 |  |  | |
| PartNumber | STB13007DT4 | STB130N6F7 | STB13005-1 |
| Description | Bipolar Transistors - BJT NPN power transistor | MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in D2PAK package | Bipolar Transistors - BJT H/V FST SWCH PW TRNS NPN |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | Bipolar Transistors - BJT | MOSFET | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
| Package / Case | D2PAK-3 | TO-263-3 | TO-262-3 |
| Transistor Polarity | NPN | N-Channel | NPN |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 400 V | - | 400 V |
| Collector Base Voltage VCBO | 700 V | - | - |
| Emitter Base Voltage VEBO | 9 V | - | 9 V |
| Maximum DC Collector Current | 16 A | - | 4 A |
| Minimum Operating Temperature | - 65 C | - 55 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
| Series | STB13007DT4 | STB130N6F7 | STB13005 |
| Height | 4.6 mm | - | 9.35 mm |
| Length | 10.4 mm | - | 10.4 mm |
| Packaging | Reel | Reel | Tube |
| Width | 9.35 mm | - | 4.6 mm |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Continuous Collector Current | 8 A | - | 4 A |
| DC Collector/Base Gain hfe Min | 8 | - | 8 at 2 A, 5 V |
| Pd Power Dissipation | 80 W | 160 W | 75 W |
| Product Type | BJTs - Bipolar Transistors | MOSFET | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1000 | 1000 | 50 |
| Subcategory | Transistors | MOSFETs | Transistors |
| Unit Weight | 0.070548 oz | 0.139332 oz | 0.073511 oz |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Id Continuous Drain Current | - | 80 A | - |
| Rds On Drain Source Resistance | - | 5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 42 nC | - |
| Channel Mode | - | Enhancement | - |
| Tradename | - | STripFET | - |
| Transistor Type | - | 1 N-Channel | - |
| Fall Time | - | 24 ns | - |
| Rise Time | - | 44 ns | - |
| Typical Turn Off Delay Time | - | 62 ns | - |
| Typical Turn On Delay Time | - | 24 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
STMicroelectronics |
STB13007DT4 | Bipolar Transistors - BJT NPN power transistor | |
| STB13NK60ZT4 | MOSFET N-Ch 600 Volt 13 Amp Zener SuperMESH | ||
| STB130N6F7 | MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in D2PAK package | ||
| STB13N80K5 | MOSFET N-CH 800V 0.37Ohm 12A MDmesh K5 | ||
| STB13N60M2 | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 | ||
| STB13NM60N | MOSFET POWER MOSFET N-CH | ||
| STB13005-1 | Bipolar Transistors - BJT H/V FST SWCH PW TRNS NPN | ||
| STB13NM50N-1 | MOSFET N Ch 600V 6A Hyper fast IGBT | ||
| STB13007DT4 | Bipolar Transistors - BJT NPN power transisto | ||
| STB13NM60N | MOSFET N-CH 600V 11A D2PAK | ||
| STB13NK60ZT4 | MOSFET N-CH 600V 13A D2PAK | ||
| STB13NM50N | MOSFET N-CH 500V 12A D2PAK | ||
| STB13NM50N-1 | MOSFET N-CH 500V 12A I2PAK | ||
| STB13005-1 | TRANS NPN 400V 4A I2PAK | ||
| STB130N6F7 | MOSFET N-CH 60V 80A F7 D2PAK | ||
| STB130NS04ZBT4 | MOSFET N-CH 33V 80A D2PAK | ||
| STB13N60M2 | MOSFET N-CH 600V 11A D2PAK | ||
| STB13N80K5 | MOSFET N-CH 800V 12A D2PAK | ||
| STB130N6F7-CUT TAPE | Neu und Original | ||
| STB13N80K5-CUT TAPE | Neu und Original | ||
| STB13NK60ZT4-CUT TAPE | Neu und Original | ||
| STB13005 | Neu und Original | ||
| STB13NK60Z | Neu und Original | ||
| STB13NK60Z-1 | Neu und Original |