ROHM SemiconductorIGBT Transistors 650V 30A IGBT Stop Trench
RoHS: Compliant
265
  • 1:$2.9800
  • 10:$2.5400
  • 100:$2.2000
  • 250:$2.0900
  • 500:$1.8700
  • 1000:$1.5800
  • 2500:$1.5000
  • 5000:$1.4400
RGTH60TS65DGC11
DISTI # 1501458
ROHM SemiconductorIGBT N-CHANNEL 58A 650V TRENCH TO-247, PK20
  • 5:£2.3100
  • 25:£2.0320
  • 100:£1.7780
  • 250:£1.6640
  • 500:£1.5700
RGTH60TS65DGC11ROHM SemiconductorIGBT Transistors 650V 30A IGBT Stop Trench
RoHS: Compliant
Americas -
    RGTH60TS65DGC11
    DISTI # 2519796
    ROHM SemiconductorIGBT, SINGLE, 650V, 58A, TO-247N-3
    RoHS: Compliant
    33
    • 1:£2.6400
    • 10:£1.8000
    • 100:£1.5600
    • 250:£1.4800
    • 500:£1.3300
    RGTH60TS65DGC11ROHM SemiconductorRoHS(ship within 1day)30
    • 1:$3.7100
    • 10:$3.0500
    • 50:$2.4500
    • 100:$2.0900
    • 500:$1.9900
    • 1000:$1.9500
    RGTH60TS65DGC11
    DISTI # 2519796
    ROHM SemiconductorIGBT, SINGLE, 650V, 58A, TO-247N-3
    RoHS: Compliant
    33
    • 1:$4.7200
    • 10:$4.0300
    • 100:$3.4900
    • 250:$3.3800
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    Mfr.#: SM8S17AHE3_A/I

    OMO.#: OMO-SM8S17AHE3-A-I

    TVS Diodes / ESD Suppressors 8W,17V 5%,SMD PAR AEC-Q101 Qualified
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    Mfr.#: UC3854DWTR

    OMO.#: OMO-UC3854DWTR

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    Rectifiers
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    OMO.#: OMO-OPA548T-TEXAS-INSTRUMENTS

    Operational Amplifiers - Op Amps Hi-Vltg Hi-Current Exc Output Swing
    SM8S17AHE3_A/I

    Mfr.#: SM8S17AHE3_A/I

    OMO.#: OMO-SM8S17AHE3-A-I-VISHAY

    TVS DIODE 17V 27.6V DO218AB
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    Mfr.#: 76342-322LF

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    Verfügbarkeit
    Aktie:
    230
    Auf Bestellung:
    2213
    Menge eingeben:
    Der aktuelle Preis von RGTH60TS65DGC11 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,98 $
    2,98 $
    10
    2,54 $
    25,40 $
    100
    2,20 $
    220,00 $
    250
    2,09 $
    522,50 $
    500
    1,87 $
    935,00 $
    1000
    1,58 $
    1 580,00 $
    2500
    1,50 $
    3 750,00 $
    5000
    1,44 $
    7 200,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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