RGTH60TS

RGTH60TS65DGC11 vs RGTH60TS65 vs RGTH60TS65DG-C11

 
PartNumberRGTH60TS65DGC11RGTH60TS65RGTH60TS65DG-C11
DescriptionIGBT Transistors 650V 30A IGBT Stop TrenchIGBT Chip
ManufacturerROHM Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Collector Emitter Voltage VCEO Max650 V--
Collector Emitter Saturation Voltage1.6 V--
Maximum Gate Emitter Voltage30 V--
Continuous Collector Current at 25 C58 A--
Pd Power Dissipation194 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesRGTH60TS65--
PackagingTube--
Continuous Collector Current Ic Max58 A--
Operating Temperature Range- 40 C to + 175 C--
BrandROHM Semiconductor--
Continuous Collector Current30 A--
Gate Emitter Leakage Current+/- 200 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity450--
SubcategoryIGBTs--
Part # AliasesRGTH60TS65D--
Unit Weight0.070548 oz--
Hersteller Teil # Beschreibung RFQ
RGTH60TS65GC11 IGBT Transistors 650V 30A IGBT Stop Trench
RGTH60TS65DGC11 IGBT Transistors 650V 30A IGBT Stop Trench
RGTH60TS65DGC11 IGBT Transistors 650V 30A Field Stop Trench IGBT
RGTH60TS65GC11 IGBT Transistors 650V 30A Field Stop Trench IGBT
RGTH60TS65 Neu und Original
RGTH60TS65DG-C11 IGBT Chip
RGTH60TS65G-C11 Unclassified
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