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STB13NM50N-1

STB13NM50N-1
Mfr. #:
STB13NM50N-1
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N Ch 600V 6A Hyper fast IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STB13NM50N-1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STB13NM50N-1 Mehr Informationen STB13NM50N-1 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-262-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
500 V
Id - Kontinuierlicher Drainstrom:
12 A
Rds On - Drain-Source-Widerstand:
320 mOhms
Vgs - Gate-Source-Spannung:
25 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
100 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Höhe:
8.95 mm
Länge:
10 mm
Serie:
STB13N
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
STMicroelectronics
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
40 ns
Typische Einschaltverzögerungszeit:
30 ns
Gewichtseinheit:
0.050717 oz
Tags
STB13NM, STB13N, STB13, STB1, STB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 500V - 0.250Y - 12A - TO-220/FP - TO-247-I2/D2PAKN-channel 500V - 0.250Ohm - 12A - TO-220/FP - TO-247-I2/D2PAK
***ser
IGBTs Insulated Gate Bipolar Transistor N Ch 600V 6A Hyper fast IGBT
***ponent Stockers
12 A 500 V 0.32 ohm N-CHANNEL Si POWER MOSFET TO-262AA
***r Electronics
Power Field-Effect Transistor, 12A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Teil # Mfg. Beschreibung Aktie Preis
STB13NM50N-1
DISTI # STB13NM50N-1-ND		STMicroelectronicsMOSFET N-CH 500V 12A I2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    Bild Teil # Beschreibung
    STB13NK60ZT4

    Mfr.#: STB13NK60ZT4

    OMO.#: OMO-STB13NK60ZT4

    		 MOSFET N-Ch 600 Volt 13 Amp Zener SuperMESH
    STB13N60M2

    Mfr.#: STB13N60M2

    OMO.#: OMO-STB13N60M2

    		 MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2
    STB13NM60N

    Mfr.#: STB13NM60N

    OMO.#: OMO-STB13NM60N

    		 MOSFET POWER MOSFET N-CH
    STB13NM50N-1

    Mfr.#: STB13NM50N-1

    OMO.#: OMO-STB13NM50N-1

    		 MOSFET N Ch 600V 6A Hyper fast IGBT
    STB13NK60ZT4

    Mfr.#: STB13NK60ZT4

    OMO.#: OMO-STB13NK60ZT4-STMICROELECTRONICS

    		 MOSFET N-CH 600V 13A D2PAK
    STB13N80K5-CUT TAPE

    Mfr.#: STB13N80K5-CUT TAPE

    OMO.#: OMO-STB13N80K5-CUT-TAPE-1190

    		 Neu und Original
    STB13NM50N-1

    Mfr.#: STB13NM50N-1

    OMO.#: OMO-STB13NM50N-1-STMICROELECTRONICS

    		 MOSFET N-CH 500V 12A I2PAK
    STB13N80K5

    Mfr.#: STB13N80K5

    OMO.#: OMO-STB13N80K5-STMICROELECTRONICS

    		 MOSFET N-CH 800V 12A D2PAK
    STB13NK60Z

    Mfr.#: STB13NK60Z

    OMO.#: OMO-STB13NK60Z-1190

    		 Neu und Original
    STB13NK60Z-1

    Mfr.#: STB13NK60Z-1

    OMO.#: OMO-STB13NK60Z-1-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1000
    Menge eingeben:
    Der aktuelle Preis von STB13NM50N-1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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